Results 11 to 20 of about 2,847 (219)

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +2 more sources

Multi-objective optimization of the high electron mobility transistor

International Journal for Simulation and Multidisciplinary Design Optimization, 2023
In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak   +3 more
doaj   +2 more sources

Review of the AlGaN/GaN High-Electron-Mobility Transistor-Based Biosensors: Structure, Mechanisms, and Applications

Micromachines
Due to its excellent material performance, the AlGaN/GaN high-electron-mobility transistor (HEMT) provides a wide platform for biosensing. The high density and mobility of two-dimensional electron gas (2DEG) at the AlGaN/GaN interface induced by the ...
Chenbi Li, Xinghuan Chen, Zeheng Wang
doaj   +2 more sources

Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation

Nanomaterials, 2022
This paper studies the synergistic effect of total ionizing dose (TID) and displacement damage dose (DDD) in enhancement-mode GaN high electron mobility transistor (HEMT) based on the p-GaN gate and cascode structure using neutron and 60Co gamma-ray ...
Rui Chen, Yanan Liang, Jianwei Han, Qihong Lu, Qian Chen, Ziyu Wang, Hao Wang, Xuan Wang, Runjie Yuan   +8 more
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Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD [PDF]

Modern Electronic Materials, 2020
We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT).
Anastasia A. Sleptsova, Sergey V. Chernykh, Dmitry A. Podgorny, Ilya A. Zhilnikov   +3 more
doaj   +3 more sources

Physical Modeling of Charge Trapping Effects in GaN/Si Devices and Incorporation in the ASM-HEMT Model

IEEE Journal of the Electron Devices Society, 2021
In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into the core Advanced SPICE Model for High Electron Mobility ...
Mamta Pradhan, Mohammed Alomari, Matthias Moser, Dirk Fahle, Herwig Hahn, Michael Heuken, Joachim N. Burghartz   +6 more
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Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

On large-signal modeling of GaN HEMTs: past, development and future

Chip, 2023
In the past few decades, circuits based on gallium nitride high electron mobility transistor (GaN HEMT) have demonstrated exceptional potential in a wide range of high-power and high-frequency applications, such as the new generation mobile ...
Haorui Luo, Wenrui Hu, Yongxin Guo
doaj   +1 more source

Research progress of THz solid state amplifier

Dianzi Jishu Yingyong, 2019
With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin, Wang Weibo, Chen Zhongfei, Sun Hongzheng, Zhou Xibang, Tao Hongqi   +5 more
doaj   +1 more source

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT) [PDF]

Journal of Materials Science and Engineering A, 2011
An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and
null Rajab Yahyazadeh, null Zahra Hashempour   +1 more
openaire   +1 more source