Results 171 to 180 of about 7,826 (220)

Two‐dimensional numerical analysis for high electron mobility transistors (HEMTs)

Electronics and Communications in Japan (Part II: Electronics), 1985
AbstractA two‐dimensional numerical model has been developed for the analysis of operation of a high electron mobility transistor (HEMT) based on the AlGaAs/GaAs heterojunction. In this model, the basic equations are formulated under the assumption that the band structure is continuous and Boltzmann statistics are applicable.
Jiro Yoshida, Mamoru Kurata
openaire   +1 more source

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

IEEE Electron Device Letters, 2002
A novel p-capped GaN-AlGaN-GaN high-electron mobility transistor has been developed to minimize radio-frequency-to-dc (RF-DC) dispersion before passivation. The novel device uses a p-GaN cap layer to screen the channel from surface potential fluctuations. A low-power reactive ion etching gate recess combined with angle evaporation of the gate metal has
Coffie, R., Buttari, D., Heikman, S., Keller, S., CHINI, Alessandro, Shen, L., Mishra, U. K.   +6 more
openaire   +2 more sources

Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)

2017 Devices for Integrated Circuit (DevIC), 2017
In this paper the, Antimonide-based HEMTs have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.1 In 0.9 Sb barrier and back-barriers. These HEMTs with 50 nm gate length exhibit improved electron density, mobility, DC and analog/RF performances.
M. Sheerin Begum, J. Vijayashree, A. Mohanbabu, N. Mohankumar   +3 more
openaire   +1 more source

A DC model for the high electron mobility transistor (HEMT)

[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, 2002
A novel analytical HEMT model is developed. The conduction mechanism due to the 2-DEG (two-dimensional electron gas) and the parallel AlGaAs is included. The numerical calculations of n/sub s/ and n/sub t/ were fitted to two closed-form analytical expressions that are easily integrable along the channel and are smooth to avert any discontinuity in the ...
M. Saleh, M. El-Nokali
openaire   +1 more source

Biological detection by high electron mobility transistor (HEMT) based AlGaN/GaN

physica status solidi c, 2014
AbstractMaterials based on gallium nitride are characterized by a wide bandgap. The excellent chemical, physical and electronic properties give them a place in various fields: electronics, optoelectronics, photovoltaics, military, biological and medical.
Oussama Zeggai, Amaria Ould‐Abbas, Mama Bouchaour, Hichem Zeggai, Nordine Sahouane, Malika Madani, Djamel Trari, Meriem Boukais, N.‐E. Chabane‐Sari   +8 more
openaire   +1 more source

Monitoring glycolytic oscillations using AlGaN/GaN high electron mobility transistors (HEMTs)

Sensors and Actuators B: Chemical, 2010
Abstract Glycolytic oscillations in cell extracts from aerobically grown yeast Saccharomyces carlsbergensis were recorded simultaneously via source drain currents of high electron mobility transistors (HEMTs) based on AlGaN/GaN heterostructures and by the fluorescence of NADH molecules.
C. Warnke, H. Witte, T. Mair, M.J.B. Hauser, A. Dadgar, A. Krost   +5 more
openaire   +1 more source

Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs)

IEEE Transactions on Nuclear Science, 2002
Time-resolved charge-collection measurements are performed on InAlAs/InGaAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET ...
D. McMorrow, J.B. Boos, null Doe Park, S. Buchner, A.R. Knudson, J.S. Melinger   +5 more
openaire   +1 more source

High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications

physica status solidi (a), 2001
High-electron-mobility transistors (HEMTs) based on AlGaN/GaN heterostructures were successfully tested as chemically sensing devices. Exposing the unprotected polar GaN surface in the gate area of a HEMT to liquids of different polarity, milliampere changes in the source-drain current could be detected.
R. Neuberger, G. M�ller, O. Ambacher, M. Stutzmann   +3 more
openaire   +1 more source

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

2015
Abstract : The purpose of this report is to investigate the low temperature Photoluminescence (PL) from High Electron Mobility Transistor (HEMT) structures that have been modified by proton irradiation. The samples are aluminum gallium nitride (AlGaN)/gallium nitride (GaN) and indium aluminum nitride (InAlN)/GaN HEMT structures.
Henry O. Everitt, Adam T. Roberts
openaire   +1 more source

Channel noise in InGaAs/InP composite channel high electron mobility transistors (HEMTs)

2008 20th International Conference on Indium Phosphide and Related Materials, 2008
High frequency channel noise in InP HEMTs with an InGaAs/InP composite channel has been characterized and analyzed to gain a better understanding on the high frequency noise originating from a more complicated channel structure. The channel noise in the composite channel HEMT shows different drain voltage dependence as compared to the conventional HEMT
Hong Wang, Yuwei Liu
openaire   +1 more source