Results 131 to 140 of about 2,847 (219)

Reinforcement Learning-Based Optimization of Ku-Band Low-Noise Amplifier. [PDF]

Micromachines (Basel)
Chung J, Shin H, Shin S, Kim Y, Zeinolabedinzadeh S, Ji D, Song I.   +6 more
europepmc   +1 more source

The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel)
Chang PH, Huang CR, Liu CH, Lee KW, Chiu HC.   +4 more
europepmc   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

Utilization of BiLSTM- and GAN-Based Deep Neural Networks for Automated Power Amplifier Optimization over X-Parameters. [PDF]

Sensors (Basel)
Kouhalvandi L.
europepmc   +1 more source

Monolithically Integrated THz Detectors Based on High-Electron-Mobility Transistors. [PDF]

Sensors (Basel)
Rämer A, Negri E, Dischke E, Chevtchenko S, Yazdani H, Schellhase L, Krozer V, Heinrich W.   +7 more
europepmc   +1 more source

Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]

Micromachines (Basel)
Li S, Zhang H, Ma Y, Wang Q, Wang K, Xia Y, Wu L, Li Y, Zhu T, Ye R, Wei J, Zhang L, Liu S, Sun W.   +13 more
europepmc   +1 more source

Making UV light visible by exciting polarization-gate phototransistor to achieve energy transfer into GaN-based blue emission. [PDF]

Light Sci Appl
Chu C, Jiang Y, He C, Li W, Tian K, Zhang Y, Sun X, Zhang ZH.   +7 more
europepmc   +1 more source

Thermal Management with AlN Passivation in AlGaN/GaN HEMTs with an Air Gap Gate for Improved RF Performance: A Simulation Study. [PDF]

Micromachines (Basel)
Won YH, Kim TS, Lee JH, Lim CY, Min BG, Kang DM, Kim HS.   +6 more
europepmc   +1 more source

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]

Micromachines (Basel)
Baca-Arroyo R.
europepmc   +1 more source

Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]

J Power Electron
Raza A, Babar MZ, Shahid MU, Gulzar H, Gulzar Z, Rahman SU.   +5 more
europepmc   +1 more source