Results 61 to 70 of about 2,847 (219)
Nano Select, Volume 7, Issue 2, February 2026.Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich +3 more
wiley +1 more source
Highly sensitive extended gate-AlGaN/GaN high electron mobility transistor for bioassay applications
, 2017 An extended gate-AlGaN/GaN high electron mobility transistor (EG-AlGaN/GaN HEMT) with a high sensitivity for bioassay has been developed.
Wu, BJ +21 more
core +1 more source
100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
The Scientific World Journal, 2014 We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime.
Cyrille Gardès +7 more
doaj +1 more source
Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment
Results in Physics, 2019 Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj +1 more source
physica status solidi (b), Volume 263, Issue 2, February 2026.The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto +4 more
wiley +1 more source
, 2014 An oligonucleotide-functionalized ion sensitive AlGaN/GaN high electron mobility transistor (HEMT) was fabricated to detect trace amounts of Hg2+. The advantages of ion sensitive AlGaN/GaN HEMT and highly specific binding interaction between Hg2+ and ...
Cheng JJ(程珺洁) +4 more
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HEMT carrier mobility analytical model
, 2005 In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented.
R.M. Ramović +7 more
core +1 more source
CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems.
V. S. Volchek +3 more
doaj
Rare Metals, Volume 45, Issue 2, February 2026.ABSTRACT The transformative potential of gallium nitride high electron mobility transistors (GaN HEMTs) in advancing carbon‐neutral power systems remains bottlenecked by contact resistance (Rc) at the metal–semiconductor (M‐S) interface, a critical determinant of switching losses and frequency response.
Ji‐Zhou Zhang +8 more
wiley +1 more source
Research on biomolecule-gate AlGaN/GaN high-electron-mobility transistor biosensors
, 2014 In order to enhance the performance of AlGaN/GaN high electron mobility transistor (HEMT) biosensor, millimeter grade AlGaN/GaN HEMT structure have been designed and successfully fabricated.
Cheng, JJ (程珺洁) +6 more
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