Results 11 to 20 of about 961 (128)

Design and Simulated Characteristics of Nanosized InSb Based Heterostructure Devices

Advances in Materials Science and Engineering, Volume 2014, Issue 1, 2014., 2014
Indium antimonide nanoparticles were synthesized at room temperature. X‐ray diffraction measurements are utilized to characterize the nanocomposites. The InSb nanoparticle has an average particle size in a range of 47 mm to 99 mm which is observed using the XRD result. The InSb is a material which is used to design the transistor. For designing purpose
T. D. Subash, T. Gnanasekaran, C. Divya, J. Jagannathan, George Z. Kyzas   +4 more
wiley   +1 more source

Microwave Analysis for Two‐Dimensional C‐V and Noise Model of AlGaN/GaN MODFET

Advances in Materials Science and Engineering, Volume 2014, Issue 1, 2014., 2014
A new two‐dimensional analytical model for the capacitance‐voltage and noise characteristics of a AlGaN/GaN MODFET is developed. The two‐dimensional electron gas density is calculated as a function of device dimensions. The model includes the spontaneous and polarization effects. The contribution of various capacitances to the performance of the device
Ramnish Kumar, Sandeep K. Arya, Anil Ahlawat, Baibiao Huang   +3 more
wiley   +1 more source

The impact of self-heating and SiGe strain-relaxed buffer thickness on the analog performance of strained Si nMOSFETs [PDF]

, 2010
The impact of the thickness of the silicon–germanium strain-relaxed buffer (SiGe SRB) on the analog performance of strained Si nMOSFETs is investigated.
Alatise, Olayiwola M., Kwa, Kelvin S. K., O'Neill, Anthony G., Olsen, Sarah H.   +3 more
core   +1 more source

Materials for Future Quantum Dot‐Based Memories

Journal of Nanomaterials, Volume 2013, Issue 1, 2013., 2013
The present paper investigates the current status of the storage times in self‐organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement. Experimental data for the electronic properties, such as localization energies and capture cross‐sections, are listed.
T. Nowozin, D. Bimberg, K. Daqrouq, M. N. Ajour, M. Awedh, Yang Chai   +5 more
wiley   +1 more source

Room‐Temperature Hysteresis in a Hole‐Based Quantum Dot Memory Structure

Journal of Nanotechnology, Volume 2013, Issue 1, 2013., 2013
We demonstrate a memory effect in self‐assembled InAs/Al0.9Ga0.1As quantum dots (QDs) near room temperature. The QD layer is embedded into a modulation‐doped field‐effect transistor (MODFET) which allows to charge and discharge the QDs and read out the logic state of the QDs.
Tobias Nowozin, Michael Narodovitch, Leo Bonato, Dieter Bimberg, Mohammed N. Ajour, Khaled Daqrouq, Abdullah Balamash, John A. Capobianco   +7 more
wiley   +1 more source

Generation–recombination noise in gallium nitride-based quantum well structures [PDF]

, 2003
Electronic noise has been investigated in AlxGa1−xN/GaN modulation-doped field-effect transistors of submicron dimensions, grown by molecular beam epitaxy techniques. Some 20 devices were grown on a sapphire substrate. Conduction takes place in the quasi-
Duran, Rolando S., Larkins, Grover L., Jr., Morkoç, Hadis, Van Vliet, Carolyn M.   +3 more
core   +2 more sources

Microscopic Modeling of GaN‐based Heterostructures

VLSI Design, Volume 13, Issue 1-4, Page 387-391, 2001., 2001
Self‐consistent quantum modeling of GaN‐based nanostructure are presented. The tight‐binding approach is used to calculate optical properties while optimized effective mass approaches are used to obtain the output characteristics of GaN HEMT.
F. Sacconi, F. Della Sala, A. Di Carlo, Paolo Lugli   +3 more
wiley   +1 more source

'Backgating' model including self-heating for low-frequency dispersive effects in III-V FETs [PDF]

, 1998
A new approach is proposed which takes into account both traps and thermal phenomena for the modelling of deviations between static and dynamic drain current characteristics in III-V field effect transistors.
Filicori, F., Rinaldi, P., Santarelli, A., Vannini, G.   +3 more
core   +1 more source

RF Performance of Si/SiGe MODFETs: A Simulation Study

VLSI Design, Volume 8, Issue 1-4, Page 325-330, 1998., 1998
The microwave performance potential of Si/SiGe pseudomorphic MODFETs are studied, in comparison to state of the art InGaAs pseudomorphic HEMTs. Both devices have equivalent structures corresponding to a physical HEMT used for calibration. We use an RF analysis technique based on transient Monte Carlo simulations to estimate the intrinsic noise figures,
S. Roy, A. Asenov, S. Babiker, J. R. Barker, S. P. Beaumont   +4 more
wiley   +1 more source

Recessed gate GaN MODFETs

Solid-State Electronics, 1997
Abstract MODFETs, with and without gate recess, were fabricated on a GaN Al 0.27 Ga 0.73 N heterostructure. The gate recess etch was performed with an ECR etch. The gate recess etch improved the maximum transconductance from 23 to 45 mS/mm, ft from 11.4 to 14 GHz, and fmax from 21.2 to 42.5 GHz.
Jinwook Burm, William J. Schaff, Glenn H. Martin, Lester F. Eastman, Hiroshi Amano, Isamu Akasaki   +5 more
openaire   +1 more source