Results 61 to 70 of about 987 (178)

First‐Principles Study of Structural, Elastic, and Piezoelectric Properties of Wurtzite Superlattice ScxAl1−xN, ScxGa1−xN, and ScxIn1−xN Alloys

physica status solidi (b), Volume 263, Issue 4, April 2026.
This study investigates the structural, elastic, and piezoelectric properties of Sc‐doped wurtzite nitrides using first‐principles calculations. A strong compositional dependence of elastic and piezoelectric coefficients is observed, with significant nonlinearities providing insights into the tunability of these materials for piezoelectric applications.
Hang Cui, William Alan Doolittle, Lukas Graber, Paul Douglas Yoder   +3 more
wiley   +1 more source

CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019
The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems.
V. S. Volchek, D. HA. Dao, I. Yu. Lovshenko, V. R. Stempitsky   +3 more
doaj  

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines, 2019
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Nanoscale Research Letters, 2019
In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between ...
Chao Yang, Xiaorong Luo, Tao Sun, Anbang Zhang, Dongfa Ouyang, Siyu Deng, Jie Wei, Bo Zhang   +7 more
doaj   +1 more source

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Electronics Letters
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang   +6 more
doaj   +1 more source

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

AIP Advances, 2018
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT).
Xurui Mao, Sheng Xie, Changju Zhu, Zhaoxin Geng, Hongda Chen   +4 more
doaj   +1 more source

Virtual prototype and GaN HEMT based high frequency LLC converter design

The Journal of Engineering, 2019
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of the fast switch speed, low on resistance and low switch loss is applicable to high-frequency LLC converters.
Long Xiao, Liang Wu, Liang Wu, Jun Zhao, Guozhu Chen   +4 more
doaj   +1 more source

On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field

AIP Advances, 2019
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT when
Isabel Harrysson Rodrigues, David Niepce, Arsalan Pourkabirian, Giuseppe Moschetti, Joel Schleeh, Thilo Bauch, Jan Grahn   +6 more
doaj   +1 more source

Modeling of high electron mobility transistors

Технологія та конструювання в електронній апаратурі, 2003
The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed.
P. A. Emtsev
doaj  

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

IEEE Access
GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages.
Muhammad Faizan, Kai Han, Xiaolei Wang, Muhammad Zain Yousaf   +3 more
doaj   +1 more source