Results 61 to 70 of about 7,826 (220)

Monte Carlo simulations of high-performance implant free In_0.3Ga_0.7 nano-MOSFETs for low-power CMOS applications [PDF]

, 2007
No abstract ...
Asenov, A., Droopad, R., Hill, R.J.W., Kalna, K., Long, A.R., Moran, D.A.J., Passlack, M., Thayne, I.G., Wilson, J.A.   +8 more
core   +1 more source

Effect of Temperature on the Electronic Current of AlGaN/GaN High Electron Mobility Transistors (HEMT) [PDF]

Journal of Materials Science and Engineering A, 2011
An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well. Salient futures of the model are incorporated of fully and
null Rajab Yahyazadeh, null Zahra Hashempour   +1 more
openaire   +1 more source

Systematic Study of Fermi‐Level Pinning at Crystalline Metal/GaN Interfaces: First‐Principles Calculations and Diode Characterization

Rare Metals, Volume 45, Issue 3, March 2026.
ABSTRACT The Schottky barrier height (SBH), which serves as a pivotal determinant of charge carrier injection efficiency in electronic devices, critically governs electrical behavior at metal/semiconductor interfaces. However, pronounced metal‐induced gap states at metal contact interfaces induce Fermi‐level pinning, which constrains the ...
Xiaofei Liu, Wen Ji, Jiaren Feng, Ming Jiang, Chunmin Cheng, Wei Yu, Hailing Guo, Baikui Li, Hui Li, Zhaofu Zhang, Xi Tang   +10 more
wiley   +1 more source

Wafer-level MOCVD growth of AlGaN/GaN-on-Si HEMT structures with ultra-high room temperature 2DEG mobility

AIP Advances, 2016
In this work, we investigate the influence of growth temperature, impurity concentration, and metal contact structure on the uniformity and two-dimensional electron gas (2DEG) properties of AlGaN/GaN high electron mobility transistor (HEMT) structure ...
Xiaoqing Xu, Jiebin Zhong, Hongyun So, Aras Norvilas, Christof Sommerhalter, Debbie G. Senesky, Mary Tang   +6 more
doaj   +1 more source

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

IEEE Journal of the Electron Devices Society, 2023
A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal quality and surface morphology of the epitaxial material were
Yan Gu, Xuecheng Jiang, Naiyan Lu, Jiarui Guo, Yushen Liu, Xifeng Yang, Weiying Qian, Xiangyang Zhang, Guoqing Chen, Tao Tao, Guofeng Yang   +10 more
doaj   +1 more source

High intensity study of THz detectors based on field effect transistors

, 2014
Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm^2 was studied for Si metal-oxide-semiconductor field-effect transistors and ...
But, Dmytro B., Drachenko, Oleksiy, Drexler, Christoph, Dyakonova, Nina, Ganichev, Sergey D., Gutin, Alexey, Knap, Wojciech, Sakhno, Mykola V., Sizov, Fiodor F.   +8 more
core   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

A Novel AlGaN/Si₃N₄ Compound Buffer Layer HEMT with Improved Breakdown Performances

Micromachines, 2022
In this article, an AlGaN and Si3N4 compound buffer layer high electron mobility transistor (HEMT) is proposed and analyzed through TCAD simulations. In the proposed HEMT, the Si3N4 insulating layer is partially buried between the AlGaN buffer layer and ...
Jingwei Guo, Shengdong Hu, Ping Li, Jie Jiang, Ruoyu Wang, Yuan Wang, Hao Wu   +6 more
doaj   +1 more source

Nitride Ferroelectric Domain Wall Memory for Next‐Generation Computing

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
In this study, a nitride ferroelectric domain wall memory (FeDMEM) device with potential for scalable integration into conventional CMOS technology is demonstrated. The novel domain wall conduction phenomena and its reflection in the memristive response of fiber‐textured Pt/Al0.72Sc0.28N(20 nm)/Pt capacitors is examined, revealing high read currents ...
Georg Schönweger, Deik Dasenbrook, Niklas Kyoushi, Roberto Guido, Adrian Petraru, Thomas Mikolajick, Uwe Schröder, Hermann Kohlstedt, Simon Fichtner   +8 more
wiley   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source