Results 1 to 10 of about 987 (178)

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT) [PDF]

Applied Sciences (Switzerland), 2021
The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT).
Bouchaib Radi
exaly   +4 more sources

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. [PDF]

Micromachines (Basel), 2022
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has the potential to deliver high power and high frequency with performances surpassing mainstream silicon and other advanced semiconductor field-effect transistor (FET)
Haziq M, Falina S, Manaf AA, Kawarada H, Syamsul M.   +4 more
europepmc   +2 more sources

Modeling and Sensitivity Analysis of GaN HEMT Biosensor. [PDF]

Biosensors (Basel)
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) biosensors have recently emerged as promising platforms for highly sensitive and label-free detection of biomolecules. Their exceptional electrical properties, including high carrier mobility,
Yesayan A, Sallese JM.
europepmc   +2 more sources

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
doaj   +1 more source

Crack-Free High-Composition (>35%) Thick-Barrier (>30 nm) AlGaN/AlN/GaN High-Electron-Mobility Transistor on Sapphire with Low Sheet Resistance (<250 Ω/□)

Crystals, 2023
In this article, a high-composition (>35%) thick-barrier (>30 nm) AlGaN/AlN/GaN high-electron-mobility transistor (HEMT) structure grown on a sapphire substrate with ultra-low sheet resistivity (
Swarnav Mukhopadhyay, Cheng Liu, Jiahao Chen, Md Tahmidul Alam, Surjava Sanyal, Ruixin Bai, Guangying Wang, Chirag Gupta, Shubhra S. Pasayat   +8 more
doaj   +1 more source

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Micromachines, 2021
The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu, Xiaoliang Wang   +10 more
doaj   +1 more source

Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD [PDF]

Modern Electronic Materials, 2020
We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT).
Anastasia A. Sleptsova, Sergey V. Chernykh, Dmitry A. Podgorny, Ilya A. Zhilnikov   +3 more
doaj   +3 more sources

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
doaj   +1 more source