Results 11 to 20 of about 85 (80)
Advancement and Challenges of Biosensing Using Field Effect Transistors. [PDF]
Biosensors (Basel), 2022 Thriveni G, Ghosh K.
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Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator. [PDF]
Materials (Basel), 2021 Chen YM, Lin HC, Lee KW, Wang YH.
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Recent Progress in Multiphase Thermoelectric Materials. [PDF]
Materials (Basel), 2021 Fortulan R, Aminorroaya Yamini S.
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A modulation-doped heterostructure-based terahertz photoconductive antenna emitter with recessed metal contacts. [PDF]
Sci Rep, 2020 Afalla J +15 more
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An improved MODFET microwave analysis
IEEE Transactions on Electron Devices, 1988A recently proposed MODFET analysis is improved by presenting more accurate expressions for the MODFET admittance parameters. It is shown that the resulting parameters can improve the frequency range of validity by a factor of two over those recently presented, and that the latter represent a low-frequency approximation to the parameters given here. An
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High performance 0.1 μm gate-length p-type SiGe MODFET's and MOS-MODFET's
IEEE Transactions on Electron Devices, 2000High performance p-type modulation-doped field-effect transistors (MODFET's) and metal-oxide-semiconductor MODFET (MOS-MODFET) with 0.1 /spl mu/m gate-length have been fabricated on a high hole mobility SiGe-Si heterojunction grown by ultrahigh vacuum chemical vapor deposition.
J O Chu, T P Ma
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Effect of noise on the performance of MODFET
Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010), 2010In this paper, an analysis on the effect of noise on the performance of the MODFET was carried out. Here the MODFET model considered is of 0.25 × 200 um2 technology. The equivalent noise model is used and the transconductance with respect to frequency is analyzed and also the variation of the drain current with frequency is also analyzed under the ...
V J K Kishor Sonti
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Instabilities in MODFET's and MODFET circuits
IEEE Transactions on Electron Devices, 1984We report some instability phenomena of modulation-doped field effect transistors (MODFET's). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
K.H. Duh +3 more
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