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High Electron Mobility Transistors (HEMTs)
2007Prashant Chavarkar, Umesh Mishra
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Load-Pull Methodology to Characterize GaN High-Electron-Mobility Transistors (HEMTs)
2022Nhu Q. Tran +3 more
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Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)
2023 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD), 2023Fei Yu +4 more
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III-nitride normally-off low-density-drain high electron mobility transistors (LDD-HEMTs)
2014Since the first demonstration of the AlGaN/GaN high electron mobility transistor (HEMT) over a decade ago, there has been rapid development in wide bandgap GaN-based materials and devices. Wide bandgap AlGaN/GaN HEMTs are promising candidates for next-generation microwave power amplifiers and power electronics components (e.g.
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AlGaN/GaN high electron mobility transistor (HEMT) based sensors for gas sensing applications
2019Electronic Components, Technology and ...
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DC CHARACTERISTIC OF HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT) ON
2019Ruthvik Sainath Meka, A. EL Fatimy
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Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)
Journal of Materials ScienceS. Ravi +5 more
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IIA-8 device characteristics of short channel high electron mobility transistor (HEMT)
IEEE Transactions on Electron Devices, 1983K. Nishiuchi +5 more
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