Results 211 to 220 of about 7,826 (220)

Characteristics of a Pd–oxide–In0.49Ga0.51P high electron mobility transistor (HEMT)-based hydrogen sensor

Sensors and Actuators B: Chemical, 2006
Kun-Wei Lin, Wen-Chau Liu, Huey-Ing Chen
exaly  

An AlN/Al0.85Ga0.15N high electron mobility transistor

Applied Physics Letters, 2016
Albert Baca, Andrew Armstrong, Erica A Douglas   +2 more
exaly  

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics (Switzerland), 2019
Guo-feng Yang
exaly  

Terahertz detection by high-electron-mobility transistor: Enhancement by drain bias

Applied Physics Letters, 2001
Michael S Shur
exaly  

High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

Applied Physics Letters, 1993
exaly  

Pd-oxide- Al/sub 0.24/Ga/sub 0.76/As (MOS) high electron mobility transistor (HEMT)-based hydrogen sensor

IEEE Sensors Journal, 2006
Kun-Wei Lin, Wen-Chau Liu, Huey-Ing Chen
exaly  

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Applied Physics Letters, 2005
exaly  

Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor

Journal of Applied Physics, 1999
exaly  

AlGaN/AlN/GaN high-power microwave HEMT

IEEE Electron Device Letters, 2001
exaly  

Comparative Analysis of Machine Learning Algorithms for High Electron Mobility Transistor (HEMT) Modeling

null Neda, Vandana Nath
openaire   +1 more source