Novel ultrafast functional device: resonant tunneling high electron mobility transistor
, 1996 This paper demonstrates an InP-based resonant-tunneling high electron mobility transistor (RTHEMT) which integrates a pseudomorphic In0.53Ga0.47As/AlAs/InAs RTD into the source of a non-alloyed ohmic contact InAlAs/InGaAs HEMT.
Chen, Kevin J. +2 more
core
Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]
Sci RepLee KH, Yang Y, Heo J, Kim JH.
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A High Performance AlGaN/GaN HEMT with a New Method for T-Gate Layout Design
, 2008 We propose and fabricate an A1GaN/GaN high electron mobility transistor （HEMT） on sapphire substrate using a new kind of electron beam （EB） lithography layout for the T-gate.
Chen Zhigang +6 more
core
Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]
ACS OmegaOmar A, Loan SA.
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A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. [PDF]
Micromachines (Basel)Wang C +6 more
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Yüksek elektron hareketli transistör (high electron mobility transistor, HEMT) distorsiyon analizi
, 2020 214
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Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]
ACS OmegaQureshi B, Alharbi AG, Ayub R, Loan SA.
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Advances in High-Voltage Power Electronics Using Ga<sub>2</sub>O<sub>3</sub>-Based HEMT: Modeling. [PDF]
Materials (Basel)Alhasani R +4 more
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Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]
Light Sci ApplWang L +10 more
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