Terahertz Radiation Detection by Field Effect Transistor in Magnetic Field
, 2009 We report on terahertz radiation detection with InGaAs/InAlAs Field Effect Transistors in quantizing magnetic field. The photovoltaic detection signal is investigated at 4.2 K as a function of the gate voltage and magnetic field.
Boubanga-Tombet, S. +8 more
core +3 more sources
Simple approach to include external resistances in the Monte Carlo simulation of MESFETs and HEMTs [PDF]
, 1996 The contact and external series resistances play an important role in the performance of modern 0.1-0.2 μm HEMT's. It is not possible to include these resistances directly into the Monte Carlo simulations.
Asenov, A. +3 more
core +1 more source
Improved Electron Transport Properties in InSb/Ga0.22In0.78Sb Composite Channel HEMT Structures
physica status solidi (a), Volume 223, Issue 2, January 2026.The effectiveness of double‐sided Te δ‐doping and engineered buffer structure consisting of GaSb buffer and AlInSb‐graded buffer is investigated in InSb/Ga0.22In0.78 Sb composite channel HEMTs. The degree of threading dislocation suppression is quantitatively analyzed using a pair‐annihilation model.
Tatsuhisa Oba +10 more
wiley +1 more source
100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption, Low-Noise Applications
The Scientific World Journal, 2014 We report on high frequency (HF) and noise performances of AlSb/InAs high electron mobility transistor (HEMT) with 100 nm gate length at room temperature in low-power regime.
Cyrille Gardès +7 more
doaj +1 more source
Demonstration of hydrogen sensing operation of AlGaN/GaN HEMT gas sensors in extreme environment
Results in Physics, 2019 Extreme environment operation of hydrogen gas sensing was demonstrated by AlGaN/GaN high electron mobility transistor (HEMT) sensors under the condition of high temperature and energetic irradiation. The HEMT-type gas sensors were fabricated on AlGaN/GaN-
G.H. Chung, T.A. Vuong, H. Kim
doaj +1 more source
Analysis and Design of a DC‐to‐24 GHz Compact High‐Speed Inductor‐less SPDT Switch
Electronics Letters, Volume 62, Issue 1, January/December 2026.ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility,
Jiashu Guo +3 more
wiley +1 more source
Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter
International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s ...
Minshi Jia +7 more
wiley +1 more source
CONSTRUCTION AND TECHNOLOGICAL CHARACTERISTICSOF WIDE BANDGAP SEMICONDUCTORS SENSORS
Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 The development and research of new constructive solutions, materials and technologies for sensor systems production is an actual problem. The transistor with high electron mobility (HEMT) is increasingly being used in such systems.
V. S. Volchek +3 more
doaj
Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]
, 2012 Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core +2 more sources
Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3
Advanced Functional Materials, Volume 35, Issue 51, December 16, 2025.Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko +5 more
wiley +1 more source