Results 41 to 50 of about 2,847 (219)

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Micromachines
With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field.
Pengfei Dai, Shaowei Wang, Hongliang Lu
doaj   +1 more source

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines, 2018
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility ...
Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek   +10 more
doaj   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Controllable Uniform Green Light Emitters Enabled by Circular HEMT-LED Devices

IEEE Photonics Journal, 2018
This paper reports a monolithic integration of GaN high-electron-mobility transistor (HEMT) and green light-emitting diode (LED), where the circular HEMT is surrounded by a ring-shaped LED and two devices are seamlessly interconnected by the LED's
Yuefei Cai, Yipin Gong, Jie Bai, Xiang Yu, Chenqi Zhu, Volkan Esendag, Kean Boon Lee, Tao Wang   +7 more
doaj   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, Volume 14, Issue 19, 22 May 2026.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

AIP Advances, 2016
In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure ...
Xiaoqing Xu, Jiebin Zhong, Hongyun So, Aras Norvilas, Christof Sommerhalter, Debbie G. Senesky, Mary Tang   +6 more
doaj   +1 more source

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

IEEE Journal of the Electron Devices Society, 2023
A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal quality and surface morphology of the epitaxial material were
Yan Gu, Xuecheng Jiang, Naiyan Lu, Jiarui Guo, Yushen Liu, Xifeng Yang, Weiying Qian, Xiangyang Zhang, Guoqing Chen, Tao Tao, Guofeng Yang   +10 more
doaj   +1 more source