Results 11 to 20 of about 92 (88)

Ultrawideband LNA 1960–2019: Review

IET Circuits, Devices &Systems, Volume 15, Issue 8, Page 697-727, November 2021., 2021
Abstract To the best of the author's knowledge, several studies during 1960–2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW‐less Radio‐Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite ...
Shahab Shahrabadi
wiley   +1 more source

Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

Advances in Materials Science and Engineering, Volume 2014, Issue 1, 2014., 2014
Indium antimonide nanoparticles were synthesized at room temperature. X‐ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose
T. D. Subash, T. Gnanasekaran, C. Divya, J. Jagannathan, George Z. Kyzas   +4 more
wiley   +1 more source

Microwave Analysis for Two‐Dimensional C‐V and Noise Model of AlGaN/GaN MODFET

Advances in Materials Science and Engineering, Volume 2014, Issue 1, 2014., 2014
A new two‐dimensional analytical model for the capacitance‐voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two‐dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of various capacitances to the performance of the device
Ramnish Kumar, Sandeep K. Arya, Anil Ahlawat, Baibiao Huang   +3 more
wiley   +1 more source

Materials for Future Quantum Dot‐Based Memories

Journal of Nanomaterials, Volume 2013, Issue 1, 2013., 2013
The present paper investigates the current status of the storage times in self‐organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross‐sections, are listed.
T. Nowozin, D. Bimberg, K. Daqrouq, M. N. Ajour, M. Awedh, Yang Chai   +5 more
wiley   +1 more source

Room‐Temperature Hysteresis in a Hole‐Based Quantum Dot Memory Structure

Journal of Nanotechnology, Volume 2013, Issue 1, 2013., 2013
We demonstrate a memory effect in self‐assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation‐doped field‐effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs.
Tobias Nowozin, Michael Narodovitch, Leo Bonato, Dieter Bimberg, Mohammed N. Ajour, Khaled Daqrouq, Abdullah Balamash, John A. Capobianco   +7 more
wiley   +1 more source

Microscopic Modeling of GaN‐based Heterostructures

VLSI Design, Volume 13, Issue 1-4, Page 387-391, 2001., 2001
Self‐consistent quantum modeling of GaN‐based nanostructure are presented. The tight‐binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.
F. Sacconi, F. Della Sala, A. Di Carlo, Paolo Lugli   +3 more
wiley   +1 more source

RF Performance of Si/SiGe MODFETs: A Simulation Study

VLSI Design, Volume 8, Issue 1-4, Page 325-330, 1998., 1998
The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both devices have equivalent structures corresponding to a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations to estimate the intrinsic noise figures,
S. Roy, A. Asenov, S. Babiker, J. R. Barker, S. P. Beaumont   +4 more
wiley   +1 more source

Inclusion of Quantum Confinement Effects in Self‐Consistent Monte Carlo Device Simulations

VLSI Design, Volume 8, Issue 1-4, Page 21-27, 1998., 1998
The design of Monte Carlo FET simulations is discussed, with specific attention to the methods used to describe quantum confinement effects. A new model is presented, which employs self‐consistent coupling of Schrodinger, Poisson and Monte Carlo algorithms, and explicit calculation of the scattering rates between confined and unconfined states ...
R. W. Kelsall, A. J. Lidsey
wiley   +1 more source

Monte Carlo Calibrated Drift‐Diffusion Simulation of Short Channel HFETs

VLSI Design, Volume 8, Issue 1-4, Page 319-323, 1998., 1998
In this paper we present a methodology to use drift diffusion (DD) simulations in the design of short channel heterojunction FETs (HFETs) with well pronounced velocity overshoot. In the DD simulations the velocity overshoot in the channel is emulated by forcing the saturation velocity in the field dependent mobility model to values corresponding to the
A. Asenov, S. Babiker, S. P. Beaumont, J. R. Barker   +3 more
wiley   +1 more source

Optical and Electronic Properties of Semiconductor 2D Nanosystems: Self‐consistent Tight‐binding Calculations

VLSI Design, Volume 8, Issue 1-4, Page 469-473, 1998., 1998
A tight‐binding models which account for band mixing, strain and external applied potentials in a self‐consistent fashion has been developed. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation.
Andrea Reale, Aldo Di Carlo, Sara Pescetelli, Marco Paciotti, Paolo Lugli   +4 more
wiley   +1 more source