Results 11 to 20 of about 987 (178)
Customized Itinerant Frequency Combs by Cascaded Nonlinear Effects. [PDF]
Adv Sci (Weinh)A cascaded third‐order nonlinear system generates an itinerant frequency comb with the comb center frequency decoupled from the cavity resonance. This enables arbitrary spectral scaling, flexible spacing adjustments, and real‐time central‐frequency engineering, allowing comb splicing and subdivision. The resulting versatility and reconfigurability open
Wang Y +8 more
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Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection
Chemosensors, 2023 Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal ...
Zhixiang Hu +8 more
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Crystals, 2020 The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu +5 more
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IEEE Journal of the Electron Devices Society, 2021 In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility ...
Mamta Pradhan +6 more
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Research progress of THz solid state amplifier
Dianzi Jishu Yingyong, 2019 With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin +5 more
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On large-signal modeling of GaN HEMTs: past, development and future
Chip, 2023 In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
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AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Electronics Letters, 2021 A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios +7 more
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Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
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AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
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Multi-objective optimization of the high electron mobility transistor
International Journal for Simulation and Multidisciplinary Design Optimization, 2023 In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid +3 more
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