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Gd2O3 gate dielectric for AlGaN/GaN high electron mobility transistors (HEMTs)

2013
Z. Gao   +6 more
openaire   +1 more source

IIA-8 device characteristics of short channel high electron mobility transistor (HEMT)

IEEE Transactions on Electron Devices, 1983
K. Nishiuchi   +5 more
openaire   +1 more source

High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

Applied Physics Letters, 1993
J N Kuznia, D T Olson, Asif Khan M
exaly  

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