Results 101 to 110 of about 7,826 (220)

Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations

IEEE Access
GaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages.
Muhammad Faizan, Kai Han, Xiaolei Wang, Muhammad Zain Yousaf   +3 more
doaj   +1 more source

The High-Electron Mobility Transistor at 30: Impressive Accomplishments and Exciting Prospects [PDF]

, 2011
2010 marked the 30th anniversary of the High-Electron Mobility Transistor (HEMT). The HEMT represented a triumph for the, at the time, relatively new concept of bandgap engineering and nascent molecular beam epitaxy technology.
del Alamo, Jesus A.
core   +1 more source

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

, 2019
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain.
Dolmanan, Surani B., Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy N., Tripathy, Sudhiranjan   +4 more
core   +1 more source

GaN-based sensor nodes for in situ detection of gases [PDF]

, 2008
A system for detecting chemical/biological substances and a detection method. The system comprises a plurality of sensing units or nodes and a radiofrequency link. Each unit has several sensors with different sensing curves.
Moon, Jeong-Sun, Prokopuk, Nicholas, Son, Kyung-Ah   +2 more
core   +1 more source

High Dynamic Range RF Front End with Noise Cancellation and Linearization for WiMAX Receivers [PDF]

, 2012
This research deals with verification of the high dynamic range for a heterodyne radio frequency (RF) front end. A 2.6 GHz RF front end is designed and implemented in a hybrid microwave integrated circuit (HMIC) for worldwide interoperability for ...
Chuang, C.-J., Wu, J.-M., Yeh, C.-H.
core   +1 more source

Yüksek elektron hareketli transistör (high electron mobility transistor, HEMT) distorsiyon analizi

, 2020
214
openaire   +1 more source

A 2.3-GHz cryogenically cooled HEMT amplifier for DSS 13 [PDF]

A prototype 2.3 GHz (S band) high electron mobility transistor (HEMT) amplifier/closed cycle refrigerator (CCR) system was installed in the DDS-13 feedcone, replacing the 2.3 GHz maser.
Tanida, L.
core   +1 more source

Normally-off GaN HEMTs [PDF]

, 2016
As silicon transistors have become a staple in everyday usages, other semiconductor materials (specifically III-V materials) are being researched to determine how their differing physical properties can be harnessed toward even better devices or ...
Tsai, Philip
core  

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

Power Electronic Devices and Components
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle, Frank Altmann, Susanne Hübner, Johannes Bruckmeier, Richard Neumann, Manuel Stabentheiner, Clemens Ostermaier   +6 more
doaj   +1 more source

Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT)

, 2018
For higher frequency operation, the device such as high electron mobility transistor (HEMT) needs to be scaled down by reducing the gate length. However, in the case of high voltage operation with reduced gate length, the high concentration of two-dimensional electron gas (2DEG) obtained in the HEMT epistructures may spill over from the quantum well to
openaire   +2 more sources