Results 131 to 140 of about 987 (178)

Review of Simulation of High Electron-Mobility Transistor (HEMT) Devices

ECS Meeting Abstracts
We review technology computer-aided-design (TCAD) simulation of high electron-mobility transistors (HEMTs), with a focus on GaN and related III–V technologies used in power, RF, and radiation-hard applications. This work traces the evolution from conventional drift–diffusion approaches to electrothermal co-simulation and hydrodynamic and energy ...
Erin Patrick, Ian Stafford, Mark Law
openaire   +1 more source

High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications

physica status solidi (a), 2001
High-electron-mobility transistors (HEMTs) based on AlGaN/GaN heterostructures were successfully tested as chemically sensing devices. Exposing the unprotected polar GaN surface in the gate area of a HEMT to liquids of different polarity, milliampere changes in the source-drain current could be detected.
R. Neuberger, G. M�ller, O. Ambacher, M. Stutzmann   +3 more
openaire   +1 more source

Biological detection by high electron mobility transistor (HEMT) based AlGaN/GaN

physica status solidi c, 2014
AbstractMaterials based on gallium nitride are characterized by a wide bandgap. The excellent chemical, physical and electronic properties give them a place in various fields: electronics, optoelectronics, photovoltaics, military, biological and medical.
Oussama Zeggai, Amaria Ould‐Abbas, Mama Bouchaour, Hichem Zeggai, Nordine Sahouane, Malika Madani, Djamel Trari, Meriem Boukais, N.‐E. Chabane‐Sari   +8 more
openaire   +1 more source

Comparative analysis on nitride-based high electron mobility transistor (HEMT)

Physica Scripta
Abstract This paper explores a comparative analysis on different types of High Electron Mobility Transistors (HEMTs), in particular the significant role of oxide layers in enhancing the performance of metal-oxide-semiconductor (MOS)-HEMTs compared to both passivated and unpassivated HEMTs, particularly in high-frequency and low-noise ...
Jayanth Kumar Porala, Way Foong Lim
openaire   +1 more source

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

2015
Abstract : The purpose of this report is to investigate the low temperature Photoluminescence (PL) from High Electron Mobility Transistor (HEMT) structures that have been modified by proton irradiation. The samples are aluminum gallium nitride (AlGaN)/gallium nitride (GaN) and indium aluminum nitride (InAlN)/GaN HEMT structures.
Henry O. Everitt, Adam T. Roberts
openaire   +1 more source

Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)

2023 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD), 2023
Fei Yu, Qi-Ming Zeng, Rong Song, Jian Tang, Ya-Ting Wu   +4 more
openaire   +2 more sources

High electron mobility transistor (HEMT)

2021
CHIANG HUAI-TZU, LIN SHENG-HAO, LIU KUAN-HUNG   +2 more
openaire   +5 more sources

High Electron Mobility Transistors (HEMTs)

2007
Prashant Chavarkar, Umesh Mishra
openaire   +1 more source

Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)

2022
Nhu Q. Tran, Loc T. P. Nguyen, Tri M. Do, Quan M. Hoang   +3 more
openaire   +1 more source

e-HEMT : an engineering model for GAN-based high electron mobility transistors

2014
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers .and high-power switching applications.
openaire   +2 more sources