Results 81 to 90 of about 2,847 (219)
Nanoscale Research Letters, 2019 In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between ...
Chao Yang +7 more
doaj +1 more source
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling
Electronics LettersThis paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong +6 more
doaj +1 more source
, 2002 A step-graded InAlAs buffer layer and an In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor (MM-HEMT) structures were grown by molecular beam epitaxy on GaAs (001) substrates, and rapid thermal annealing was performed on them in ...
Wu J +6 more
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, 2006 4.2 K photoluminescence (PL) and 77 K standard Hall-effect measurements were performed for In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor (HEMT) structures grown on GaAs substrates with different indium contents in the InxGa1-xAs
Cui, LJ, Chinese Acad Sci, Novel Mat Lab, Inst Semicond, Beijing 100083, Peoples R China. E-mail: ljcui@red.semi.ac.cn +6 more
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, 2019 III-V heterostructure based high electron mobility transistors (HEMTs) offer superior performance as compared to CMOS silicon transistors owing to the high mobility in the 2D electron gas (2DEG) channel at the heterostructure interface.
Siddharth Tallur (17506503) +2 more
core +1 more source
High-quality metamorphic HEMT grown on GaAs substrates by MBE
, 2001 Metamorphic high electron mobility transistor (M-HEMT) structures have been grown on GaAs substrates by molecular beam epitaxy (MBE). Linearly graded and the step-graded InGaAs and InAlAs buffet layers hal e been compared, and TEM, PL and low-temperature
Cui LJ +7 more
core +1 more source
Self-consistent analysis of AlSb/InAs high electron mobility transistor structures
, 2010 The influences of channel layer width, spacer layer width, and delta-doping density on the electron density and its distribution in the AlSb/InAs high electron mobility transistors (HEMTs) have been studied based on the self-consistent calculation of the
ypzeng@semi.ac.cn +4 more
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Virtual prototype and GaN HEMT based high frequency LLC converter design
The Journal of Engineering, 2019 Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of the fast switch speed, low on resistance and low switch loss is applicable to high-frequency LLC converters.
Long Xiao +4 more
doaj +1 more source
, 2007 Magnetotransport properties of In-0.53 GaAs/In-0.52 AlAs high electron mobility transistor (HEMT) structures with different channel thickness of 10-35 nm have been investigated in magnetic fields up to 13 T at 1.4 K.
Zhu, ZP (Zhu Zhan-Ping) +7 more
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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
, 2006 AlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition.
Li Jianping +11 more
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