Results 21 to 30 of about 93 (89)

Progress in Gallium Oxide Field-Effect Transistors for High-Power and RF Applications. [PDF]

Materials (Basel), 2023
Maimon O, Li Q.
europepmc   +1 more source

The Studies on Gallium Nitride-Based Materials: A Bibliometric Analysis. [PDF]

Materials (Basel), 2023
Lam WH, Lam WS, Lee PF.
europepmc   +1 more source

Gallium Oxide for Gas Sensor Applications: A Comprehensive Review. [PDF]

Materials (Basel), 2022
Zhu J, Xu Z, Ha S, Li D, Zhang K, Zhang H, Feng J.   +6 more
europepmc   +1 more source

Si:SiGe MODFET current mirror

Electronics Letters, 1998
K. Fobelets, W. Jeamsaksiri, J. Hampson, C. Toumazou, T. Thornton   +4 more
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HCl-gas etching behavior of (001) β-Ga₂O₃ under oxygen supply. [PDF]

Sci Technol Adv Mater
Oshima Y, Oshima T.
europepmc   +1 more source

Impact of device resistances in the performance of graphene-based terahertz photodetectors. [PDF]

Front Optoelectron
Castelló O, Baptista SML, Watanabe K, Taniguchi T, Diez E, Velázquez-Pérez JE, Meziani YM, Caridad JM, Delgado-Notario JA.   +8 more
europepmc   +1 more source

Proton irradiation Of Ga₂O₃ Schottky diodes and NiO/Ga₂O₃ heterojunctions. [PDF]

Sci Rep
Polyakov AY, Saranin DS, Shchemerov IV, Vasilev AA, Romanov AA, Kochkova AI, Gostischev P, Chernykh AV, Alexanyan LA, Matros NR, Lagov PB, Doroshkevich AS, Isayev RS, Pavlov YS, Kislyuk AM, Yakimov EB, Pearton SJ.   +16 more
europepmc   +1 more source

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Dramatic reduction of sidegating in MODFETs

IEEE Transactions on Electron Devices, 1988
The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied.
B.J.F. Lin, D.E. Mars, T.S. Low
exaly   +2 more sources

MODFETs soar to 400 GHz

IEEE Circuits and Devices: the Magazine of Electronic and Photonic Systems, 1991
The operation of MODFETs (modulation-doped FETs) is explained. These devices now have switching delays under 5 ps, current-gain cutoff frequencies of about 250 GHz, and maximum oscillation frequencies in excess of 400 GHz. They also perform frequency division up to 26 GHz.
exaly   +2 more sources

Instabilities in MODFET's and MODFET circuits

IEEE Transactions on Electron Devices, 1984
We report some instability phenomena of modulation-doped field effect transistors (MODFET's). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
K.H. Duh, X.C. Zhu, A. van der Ziel, H. Morkoc   +3 more
openaire   +1 more source