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Gd2O3 gate dielectric for AlGaN/GaN high electron mobility transistors (HEMTs)
2013Z. Gao +6 more
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IIA-8 device characteristics of short channel high electron mobility transistor (HEMT)
IEEE Transactions on Electron Devices, 1983K. Nishiuchi +5 more
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High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
Applied Physics Letters, 1993J N Kuznia, D T Olson, Asif Khan M
exaly
An accurate analytical model of the AlGaAs/GaAs high electron mobility transistor (HEMT)
Roshdy A Abdelrassoulexaly
Yüksek elektron hareketli transistör (high electron mobility transistor, HEMT) distorsiyon analizi
2009openaire +1 more source

