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Advantages of Semiconductor Device Simulator Combining Electromagnetic and Electron Transport Models

VLSI Design, Volume 8, Issue 1-4, Page 495-500, 1998., 1997
Physical simulation of semiconductor devices at high frequencies involves not only semiconductor transport issues but also electromagnetic wave propagation issues. In order to obtain the nonlinear and the large‐signal characteristics of the semiconductor devices, an electromagnetic model should replace the traditional quasi‐static model in the device ...
S. M. Sohel Imtiaz, Samir M. El-Ghazaly, Robert O. Grondin   +2 more
wiley   +1 more source

Formulation of Macroscopic Transport Models for Numerical Simulation of Semiconductor Devices

VLSI Design, Volume 3, Issue 2, Page 211-224, 1995., 1995
According to different assumptions in deriving carrier and energy flux equations, macroscopic semiconductor transport models from the moments of the Boltzmann transport equation (BTE) can be divided into two main categories: the hydrodynamic (HD) model which basically follows Bløtekjer′s approach [1, 2], and the Energy Transport (ET) model which ...
Edwin C. Kan, Zhiping Yu, Robert W. Dutton, Datong Chen, Umberto Ravaioli   +4 more
wiley   +1 more source

HCl-gas etching behavior of (001) β-Ga₂O₃ under oxygen supply. [PDF]

Sci Technol Adv Mater
Oshima Y, Oshima T.
europepmc   +1 more source

Proton irradiation Of Ga₂O₃ Schottky diodes and NiO/Ga₂O₃ heterojunctions. [PDF]

Sci Rep
Polyakov AY, Saranin DS, Shchemerov IV, Vasilev AA, Romanov AA, Kochkova AI, Gostischev P, Chernykh AV, Alexanyan LA, Matros NR, Lagov PB, Doroshkevich AS, Isayev RS, Pavlov YS, Kislyuk AM, Yakimov EB, Pearton SJ.   +16 more
europepmc   +1 more source

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Nonlinear parasitics in MODFETs and MODFET I-V characteristics

IEEE Transactions on Electron Devices, 1988
A large-signal analysis of the source and drain resistance of MODFETs is reported. Velocity saturation in the two-dimensional electron gas (2DEG) and hypothetical rectifying effects in the n/sup +/-AlGaAs-i-GaAs interface are accounted for. Rectifying effects are found to be either absent or negligible.
P Roblin, S B Bibyk
exaly   +2 more sources

Dramatic reduction of sidegating in MODFETs

IEEE Transactions on Electron Devices, 1988
The results of systematic materials and process modifications to implant-isolated MODFETs, aimed at the elimination of sidegating in MODFET ICs, are reported. Two different methods of ion-implant isolation and four different kinds of MBE buffer layer were studied.
B.J.F. Lin, D.E. Mars, T.S. Low
exaly   +2 more sources

Instabilities in MODFET's and MODFET circuits

IEEE Transactions on Electron Devices, 1984
We report some instability phenomena of modulation-doped field effect transistors (MODFET's). It can be caused by traps or by high-frequency oscillations. By the improvement of technology to reduce the trap density and careful circuit layout we can reduce the noise level in the high drain voltage region.
K.H. Duh, X.C. Zhu, A. van der Ziel, H. Morkoc   +3 more
openaire   +1 more source

Modeling of MODFETs

IEEE Transactions on Microwave Theory and Techniques, 1988
Accurate modeling of MODFETs and of certain novel structures recently proposed requires that a number of physical phenomena occurring in these devices be considered. Among these, some electron dynamic properties of the two-dimensional gas, the influence of deep levels of the doped AlGaAs layers, and the influence of the source parasitic access ...
G. Salmer, J. Zimmermann, R. Fauquembergue   +2 more
openaire   +1 more source

Pulse doped MODFET's

1984 International Electron Devices Meeting, 1984
We have designed and fabricated a novel variation of the conventional modulation-doped heterostructure FET, based on growth by molecular beam epitaxy. The doping of the AlGaAs is confined to a thin layer, about 100A thick, close to the heterointerface. This increases the forward voltage of the Schottky gate, reduces the dependence of threshold voltage ...
M. Hueschen, N. Moll, E. Gowen, J. Miller   +3 more
openaire   +1 more source

An InAlAs/InAs MODFET

[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials, 1991
The fabrication and testing of an InAs modulation-doped field-effect transistor (MODFET) using an epitaxial heterostructure based entirely on arsenides are discussed. The heterostructure was grown by molecular beam epitaxy (MBE) on InP and contains a 30 A InAs channel. An L/sub G/=2 mu m device displays well behaved characteristics, showing sharp pinch-
C.C. Eugster, T.P.E. Broekaert, J.A. del Alamo, C.G. Fonstad   +3 more
openaire   +1 more source