Results 171 to 180 of about 2,847 (219)
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A DC model for the high electron mobility transistor (HEMT)
[1991] Proceedings of the 34th Midwest Symposium on Circuits and Systems, 2002A novel analytical HEMT model is developed. The conduction mechanism due to the 2-DEG (two-dimensional electron gas) and the parallel AlGaAs is included. The numerical calculations of n/sub s/ and n/sub t/ were fitted to two closed-form analytical expressions that are easily integrable along the channel and are smooth to avert any discontinuity in the ...
M. Saleh, M. El-Nokali
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High-frequency admittance of high-electron-mobility transistors (HEMTs)
Solid-State Electronics, 1983Abstract By solving the wave equation of the high-electron-mobility-transistor by an approximation method, the input admittance Ygs = ggs + jωCgs of the device is evaluated. The input conductance ggs plays a role in the calculation of the minimum noise figure of the device at high frequencies.
A. van der Ziel, E.N. Wu
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Study of GaN-based double heterostructure high electron mobility transistor (DH-HEMT)
, 2018 For higher frequency operation, the device such as high electron mobility transistor (HEMT) needs to be scaled down by reducing the gate length. However, in the case of high voltage operation with reduced gate length, the high concentration of two-dimensional electron gas (2DEG) obtained in the HEMT epistructures may spill over from the quantum well to
Seah, Alex Tian Long
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Investigation of performance of InAsSb based high electron mobility transistors (HEMTs)
2017 Devices for Integrated Circuit (DevIC), 2017In this paper the, Antimonide-based HEMTs have been simulated with an In 0.1 As 0.9 Sb channel and Al 0.1 In 0.9 Sb barrier and back-barriers. These HEMTs with 50 nm gate length exhibit improved electron density, mobility, DC and analog/RF performances.
M. Sheerin Begum +3 more
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Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)
2012 International Conference on Devices, Circuits and Systems (ICDCS), 2012AlGaN/GaN HEMT is the forefront of semiconductor research because of its exciting physical properties and it is the choice of suitable candidate for high power electronic innovations. In general, the AlGaN/GaN can operate at higher voltages and these high bias conditions induce high electric field within the device structure that leads to degradation ...
S. Nandha Kumar, B. Bindu
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Analysis of quantum wire high electron mobility transistor (HEMT) structure
Solid-State Electronics, 1996Abstract An analytical model predicting the electrical characteristics of a high electron mobility transistor (HEMT) structure with a quantum well wire (QWW) channel is proposed. Electron energy levels in the quantum wire and electron wave functions inside and outside the quantum wire are computed. Analytical results on self-consistent calculation of
S.K. Islam, F.C. Jain
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Two‐dimensional numerical analysis for high electron mobility transistors (HEMTs)
Electronics and Communications in Japan (Part II: Electronics), 1985AbstractA two‐dimensional numerical model has been developed for the analysis of operation of a high electron mobility transistor (HEMT) based on the AlGaAs/GaAs heterojunction. In this model, the basic equations are formulated under the assumption that the band structure is continuous and Boltzmann statistics are applicable.
Jiro Yoshida, Mamoru Kurata
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Effect of temperature on the transconductance of AlGaN/GaN high electron mobility transistors (HEMT)
International Journal of Academic Research, 2013An analytical-numerical model for the electronic current of two dimensional quantum well AlGaN/GaN in high electron mobility transistors has been developed in this paper that is capable of accurately predicting the effect of temperature on the electronic current of two dimensional quantum well and transconductance .
Rajab Yahyazadeh +2 more
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High-Electron-Mobility AlGaN/GaN Transistors (HEMTs) for Fluid Monitoring Applications
physica status solidi (a), 2001High-electron-mobility transistors (HEMTs) based on AlGaN/GaN heterostructures were successfully tested as chemically sensing devices. Exposing the unprotected polar GaN surface in the gate area of a HEMT to liquids of different polarity, milliampere changes in the source-drain current could be detected.
R. Neuberger +3 more
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Biological detection by high electron mobility transistor (HEMT) based AlGaN/GaN
physica status solidi c, 2014AbstractMaterials based on gallium nitride are characterized by a wide bandgap. The excellent chemical, physical and electronic properties give them a place in various fields: electronics, optoelectronics, photovoltaics, military, biological and medical.
Oussama Zeggai +8 more
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