Results 41 to 50 of about 7,826 (220)

Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]

, 2013
Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
core   +2 more sources

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source

Investigation of Normally-Off p-GaN/AlGaN/GaN HEMTs Using a Self-Terminating Etching Technique with Multi-Finger Architecture Modulation for High Power Application

Micromachines, 2021
Normally-off p-gallium nitride (GaN) high electron mobility transistor (HEMT) devices with multi-finger layout were successfully fabricated by use of a self-terminating etching technique with Cl2/BCl3/SF6-mixed gas plasma. This etching technique features
Ya-Chun Chang, Yu-Li Ho, Tz-Yan Huang, Ding-Wei Huang, Chao-Hsin Wu   +4 more
doaj   +1 more source

Amplifier for scanning tunneling microscopy at MHz frequencies

, 2018
Conventional scanning tunneling microscopy (STM) is limited to a bandwidth of circa 1kHz around DC. Here, we develop, build and test a novel amplifier circuit capable of measuring the tunneling current in the MHz regime while simultaneously performing ...
Allan, M. P., Bastiaans, K. M., Benschop, T., Chatzopoulos, D., Cho, D. H., Dong, Q., Jin, Y.   +6 more
core   +4 more sources

Research on the Force-Sensitive Characteristic of InAs QD Embedded in HEMT

Micromachines, 2021
A force-sensitive structure of an InAs Quantum Dot (QD) embedded in a high electron mobility transistor (HEMT) is presented in this paper. The size of an InAs QD is about 30 nm prepared by the S-K growth mode, and the force-sensitive structure is ...
Rui-Rong Wang, Hao Guo, Jun Tang, Jin-Ping Liu, Li-Shuang Liu   +4 more
doaj   +1 more source

Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f_T of 440 GHz for millimeterwave imaging receivers applications [PDF]

, 2005
The 50 nm m-HEMT exhibits extremely high f_T, of 440GHz, low F_min of 0.7 dB, associated gain of 13 dB at 26 GHz with an exceptionally high Id of 200 mA/mm and gm of 950 ms/mm at low noise biased ...
Elgaid, K., Holland, M., McLelland, H., Moran, D., Thayne, I.G.   +4 more
core   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, EarlyView.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Study of tri-gate AlGaN/GaN MOS-HEMTs for power application

Micro and Nano Engineering, 2020
In this letter, we present high-performance AlGaN/GaN high electron mobility transistor (HEMT) by 3-dimensional (3D) tri-gate. Due to the excellent channel control of tri-gate structure, the tri-gate HEMT shows the low subthreshold swing (SS) of 65 mV ...
Kuan Ning Huang, Yueh Chin Lin, Jin Hwa Lee, Chia Chieh Hsu, Jing Neng Yao, Chieh Ying Wu, Chao Hsin Chien, Edward Yi Chang   +7 more
doaj   +1 more source

32 × 32 Pixelated High-Power Flip-Chip Blue Micro-LED-on-HFET Arrays for Submarine Optical Communication

Nanomaterials, 2021
This work proposes the use of integrated high-power InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diode (μ-LED) arrays on an AlGaN/GaN-based heterojunction field-effect transistor (HFET), also known as a high electron mobility ...
Tae Kyoung Kim, Abu Bashar Mohammad Hamidul Islam, Yu-Jung Cha, Joon Seop Kwak   +3 more
doaj   +1 more source

Noise performance of the radio-frequency single-electron transistor [PDF]

, 2004
We have analyzed a radio-frequency single-electron-transistor (RF-SET) circuit that includes a high-electron-mobility-transistor (HEMT)amplifier, coupled to the single-electron-transistor (SET) via an impedance transformer.
Bradley R. F., K. Bladh, K. W. Lehnert, Kerr A. R., Kurokawa K., Lafe Spietz, Leif Roschier, Meyes R. P., P. Delsing, P. Hakonen, Penfield P., R. J. Schoelkopf, Rothe H., Schoelkopf R. J.   +13 more
core   +1 more source