Results 101 to 110 of about 451 (136)

Anomalies in MODFET's with a low-temperature buffer

IEEE Transactions on Electron Devices, 1990
GaAs buffer layers grown by molecular-beam epitaxy (MBE) at low temperatures (200-300 degrees C) have been successfully used to reduce sidegating in both MESFETs and MODFETs. There are, however, high concentrations of defects in the low-temperature (LT) buffers that adversely affect the high-frequency performance of precision analog and certain digital
B.J.-F. Lin, C.P. Kocot, D.E. Mars, R. Jaeger   +3 more
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Noise properties of AlGaAs/GaAs MODFET's

IEEE Transactions on Electron Devices, 1993
An analytically tractable model is presented for the calculation of noise performance of a modulation-doped field-effect transistor (MODFET). The charge control is based on the self-consistent solution of Schrodinger and Poisson's equation. An improved velocity-field characteristic is used in the calculation. The fit provided by the developed theory to
A.F.M. Anwar, K.-W. Liu
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Low frequency noise sources in InAlAs/InGaAs MODFET's

Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1996
In this work, we present a study of various low-frequency noise (LFN) sources in InAlAs/InGaAs MODFET structures. The contributions of the main noise sources-drain and source contact resistance fluctuations, channel charge fluctuations and gate current noise-are separated by measuring the drain current power noise spectrum on uncompleted, gate free ...
Viktorovitch, P., Rojo-Romeo, P., Leclercq, J.L., Letartre, X., Tardy, J., Oustric, M., Gendry, Michel   +6 more
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Charge collection in GaAs MESFETs and MODFETs

IEEE Transactions on Nuclear Science, 1991
A comparison of the amount of charge collected at the drains of GaAs MESFETs irradiated with pulsed laser light and ions and having different gate lengths shows orders of magnitude more charge collected for 0.1 mu m MESFETs than for 1.2 mu m MESFETs manufactured using different processes.
S. Buchner, K. Kang, D.W. Tu, A.R. Knudson, A.B. Campbell, D. McMorrow, V. Srinivas, Y.J. Chen   +7 more
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High-Performance Quarter-Micron-Gate MODFETs

Topical Meeting on Picosecond Electronics and Optoelectronics, 1987
Modulation-doped FETs provide a significant performance advantage over conventional GaAs FETs due to the superior transport properties of the two-dimensional electrons which form the conductive channel in these devices. Table 1 compares the material and device characteristics of different FET devices. At TRW quarter-micron-gate AlGaAs/GaAs MODFETs have
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Modeling of MODFETs

Microelectronics Journal, 1989
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GaAs/AlGaAs MODFET's grown on

IEEE Electron Device Letters, 1984
R. Fischer, J. Klem, T. Henderson, W.T. Masselink, W. Kopp, H. Morkoc   +5 more
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MODFETs

2001
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The submicron inverted MODFET I-GaAs/N+-AlGaAs: a 2D Monte-Carlo study

Solid-State Electronics, 1988
R Fauquembergue
exaly  

MODFETs: OPERATION, STATUS AND APPLICATIONS

1996
S. NOOR MOHAMMAD, HADIS MORKOÇ
openaire   +1 more source