High electron mobility transistor hemt

Results 101 to 110 of about 2,847 (219)

Modeling of high electron mobility transistors

Технологія та конструювання в електронній апаратурі, 2003
The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed.
P. A. Emtsev
doaj

Electromechanical Displacement Detection With an On-Chip High Electron Mobility Transistor Amplifier

, 2011
We developed a highly sensitive displacement detection scheme for a GaAs-based electromechanical resonator using an integrated high electron mobility transistor (HEMT).
Reo Kometani +5 more
core +1 more source

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

Power Electronic Devices and Components
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle +6 more
doaj +1 more source

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

, 2006
Unintentionally doped high-Al-content Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT) structures with and without AlN interfacial layer were grown by metal-organic chemical vapor deposition (MOCVD) on two-inch sapphire substrates.
Wang JX (Wang Junxi) +6 more
core

Modeling of AlGaN/GaN High Electron Mobility Transistor for Sensors and High-Temperature Circuit Applications

, 2008
With the most advanced and mature technology for electronic devices, silicon (Si) based devices can be processed with practically no material defects.
Eliza, Sazia Afreen
core +1 more source

High Electron Mobility Transistor Structures on Sapphire Substrates Using CMOS Compatible Processing Techniques

, 2004
System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power ...
Mueller, Carl +3 more
core +1 more source

Deep centers investigations of P-HEMT functional materials of ultra-high-speed microstructures grown by MBE

, 2002
The deep centers of high electron mobility transistor (HEMT) and pseudomorphic-HEMT (P-HEMT) functional materials of ultra-high-speed microstructures grown by MBE are investigated using deep level transient spectroscopy (DLTS) technique.
Ge W +4 more
core

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

, 2007
Enhancement of the electrical properties in an AlGaN/GaN high electron mobility transistor (HEMT) structures was demonstrated by employing the combination of a high mobility GaN channel layer and an AlN interlayer. The structures were grown on 50 mm semi-
Li HP (Li Hanping) +12 more
core

Ultrahigh-Responsivity Ultraviolet Photodetectors Based on AlGaN/GaN Double-Channel High-Electron-Mobility Transistors

In this work, high-performance ultraviolet (UV) photodetectors (PDs) based on an AlGaN/GaN double-channel high-electron-mobility transistor (HEMT) were fabricated and investigated using 360 nm illumination.
Yaozong Zhong (17688516) +7 more
core +1 more source

7. clean energy
hemt
physics

gan hemt
breakdown voltage
reliability

algan/gan
algan/gan hemt
gan