Results 151 to 160 of about 7,826 (220)

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]

Sci Adv
Sang Y, Xu X, Wu Y, Feng G, Zhang X, Zhuo F, Jin Z, Guo H, Tao T, Ding S, Wang X, Chen D, Ohkawa K, Xing K, Wang X, Zhuang Z, Zhang R, Alshareef HN, Liu B.   +18 more
europepmc   +1 more source

Using both faces of polar semiconductor wafers for functional devices. [PDF]

Nature
van Deurzen L, Kim E, Pieczulewski N, Zhang Z, Feduniewicz-Zmuda A, Chlipala M, Siekacz M, Muller D, Xing HG, Jena D, Turski H.   +10 more
europepmc   +1 more source

A Review of Ku-Band GaN HEMT Power Amplifiers Development. [PDF]

Micromachines (Basel)
Kim J.
europepmc   +1 more source

Investigation of III-Nitride MEMS Pressure Sensor for High-Temperature Applications. [PDF]

Micromachines (Basel)
Prio MH, Morshed M, Muthusamy L, Raju MSEH, Towfeeq I, Gajula D, Koley G.   +6 more
europepmc   +1 more source

Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C-V Investigation. [PDF]

Micromachines (Basel)
Ackermann V, El Amrani M, Mohamad B, Ben Abbes R, Charles M, Cavalaglio S, Manrique M, Buckley J, Salem B.   +8 more
europepmc   +1 more source

Real-Time 0.89 THz Terahertz Imaging with High-Electron-Mobility Transistor Detector and Hydrogen Cyanide Laser for Non-Destructive Nut Detection. [PDF]

Micromachines (Basel)
Zhang N, Liu H, Yan H, Wang H, Xie J, Jie Y, Yao D.   +6 more
europepmc   +1 more source

Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure. [PDF]

Micromachines (Basel)
Hao L, Liu Z, Du H, Zhao S, Wang H, Zhang J, Hao Y.   +6 more
europepmc   +1 more source

Numerical study of terahertz radiation from N-polar AlGaN/GaN HEMT under asymmetric boundaries. [PDF]

Front Optoelectron
Xing R, Guo H, Guo B, Yu G, Zhang P, Zhou J, Yang A, Li Y, Hao C, Yue H, Zeng Z, Zhang X, Zhang B.   +12 more
europepmc   +1 more source

Normally Off AlGaN/GaN MIS-HEMTs with Self-Aligned p-GaN Gate and Non-Annealed Ohmic Contacts via Gate-First Fabrication. [PDF]

Micromachines (Basel)
Yin Y, Fan Q, Ni X, Guo C, Gu X.
europepmc   +1 more source

Improvement of Single Event Transient Effects for a Novel AlGaN/GaN High Electron-Mobility Transistor with a P-GaN Buried Layer and a Locally Doped Barrier Layer. [PDF]

Micromachines (Basel)
Xiong J, Xie X, Wei J, Sun S, Luo X.
europepmc   +1 more source