Results 31 to 40 of about 92 (88)

The problem of breakdown in MODFETs

Third International Workshop on Integrated Nonlinear Microwave and Millimeterwave Circuits, 1994
Understanding the breakdown mechanisms in FETs is a key factor in designing high power MMICs. The breakdown can be improved by reducing the electric field at the drain, and the gate leakage current. For MESFETs the drain field can be reduced by increasing the distances between the drain and gate contact.
A. Hulsmann, W. Bronner, K. Kohler, M. Baeumler, J. Braunstein, P.J. Tasker   +5 more
openaire   +1 more source

GaAs MODFET transconductance stability

IEEE Transactions on Reliability, 1990
The thermal stability of GaAs modulation-doped field effect transistors (MODFETs) is evaluated in order to identify failure mechanisms and validate the reliability of these devices. The transistors were exposed to thermal step-stress and characterized at ambient temperatures to indicate device reliability, especially that of the transistor ohmic ...
S.A. Hanka, C.H. Chen, P. Vold, T. Akinwande   +3 more
openaire   +1 more source

Physics of breakdown in InAlAs/InGaAs MODFET's

IEEE Transactions on Electron Devices, 1993
A detailed study of the physics of off-state breakdown in state-of-the-art lattice-matched and pseudomorphic InAlAs/InGaAs MODFETs is presented. It is found that, similarly to heterojunction avalanche photodiodes, breakdown in these devices is a two-step process.
S.R. Bahl, J.A. del Alamo, J. Dickmann, S. Schildberg   +3 more
openaire   +1 more source

High-transconductance GaN MODFETs

Proceedings of International Electron Devices Meeting, 2002
Current-voltage (I-V) characteristics of both normally-on and normally-off AlGaN-GaN MODFETs have been presented. The sheet carrier concentration of GaN used for the fabrication of these devices is significantly high. Both normally-on and normally-off devices exhibit high transconductance g/sub m/.
O. Aktas, W. Kim, Z. Fan, F. Stengel, A. Botchkarev, A. Salvador, B. Sverdlov, S.N. Mohammad, H. Morkoc   +8 more
openaire   +1 more source

Heterostructures in MODFETs

Solid-State Electronics, 1987
Abstract Modulation-doped AlGaAs/GaAs field-effect transistors (MODFETs) (also called HEMTs, TEGFETs, SDHFETs etc.) are currently the fastest switching FETs and they offer the lowest noise figures at microwave frequencies. In this contribution, first a short overview of the large variety of heterostructure arrangements useful for FET applications is ...
openaire   +1 more source

Analysis of MODFET microwave characteristics

IEEE Transactions on Electron Devices, 1987
A new ac MODFET model including distributed effects is presented. We have solved the wave equation of the MODFET, which automatically accounts for the propagation delay, capacitances, and charging resistances. Using a frequency power series proposed by Ziel, we derive an approximate analytic expression for the four intrinsic Y parameters.
P. Roblin, null Sungchoon Kang, A. Ketterson, H. Morkoc   +3 more
openaire   +1 more source

Effect of noise on the performance of MODFET

Recent Advances in Space Technology Services and Climate Change 2010 (RSTS & CC-2010), 2010
In this paper, an analysis on the effect of noise on the performance of the MODFET was carried out. Here the MODFET model considered is of 0.25 × 200 um2 technology. The equivalent noise model is used and the transconductance with respect to frequency is analyzed and also the variation of the drain current with frequency is also analyzed under the ...
V. J. K. Kishor Sonti, V. Kannan
openaire   +1 more source

Comparative study on performance of cubic AlxGa1−xN/GaN nanostructures MODFETs and MOS-MODFETs

Superlattices and Microstructures, 2013
Abstract We report some comparative results on cubic AlxGa1−xN/GaN nanostructures MODFET and MOS-MODFET. The drain current characteristics of cubic AlxGa1−xN/GaN MODFET and MOS-MODFET are simulated by changing the different device parameters such as Al content x and the cubic GaN buffer layer thickness using 2D nextnano3 numerical simulation software.
Driss Bouguenna, A. Boudghene Stambouli, N. Mekkakia Maaza, A. Zado, D.J. As   +4 more
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Interaction of Phonons with the 2-DEG in a MODFET

1993
Using nanosecond pulse techniques, we have studied the direct emission and absorption of phonons by the same two-dimensional electron gas (2DEG) in a GaAs/AlGaAs modulation-doped field effect transistor structure (MODFET) [1]. Pulsed emission of phonons from a heterojunction has been observed by Chin et al [2], and by Hawker et al [3], and absorption ...
Sahraoui-Tahar, M, Wigmore, J.K, Erol, Mustafa, Wilkinson, C.D.W, Davies, J.H, Holland, M, Stanley, C, ARI, Mehmet   +7 more
openaire   +2 more sources

Backgating characteristics of MODFET structures

IEEE Electron Device Letters, 1985
Significant backgating in mesa-isolated AlGaAs/GaAs MODFET structures is reported. Results are presented on the influence of backgate potential on the electrical characteristics of enhancement-mode MODFET's fabricated on MBE grown material. An observed zero threshold voltage for the onset of backgating is attributed to a high level of current leakage ...
A. Ezis, D.W. Langer
openaire   +1 more source