Monolithically integrating polarization-doped InGaN p-FET and GaN n-FET for complementary logic circuitry. [PDF]
Yu J +12 more
europepmc +1 more source
Sensitive and wafer-scale olfactory sensory neurons. [PDF]
Zhang W +9 more
europepmc +1 more source
AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]
Yu Y +9 more
europepmc +1 more source
Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]
Moscotin M +5 more
europepmc +1 more source
Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]
Sengupta R, Sarusi G.
europepmc +1 more source
Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]
Pu T, Li X, Li L, Ao JP.
europepmc +1 more source
Microwave-acoustic-based isolated gate driver for power electronics. [PDF]
Jin L +8 more
europepmc +1 more source
Engineering ScAlN Polar Properties for Advanced Electronic and Synaptic Applications. [PDF]
Zhang J +7 more
europepmc +1 more source
Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Liu F +15 more
europepmc +1 more source
An Adaptive Gate-Side Feedback Active Gate Driver for GaN Devices with Optimized Switching Performance. [PDF]
Zhang Y +8 more
europepmc +1 more source

