Results 31 to 40 of about 961 (128)

Interface charged impurity scattering in semiconductor MOSFETs and MODFETs: temperature dependent resistivity and 2D "metallic" behavior

, 2000
We present the results on the anomalous 2D transport behavior by employing Drude-Boltzmann transport theory and taking into account the realistic charge impurity scattering effects.
Abrahams, Altshuler, Ando, Belitz, Castellani, Coleridge, Das Sarma, Das Sarma, Dobrosavljević, Dolgopolov, E.H Hwang, Gold, Hanein, Hanein, He, Igor Žutić, Klapwijk, Kravchenko, Lam, Mills, Phillips, Popovic, Pudalov, Pudalov, S.Das Sarma, Si, Simmons, Simonian, Stern, Stern   +29 more
core   +1 more source

Charge trap layer enabled positive tunable V$_{fb}$ in $\beta$-Ga$_{2}$O$_{3}$ gate stacks for enhancement mode transistors

, 2020
$\beta$-Ga$_{2}$O$_{3}$ based enhancement mode transistor designs are critical for the realization of low loss, high efficiency next generation power devices with rudimentary driving circuits.
Biswas, Dipankar, Biswas, Jayeeta, Joishi, Chandan, Lodha, Saurabh, Tiwari, Prabhans   +4 more
core   +1 more source

High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates [PDF]

, 2004
SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time.
Alterovitz, Samuel A., Croke, Edward T., Mueller, Carl H., Ponchak, George E.   +3 more
core   +1 more source

III-V nitrides for electronic and UV applications [PDF]

, 1906
Tremendous progress has been made in recent years in the growth, doping and processing technologies of the wide bandgap semiconductors. The principal driving force behind this activity is the potential use of, for example, the 1114 nitrides in high-power,
Henini, Mohamed
core   +1 more source

Effects of screening on the two-dimensional electron transport properties in modulation doped heterostructures [PDF]

, 1998
Cataloged from PDF version of article.The effects of screening on the polar optical phonon scattering rates and on the transport properties of the two-dimensional electron gas in AlGaAs/GaAs modulation doped heterostructures have been investigated ...
Besikci, C., Sen, O., Tanatar, B.
core   +1 more source

Scaling study of Si/SiGe MODFETs for RF applications [PDF]

, 2002
Based on the successful calibration on a 0.25 /spl mu/m strained Si/SiGe n-type MODFET, this paper presents a gate length scaling study of double-side doped Si/SiGe MODFETs.
Asenov, A., Barker, J.R., Hackbarth, T., Roy, S., Watling, J.R., Wilkins, R.C.W., Yang, L.   +6 more
core  

Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]

, 2001
The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E., Rudge, P.J., Snowden, C.M., Steer, M.B.   +3 more
core   +1 more source

Direct measurement of doping density and barrier lowering effect with bias in quantum wells [PDF]

, 1995
An experimental method for determining the doping density in thin-sheet semiconductor material such as quantum wells (QWs) is demonstrated in GaAs/AlGaAs multiquantum-well infra-red photodetectors.
Dejewski, S., Krabach, T., Shakouri, A., Xu, Y., Yariv, A.   +4 more
core   +1 more source

Microelectromechanical Systems (MEMS) Resistive Heaters as Circuit Protection Devices [PDF]

, 2013
With increased opportunities for the exploitation (i.e., reverse engineering) of vulnerable electronic components and systems, circuit protection has become a critical issue.
Coutu, Ronald A., Jr., Ostrow, Scott A.
core   +1 more source

Modeling random telegraph noise under switched bias conditions using cyclostationary RTS noise [PDF]

, 2003
In this paper, we present measurements and simulation of random telegraph signal (RTS) noise in n-channel MOSFETs under periodic large signal gate-source excitation (switched bias conditions).
Klumperink, Eric A.M., Nauta, Bram, Vandamme, L.K.J., Wel, Arnoud P. van der   +3 more
core   +3 more sources