Results 11 to 20 of about 7,826 (220)

Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]

Adv Sci (Weinh)
Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F, Xue J, Wu G, Yuan J, Yao J, Liu R, Guo Z, Li Z, Hu H, Sun W, Zhao C, Zhang C, Liu X, Zhang K, Zhang J, Hao Y.   +15 more
europepmc   +2 more sources

Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD [PDF]

Modern Electronic Materials, 2020
We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT).
Anastasia A. Sleptsova, Sergey V. Chernykh, Dmitry A. Podgorny, Ilya A. Zhilnikov   +3 more
doaj   +3 more sources

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

IEEE Journal of the Electron Devices Society, 2021
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility ...
Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz   +6 more
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

On large-signal modeling of GaN HEMTs: past, development and future

Chip, 2023
In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
doaj   +1 more source

Research progress of THz solid state amplifier

Dianzi Jishu Yingyong, 2019
With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin, Wang Weibo, Chen Zhongfei, Sun Hongzheng, Zhou Xibang, Tao Hongqi   +5 more
doaj   +1 more source

50-nm T-gate metamorphic GaAs HEMTs with f_T of 440 GHz and noise figure of 0.7 dB at 26 GHz [PDF]

, 2005
GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs
Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Stanley, C.R., Thayne, I.G.   +5 more
core   +1 more source

125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]

, 2019
To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran, Fuller, Gary A., George, Danielle, Lai, Richard, McGenn, William, Mei, Gerry, Readhead, Anthony, White, Daniel   +7 more
core   +2 more sources

Metalorganic chemical vapor deposition growth and thermal stability of the AllNN/GaN high electron mobility transistor structure [PDF]

, 2011
Cataloged from PDF version of article.The AlxIn1-xN barrier high electron mobility transistor (HEMT) structure has been optimized with varied barrier composition and thickness grown by metalorganic chemical vapor deposition.
Bolukbas, B., Cakmak, H., Caliskan, D., Demirel, P., Ozbay, E., Ozturk, M., Yu, H.   +6 more
core   +1 more source

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Electronics Letters, 2021
A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, Holger Kalisch, Andrei Vescan, Renato Negra   +7 more
doaj   +1 more source