Results 131 to 140 of about 7,826 (220)

Fault interruption scheme for HVDC systems using GaN-HEMT and VCB. [PDF]

J Power Electron
Raza A, Babar MZ, Shahid MU, Gulzar H, Gulzar Z, Rahman SU.   +5 more
europepmc   +1 more source

Impact of Multi-Bias on the Performance of 150 nm GaN HEMT for High-Frequency Applications. [PDF]

Micromachines (Basel)
Alim MA, Gaquiere C.
europepmc   +1 more source

Interface-Driven Electrothermal Degradation in GaN-on-Diamond High Electron Mobility Transistors. [PDF]

Nanomaterials (Basel)
Wang H, Liu Y, Dong X, Ullah A, Sun J, Zhang C, Xiong Y, Gu P, Chen G, Liu X.   +9 more
europepmc   +1 more source

Design of a High-Power, High-Efficiency GaN Power Amplifier for W-Band Applications. [PDF]

Micromachines (Basel)
Liu S, Ma X, Zhang Y, Xu C.
europepmc   +1 more source

Research on Switching Current Model of GaN HEMT Based on Neural Network. [PDF]

Micromachines (Basel)
Wang X, Zhao Z, Chen H, Sun X, Wang S, Zhang G.   +5 more
europepmc   +1 more source

Defect Reduction in HEMT Epilayers on SiC Meta-Substrates. [PDF]

Nanomaterials (Basel)
Su VC, Wei TY, Chen MH, Ku CT, Liu GS.
europepmc   +1 more source

Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]

Micromachines (Basel)
Lu H, Hao X, Zhang Y, Yang L, Hou B, Zhang M, Wu M, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Design and Application of p-AlGaN Short Period Superlattice. [PDF]

Micromachines (Basel)
Liu Y, Chen C, Zhou X, Li P, Yang B, Zhang Y, Bai J.   +6 more
europepmc   +1 more source

Cryogenic quantum computer control signal generation using high-electron-mobility transistors. [PDF]

Commun Eng
Ferraris A, Cha E, Mueller P, Moselund K, Zota CB.   +4 more
europepmc   +1 more source

Pulsed operation and performance of commercial GaN HEMTs [PDF]

, 2009
Beach, MA, Fornetti, F, Morris, KA
core