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Analysis of MODFET microwave characteristics
IEEE Transactions on Electron Devices, 1987A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which automatically accounts for the propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression for the four intrinsic Y parameters.
P. Roblin +3 more
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Effect of noise on the performance of MODFET
Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010), 2010In this paper, an analysis on the effect of noise on the performance of the MODFET was carried out. Here the MODFET model considered is of 0.25 × 200 um2 technology. The equivalent noise model is used and the transconductance with respect to frequency is analyzed and also the variation of the drain current with frequency is also analyzed under the ...
V. J. K. Kishor Sonti, V. Kannan
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Dramatic reduction of sidegating in MODFETs
IEEE Transactions on Electron Devices, 1988The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied.
B.J.F. Lin, D.E. Mars, T.S. Low
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Backgating characteristics of MODFET structures
IEEE Electron Device Letters, 1985Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET's fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage ...
A. Ezis, D.W. Langer
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Nonstationary Transport in MODFETs and Heterojunction Devices
Topical Meeting on Picosecond Electronics and Optoelectronics, 1987New horizons have opened up in semiconductor research with the possibility of "band gap engineering" and the combination of signal transport by photons as well as electrons in new forms of ultra thin III-V compound layers.
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MODFET versus MESFET: the capacitance argument
IEEE Transactions on Electron Devices, 1994In this paper a detailed charge control analysis is presented for a MESFET and a MODFET to show how the various capacitances associated with the region under the gate contact influence device performance. Where necessary, an exact description of electron confinement is included in the solution scheme by solving the effective mass Schrodinger equation ...
C.G. Morton, J. Wood
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IEEE Circuits and Devices Magazine, 1991
The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
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Terahertz photomixing in strained silicon MODFET
35th International Conference on Infrared, Millimeter, and Terahertz Waves, 2010Strained-Si modulation doped • eld effect transistors have been studied as a photomixer within terahertz range. It was subjected to two CW lasers where Δf=|f1-f2|=4 THz. A clear signal was observed with maximum located at around Vg=−0.15V and interpreted as due to the oscillation of the plasma waves under the gate bias.
Y. M. Meziani +5 more
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Picosecond MODFET IC pulse sharpener
IEEE 1993 Microwave and Millimeter-Wave Monolithic Circuits Symposium Digest of Papers, 2002A monolithic synthetic transmission line pulse sharpener using a high power 0.25- mu m InGaAs-GaAs MODFET IC process is discussed. It current-sharpens a DC-to-5-GHz input to a pulse of at least 5-ps, 2-V output transition. This first implementation of a pulse-sharpening circuit in a MODFET IC process demonstrates the broadband capabilities of this ...
M.S. Shakouri +5 more
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P-channel MODFET as an optoelectronic detector
SPIE Proceedings, 2002Optical response of both the gate current and the drain current in p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic MODFET is reported and analytic models are presented. Based on quantum nature of the two-dimensional carrier statistics in the channel and a new model for the gate current, the overall current variation under optical ...
Hwe-Jong Kim +5 more
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