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Development of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on diamond substrates
2012Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide bandgap devices such as gallium nitride (GaN) to include the possibility for high power and high frequency operation.
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Planar Superlattice U-GaN High Electron Mobility Transistor (HEMT)
2025 IEEE 12th Workshop on Wide Bandgap Power Devices and Applications (WiPDA)Vikram Magendar, Hiu Yung Wong
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Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)
Journal of Materials ScienceS. Ravi +5 more
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AlGaN High Electron Mobility Transistors (AlN/GaN HEMTs)
Brianna Klein +7 moreopenaire +1 more source
Comprehensive study of a Pd–GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
Sensors and Actuators B: Chemical, 2007Ching-Wen Hung +2 more
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Synthesis Lectures on Engineering Science and Technology
Amal Banerjee, Banerjee Amal
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Amal Banerjee, Banerjee Amal
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Hybrid AlGaN/GaN high‐electron mobility transistor: design and simulation
IET Circuits, Devices and Systems, 2018Sajad A Loan +2 more
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