Results 51 to 60 of about 987 (178)

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Optoelectronically Active GaAs/GeSn‐MQW/Ge Heterojunctions Created via Semiconductor Grafting

Advanced Optical Materials, Volume 14, Issue 19, 22 May 2026.
Semiconductor Grafting enables a lattice‐mismatched GaAs/GeSn‐MQW/Ge heterojunction with engineered band offsets and optical field distribution. The enlarged conduction and valence band discontinuities govern asymmetric carrier transport, producing bias‐dependent dual‐mode photodetection from visible to near‐infrared wavelengths.
Jie Zhou, Haibo Wang, Yang Liu, Yifu Guo, Alireza Abrand, Yiran Li, Jiarui Gong, Hieu D. Trinh, Po Rei Huang, Jianping Shen, Shengqiang Xu, Daniel Vincent, Samuel Haessly, Yi Lu, Munho Kim, Shui‐Qing Yu, Parsian K. Mohseni, Guo‐En Chang, Zetian Mi, Kai Sun, Xiao Gong, Mikhail A. Kats, Zhenqiang Ma   +22 more
wiley   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source

100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications

The Scientific World Journal, 2014
We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime.
Cyrille Gardès, Sonia Bagumako, Ludovic Desplanque, Nicolas Wichmann, Sylvain Bollaert, François Danneville, Xavier Wallart, Yannick Roelens   +7 more
doaj   +1 more source

Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications

Journal of Science: Advanced Materials and Devices, 2020
We present a performance enhancement evaluation of n + doped graded InGaN drain/source region-based HfO2/InAlN/AlN/GaN/AlN on SiC metal-oxide-semiconductor high electron mobility transistor (MOS-HEMTs) with a T-shaped gate.
P. Murugapandiyan, A. Mohanbabu, V. Rajya Lakshmi, V.N. Ramakrishnan, Arathy Varghese, MOHD Wasim, S. Baskaran, R. Saravana Kumar, V. Janakiraman   +8 more
doaj   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment

Results in Physics, 2019
Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj   +1 more source