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Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]
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Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)
Applied Physics A: Materials Science and Processing, 2020In this study, a Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (ρ), Hall mobility (μ) and carrier density (n) are measured in 0.01–0.14 T magnetic field range and 25–340 K temperature range.
Süleyman Özçelik +2 more
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The early history of the high electron mobility transistor (HEMT)
IEEE Transactions on Microwave Theory and Techniques, 2002The early history of the high electron mobility transistor illustrates the way in which a new device idea occurs and is developed towards commercialization. The events which took place in our laboratory are described in this paper.
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Reliability based design optimization applied to the high electron mobility transistor (HEMT)
Microelectronics Reliability, 2021Abstract Among the most important components in complex and high-power mechatronic systems is the transistor. The High Electron Mobility Transistor (HEMT) is a technology under development. This paper presents the hybrid Reliability Based Design Optimization (RBDO) method applied to the HEMT technology in order to improve its performance and ...
Abdelkhalak EL HAMI, Bouchaib Radi
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A DC model for the high electron mobility transistor (HEMT)
[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, 2002A novel analytical HEMT model is developed. The conduction mechanism due to the 2-DEG (two-dimensional electron gas) and the parallel AlGaAs is included. The numerical calculations of n/sub s/ and n/sub t/ were fitted to two closed-form analytical expressions that are easily integrable along the channel and are smooth to avert any discontinuity in the ...
M. Saleh, M. El-Nokali
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High-frequency admittance of high-electron-mobility transistors (HEMTs)
Solid-State Electronics, 1983Abstract By solving the wave equation of the high-electron-mobility-transistor by an approximation method, the input admittance Ygs = ggs + jωCgs of the device is evaluated. The input conductance ggs plays a role in the calculation of the minimum noise figure of the device at high frequencies.
A. van der Ziel, E.N. Wu
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Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)
2012 International Conference on Devices, Circuits and Systems (ICDCS), 2012AlGaN/GaN HEMT is the forefront of semiconductor research because of its exciting physical properties and it is the choice of suitable candidate for high power electronic innovations. In general, the AlGaN/GaN can operate at higher voltages and these high bias conditions induce high electric field within the device structure that leads to degradation ...
S. Nandha Kumar, B. Bindu
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Analysis of quantum wire high electron mobility transistor (HEMT) structure
Solid-State Electronics, 1996Abstract An analytical model predicting the electrical characteristics of a high electron mobility transistor (HEMT) structure with a quantum well wire (QWW) channel is proposed. Electron energy levels in the quantum wire and electron wave functions inside and outside the quantum wire are computed. Analytical results on self-consistent calculation of
S.K. Islam, F.C. Jain
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Two‐dimensional numerical analysis for high electron mobility transistors (HEMTs)
Electronics and Communications in Japan (Part II: Electronics), 1985AbstractA two‐dimensional numerical model has been developed for the analysis of operation of a high electron mobility transistor (HEMT) based on the AlGaAs/GaAs heterojunction. In this model, the basic equations are formulated under the assumption that the band structure is continuous and Boltzmann statistics are applicable.
Jiro Yoshida, Mamoru Kurata
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Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)
2017 Devices for Integrated Circuit (DevIC), 2017In this paper the, Antimonide-based HEMTs have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.1 In 0.9 Sb barrier and back-barriers. These HEMTs with 50 nm gate length exhibit improved electron density, mobility, DC and analog/RF performances.
M. Sheerin Begum +3 more
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