Results 11 to 20 of about 97 (89)

RF Performance of Si/SiGe MODFETs: A Simulation Study

VLSI Design, Volume 8, Issue 1-4, Page 325-330, 1998., 1998
The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both devices have equivalent structures corresponding to a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations to estimate the intrinsic noise figures,
S. Roy, A. Asenov, S. Babiker, J. R. Barker, S. P. Beaumont   +4 more
wiley   +1 more source

Inclusion of Quantum Confinement Effects in Self‐Consistent Monte Carlo Device Simulations

VLSI Design, Volume 8, Issue 1-4, Page 21-27, 1998., 1998
The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self‐consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states ...
R. W. Kelsall, A. J. Lidsey
wiley   +1 more source

Recessed gate GaN MODFETs

Solid-State Electronics, 1997
Abstract MODFETs, with and without gate recess, were fabricated on a GaN Al 0.27 Ga 0.73 N heterostructure. The gate recess etch was performed with an ECR etch. The gate recess etch improved the maximum transconductance from 23 to 45 mS/mm, ft from 11.4 to 14 GHz, and fmax from 21.2 to 42.5 GHz.
Jinwook Burm, William J. Schaff, Glenn H. Martin, Lester F. Eastman, Hiroshi Amano, Isamu Akasaki   +5 more
openaire   +1 more source

High Frequency AlGaN/GaN MODFET's [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1997
Short-gate MODFET's of AlGaN/GaN on Sapphire have been fabricated and characterized with gate lengths in the .12 - .25 μm range. Values of ft = 50 GHz and fmax = 100 GHz have been obtained. Analyzing the performance, the average electron transit velocity is shown to be 1.25 × 107 cm/s and in some cases well under that value.
L. Eastman, K. Chu, W. Schaff, M. Murphy, N. G. Weimann, T. Eustis   +5 more
openaire   +1 more source

Monte Carlo Calibrated Drift‐Diffusion Simulation of Short Channel HFETs

VLSI Design, Volume 8, Issue 1-4, Page 319-323, 1998., 1998
In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the
A. Asenov, S. Babiker, S. P. Beaumont, J. R. Barker   +3 more
wiley   +1 more source

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self‐consistent Tight‐binding Calculations

VLSI Design, Volume 8, Issue 1-4, Page 469-473, 1998., 1998
A tight‐binding models which account for band mixing, strain and external applied potentials in a self‐consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation.
Andrea Reale, Aldo Di Carlo, Sara Pescetelli, Marco Paciotti, Paolo Lugli   +4 more
wiley   +1 more source

Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models

VLSI Design, Volume 8, Issue 1-4, Page 495-500, 1998., 1997
Physical simulation of semiconductor devices at high frequencies involves not only semiconductor transport issues but also electromagnetic wave propagation issues. In order to obtain the nonlinear and the large‐signal characteristics of the semiconductor devices, an electromagnetic model should replace the traditional quasi‐static model in the device ...
S. M. Sohel Imtiaz, Samir M. El-Ghazaly, Robert O. Grondin   +2 more
wiley   +1 more source

Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design, Volume 3, Issue 2, Page 211-224, 1995., 1995
According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer′s approach [1, 2], and the Energy Transport (ET) model which ...
Edwin C. Kan, Zhiping Yu, Robert W. Dutton, Datong Chen, Umberto Ravaioli   +4 more
wiley   +1 more source

Electrical Properties of Ge/Ge(x)Si(1-x) thin films on the boundary of semiconductor-dielectric transition

Фізика і хімія твердого тіла
Calculations of the dependencies of carrier concentration and specific electrical conductivity at room temperature for the undoped and doped germanium nanofilms, grown on the Ge(x)Si(1-x) substrate with crystallographic orientation (001), on a film ...
Sergiy Luniov, Pavlo Shygorin, Bohdan Venhryn   +2 more
doaj   +1 more source

A 100-element MODFET grid amplifier [PDF]

IEEE Antennas and Propagation Society International Symposium. 1995 Digest, 2002
A 100-element quasi-optical amplifier is presented. The active devices are custom-fabricated modulation-doped field-effect transistors (MODFETs). Common-mode oscillations were suppressed using resistors in the input gate leads. The grid has 9 dB of gain at 10.1 GHz. The 3-dB bandwidth is 1.2 GHz.
DeLisio, Michael P., Liu, Cheh-Ming, Moussessian, Alina, Rutledge, David B., Rosenberg, James J.   +4 more
openaire   +2 more sources