Ultrawideband LNA 1960–2019: Review
IET Circuits, Devices &Systems, Volume 15, Issue 8, Page 697-727, November 2021., 2021 Abstract To the best of the author's knowledge, several studies during 1960–2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio‐Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite ...
Shahab Shahrabadi
wiley +1 more source
MODFET-Technologie-Optimierung für MMICs mit statistischer Mikrowellen-Charakterisierung [PDF]
, 2022 S.107-109 : Abb.,Tab.,Lit.77 GHz LNAs and TWAs operating from DC to 80 GHz were fabricated successfully (1),(2) using a highly reproducible MODFET technology with mushroom gates of 0.16 mym length. Technology development and optimization were carried out
Braunstein, J. +5 more
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STABILITY OF SI-DOPED AlGaAs/GaAs MODFET STRUCTURES DURING CONVENTIONAL FURNACE AND RAPID OPTICAL ANNEALING. [PDF]
, 1985 The use of an AlGaAs/n-GaAs superlattice in place of the n-AlGaAs layer in MODFET devices reduces the light and temperature sensitivity of the threshold voltage.
P. JOSLYN +3 more
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OMVPE-gezüchtete AlxGa1-x0.5In0.5P/InGaAs MODFET-Strukturen - Züchtungstechnik und Hallbeweglichkeit [PDF]
, 2022 S.817-823 : Abb.,Tab.,Lit.Modulation doped (AlsubxGasub1minussubx)sub0.5 Insub0.5P/InsubyGasub1minussubyAS/GaAs single quantum well structures have been grown by low pressure metal organic vapour phase epitaxy and characterized by Hall measurements and ...
Winkler, K. +4 more
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Analysis of propagation on MODFET-type coplanar waveguide [PDF]
, 1998 An analysis of propagation on Coplanar Waveguide loaded with extrinsic semiconductor material -in MODFET-like structure - is proposed. The model takes into account both semiconductor and conductor losses, as well as the finite conductor ...
Rozzi, L. +3 more
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A Simple Analytical Model of a GaN MODFET to Study its DC and RF Performance [PDF]
, 2022 This work presents a theoretical study of a GaN MODFET considering accurate velocity field relation of GaN for a wide range of electric field. The analytical expression of different DC parameters such as drain current, mutual conductance and drain ...
Pal, Radha Raman +4 more
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Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices
Advances in Materials Science and Engineering, Volume 2014, Issue 1, 2014., 2014 Indium antimonide nanoparticles were synthesized at room temperature. X‐ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose
T. D. Subash +4 more
wiley +1 more source
Hochwertige, MOCVD-gewachsene AlGaInP/GaAs-MODFET-Strukturen - Ein Beispiel eines bezüglich der Grenzflächenqualität erfolgreich konzipierten Heteroüberganges [PDF]
, 2022 S.744-746 : Abb.,Tab.,Lit.AlGaInP/GaAs heterostructures have been studied to exploit their potential for MODFET applications. In order to circumvent problems related to the complex nature of real MOCVD-grown arsenide/phosphide interfaces a 1.8 nm thin ...
Winkler, K. +4 more
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Materials for Future Quantum Dot‐Based Memories
Journal of Nanomaterials, Volume 2013, Issue 1, 2013., 2013 The present paper investigates the current status of the storage times in self‐organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross‐sections, are listed.
T. Nowozin +5 more
wiley +1 more source
MODFET-Kleinsignalersatzschaltbild für Millimeterwellen-Schaltungsentwürfe. Extraktion und Verfifikation bis 120 GHz [PDF]
, 2022 S.611-614A new MODFET circuit model required for millimeter-wave MMIC design has been developed, since it was found conventional MODFET circuit topology normally used was not able to accurately simulate measurement data above 75 GHz.
Braunstein, J., Tasker, P.J.
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