Results 21 to 30 of about 961 (128)

High Frequency AlGaN/GaN MODFET's [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1997
Short-gate MODFET's of AlGaN/GaN on Sapphire have been fabricated and characterized with gate lengths in the .12 - .25 μm range. Values of ft = 50 GHz and fmax = 100 GHz have been obtained. Analyzing the performance, the average electron transit velocity is shown to be 1.25 × 107 cm/s and in some cases well under that value.
L. Eastman, K. Chu, W. Schaff, M. Murphy, N. G. Weimann, T. Eustis   +5 more
openaire   +1 more source

Inclusion of Quantum Confinement Effects in Self‐Consistent Monte Carlo Device Simulations

VLSI Design, Volume 8, Issue 1-4, Page 21-27, 1998., 1998
The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self‐consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states ...
R. W. Kelsall, A. J. Lidsey
wiley   +1 more source

Monte Carlo Calibrated Drift‐Diffusion Simulation of Short Channel HFETs

VLSI Design, Volume 8, Issue 1-4, Page 319-323, 1998., 1998
In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the
A. Asenov, S. Babiker, S. P. Beaumont, J. R. Barker   +3 more
wiley   +1 more source

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self‐consistent Tight‐binding Calculations

VLSI Design, Volume 8, Issue 1-4, Page 469-473, 1998., 1998
A tight‐binding models which account for band mixing, strain and external applied potentials in a self‐consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation.
Andrea Reale, Aldo Di Carlo, Sara Pescetelli, Marco Paciotti, Paolo Lugli   +4 more
wiley   +1 more source

Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models

VLSI Design, Volume 8, Issue 1-4, Page 495-500, 1998., 1997
Physical simulation of semiconductor devices at high frequencies involves not only semiconductor transport issues but also electromagnetic wave propagation issues. In order to obtain the nonlinear and the large‐signal characteristics of the semiconductor devices, an electromagnetic model should replace the traditional quasi‐static model in the device ...
S. M. Sohel Imtiaz, Samir M. El-Ghazaly, Robert O. Grondin   +2 more
wiley   +1 more source

Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design, Volume 3, Issue 2, Page 211-224, 1995., 1995
According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer′s approach [1, 2], and the Energy Transport (ET) model which ...
Edwin C. Kan, Zhiping Yu, Robert W. Dutton, Datong Chen, Umberto Ravaioli   +4 more
wiley   +1 more source

Transistores de alta mobilidade eletrônica (HEMTs): Princípios de operação e características eletrônicas

Revista Brasileira de Ensino de Física
O ensino de física dos dispositivos semicondutores é absolutamente fundamental para o desenvolvimento da microeletrônica. Contudo, cursos introdutórios nesta área muitas vezes se limitam a apresentar modelos analíticos excessivamente simplificados, que ...
Murilo A. Romero, Regiane Ragi, José Eduardo Manzoli   +2 more
doaj   +1 more source

RF performance of strained Si MODFETs and MOSFETs on "virtual" SiGe substrates: A Monte Carlo study [PDF]

, 1997
No abstract ...
Asenov, A., Babiker, S., Barker, J.R., Beaumont, S.P., Roy, S.   +4 more
core  

Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures [PDF]

, 1996
The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by ...
Davidow, J., Dimoulas, A., Georgakilas, A., Giapis, K. P., Halkias, G., Kornelios, N.   +5 more
core   +1 more source

Physics of InAIAs/InGaAs Heterostructure Field-Effect Transistors [PDF]

Contains an introduction, reports on two research projects and a list of publications.Joint Services Electronics Program Contract DAAL03-92-C-0001Joint Services Electronics Program Grant DAAH04-95-1-0038Raytheon Corporation Contract 90-58203Texas ...
Adams, Tracy E., del Alamo, Jesús A., Reiner, James W., Somerville, Mark H., Weinberg, Michael J.   +4 more
core   +9 more sources