An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]
Miao Y, Yuan Q, Wang C, Cheng J.
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Application of biosensors in research of traditional Chinese medicine: a systematic review. [PDF]
Du S, Zhang F, Yan X, Huang L, Wang Z.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Weis M.
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Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors. [PDF]
Grandpierron F +4 more
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AuNis modified AlGaN/GaN HEMT biosensor for reliable detection of small Rho GTPases in Jurkat T cell lysate. [PDF]
Fauzi N +6 more
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Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate. [PDF]
Kim B, Park SH.
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GaN HEMT Oscillators with Buffers. [PDF]
Jang SL, Huang CY, Yang TC, Lu CT.
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High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. [PDF]
Wu Y +7 more
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Surpassing kilometer-scale terahertz wireless communication beyond 300 GHz enabled by hybrid photonic-electronic synergy. [PDF]
Cai Y +17 more
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Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit. [PDF]
Chang Y +5 more
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