Results 71 to 80 of about 961 (128)
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Dramatic reduction of sidegating in MODFETs
IEEE Transactions on Electron Devices, 1988The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied.
B.J.F. Lin, D.E. Mars, T.S. Low
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Pulse-doped AlGaAs/InGaAs pseudomorphic MODFETs
IEEE Transactions on Electron Devices, 1988MODFETs have been fabricated using heterojunctions consisting of AlGaAs and pseudomorphic InGaAs, grown on GaAs substrates. The large conduction band discontinuity (about 0.46 eV for 25% In and Al concentration) leads to a 2-D electron density as high as 2.3*10/sup 12/ cm/sup -2/, with electron mobilities of 7000 and 16000 cm/sup 2//V-s at 300 and 77 K,
N. Moll +2 more
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Noise behavior of SiGe n-MODFETS
Materials Science in Semiconductor Processing, 2005This paper presents an investigation of the low-frequency noise properties of SiGe-based on n-MODFETs through the characterization of both the gate current noise and the drain current noise, including their correlation. Measurements vs. bias and gate geometry have shown that this noise is generated through mobility fluctuations or carrier diffusion at ...
A. Rennane +6 more
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Instabilities in MODFET's and MODFET circuits
IEEE Transactions on Electron Devices, 1984We report some instability phenomena of modulation-doped field effect transistors (MODFET's). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
K.H. Duh +3 more
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1984 International Electron Devices Meeting, 1984
We have designed and fabricated a novel variation of the conventional modulation-doped heterostructure FET, based on growth by molecular beam epitaxy. The doping of the AlGaAs is confined to a thin layer, about 100A thick, close to the heterointerface. This increases the forward voltage of the Schottky gate, reduces the dependence of threshold voltage ...
M. Hueschen +3 more
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We have designed and fabricated a novel variation of the conventional modulation-doped heterostructure FET, based on growth by molecular beam epitaxy. The doping of the AlGaAs is confined to a thin layer, about 100A thick, close to the heterointerface. This increases the forward voltage of the Schottky gate, reduces the dependence of threshold voltage ...
M. Hueschen +3 more
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IEEE Transactions on Microwave Theory and Techniques, 1988
Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer +2 more
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Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer +2 more
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GaAs MODFET transconductance stability
IEEE Transactions on Reliability, 1990The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic ...
S.A. Hanka +3 more
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[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-
C.C. Eugster +3 more
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The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-
C.C. Eugster +3 more
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High-transconductance GaN MODFETs
Proceedings of International Electron Devices Meeting, 2002Current-voltage (I-V) characteristics of both normally-on and normally-off AlGaN-GaN MODFETs have been presented. The sheet carrier concentration of GaN used for the fabrication of these devices is significantly high. Both normally-on and normally-off devices exhibit high transconductance g/sub m/.
O. Aktas +8 more
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Solid-State Electronics, 1987
Abstract Modulation-doped AlGaAs/GaAs field-effect transistors (MODFETs) (also called HEMTs, TEGFETs, SDHFETs etc.) are currently the fastest switching FETs and they offer the lowest noise figures at microwave frequencies. In this contribution, first a short overview of the large variety of heterostructure arrangements useful for FET applications is ...
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Abstract Modulation-doped AlGaAs/GaAs field-effect transistors (MODFETs) (also called HEMTs, TEGFETs, SDHFETs etc.) are currently the fastest switching FETs and they offer the lowest noise figures at microwave frequencies. In this contribution, first a short overview of the large variety of heterostructure arrangements useful for FET applications is ...
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