Results 201 to 210 of about 7,826 (220)

Fabrication of enhancement-mode high electron mobility transistors (HEMTs) by electrodeless photoelectrochemical etching

2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS), 2021
Weining Liu, Zicheng Yu, Xing Wei, Li Zhang, Guohao Yu, Baoshun Zhang   +5 more
openaire   +1 more source

First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

IEEE Electron Device Letters, 2015
Kevin Leong, Stephen Sarkozy
exaly  

High Electron Mobility Transistor (HEMT)

2005
openaire   +1 more source

Ultrahigh-Speed Integrated Circuits Using InP-Based High-Electron-Mobility Transistors(HEMTs)

Extended Abstracts of the 1997 International Conference on Solid State Devices and Materials, 1997
Takatomo Enoki, Haruki Yokoyama, Yohtaro Umeda, Taiichi Otsuji   +3 more
openaire   +1 more source

Gate-Controlled Spin-Orbit Interaction in InAs High-Electron Mobility Transistor Layers Epitaxially Transferred onto Si Substrates

ACS Nano, 2013
Hochan Lee, Seongdong Lim, Hyun Cheol Koo   +2 more
exaly  

High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors

Biosensors and Bioelectronics, 2018
Indu Sarangadharan, Abiral Regmi, Jen-Inn Chyi   +2 more
exaly  

Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor

Sensors and Actuators B: Chemical, 2007
Wen-Chau Liu, Huey-Ing Chen
exaly  

SnO2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications

International Journal of Hydrogen Energy, 2012
Chi-Jung Chang, Stephen J Pearton, Fan Ren   +2 more
exaly  

Gd2O3 gate dielectric for AlGaN/GaN high electron mobility transistors (HEMTs)

2013
Z. Gao, M. F. Romero, M. A. Pampillón, E. San Andrés, S. Martín-Horcajo, T. Brazzini, F. Calle   +6 more
openaire   +1 more source

Direct Current and Radio Frequency Characterizations of AlGaN/AlN/GaN/AlN Double‐Heterostructure High‐Electron Mobility Transistor (DH‐HEMT) on Sapphire

Physica Status Solidi (A) Applications and Materials Science, 2020
Uiho Choi, Hyun-Seop Kim, Taemyung Kwak
exaly