Results 191 to 200 of about 2,847 (219)

e-HEMT : an engineering model for GAN-based high electron mobility transistors

2014
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers .and high-power switching applications.
openaire   +2 more sources

Microwave noise in InP/InGaAs composite channel high electron mobility transistors (HEMTs)

2005 Asia-Pacific Microwave Conference Proceedings, 2005
In this work, the study of the microwave noise performance for InGaAs/InP composite channel HEMT compared to InGaAs channel is performed. Detailed microwave noise characteristics of InP-based HEMT are presented. An interesting observation is that the minimum noise figure (NF/sub min/) in composite channel devices is insensitive to drain bias, which is ...
null Yuwei Liu, Hong Wang, null Rong Zeng   +2 more
openaire   +1 more source

Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)

2022
Nhu Q. Tran, Loc T. P. Nguyen, Tri M. Do, Quan M. Hoang   +3 more
openaire   +1 more source

High Electron Mobility Transistors (HEMTs)

2007
Prashant Chavarkar, Umesh Mishra
openaire   +1 more source

DC CHARACTERISTIC OF HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) ON

2019
Ruthvik Sainath Meka, A. EL Fatimy
openaire   +1 more source

Fabrication of enhancement-mode high electron mobility transistors (HEMTs) by electrodeless photoelectrochemical etching

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), 2021
Weining Liu, Zicheng Yu, Xing Wei, Li Zhang, Guohao Yu, Baoshun Zhang   +5 more
openaire   +1 more source

A Comprehensive Review on High Electron Mobility Transistor (HEMT) Based Biosensors: Recent Advances and Future Prospects and its Comparison with Si-Based Biosensor

Silicon, 2021
Deepak Kumar Panda
exaly  

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica Status Solidi (A) Applications and Materials Science, 2020
Uiho Choi, Hyungtak Kim, Taemyung Kwak   +2 more
exaly  

High Electron Mobility Transistor (HEMT)

2005
openaire   +1 more source

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface

ACS Applied Materials & Interfaces, 2023
A Hospodková, František Hajek, Tomáš Hubacek   +2 more
exaly