Results 181 to 190 of about 2,847 (219)

An accurate analytical model of the AlGaAs/GaAs high electron mobility transistor (HEMT)

Proceedings of the Eighteenth National Radio Science Conference. NRSC'2001 (IEEE Cat. No.01EX462), 2002
A new and accurate analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET is presented. This model uses a polynomial expression to model the dependence of sheet carrier concentration (n/sub 2/) in the two-dimensional electron gas on gate voltage (V/sub G/).
M.A. Yakout, R.A. AbdelRassoul, A.I. AbdelFattah, S.G. Essa   +3 more
openaire   +1 more source

Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs)

IEEE Transactions on Nuclear Science, 2002
Time-resolved charge-collection measurements are performed on InAlAs/InGaAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET ...
D. McMorrow, J.B. Boos, null Doe Park, S. Buchner, A.R. Knudson, J.S. Melinger   +5 more
openaire   +1 more source

Comparative analysis on nitride-based high electron mobility transistor (HEMT)

Physica Scripta
Abstract This paper explores a comparative analysis on different types of High Electron Mobility Transistors (HEMTs), in particular the significant role of oxide layers in enhancing the performance of metal-oxide-semiconductor (MOS)-HEMTs compared to both passivated and unpassivated HEMTs, particularly in high-frequency and low-noise ...
Jayanth Kumar Porala, Way Foong Lim
openaire   +1 more source

p-capped GaN-AlGaN-GaN high-electron mobility transistors (HEMTs)

IEEE Electron Device Letters, 2002
A novel p-capped GaN-AlGaN-GaN high-electron mobility transistor has been developed to minimize radio-frequency-to-dc (RF-DC) dispersion before passivation. The novel device uses a p-GaN cap layer to screen the channel from surface potential fluctuations. A low-power reactive ion etching gate recess combined with angle evaporation of the gate metal has
R. Coffie, D. Buttari, S. Heikman, S. Keller, A. Chini, L. Shen, U.K. Mishra   +6 more
openaire   +1 more source

Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)

International Journal of Thermal Sciences, 2013
Abstract This study describes the development of packaging for high-power AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. A transistor is attached to a V-grooved copper base, and mounted on a TO-3P lead-frame. Unlike flipchip or copper-molybdenum-copper (CMC)-based packaging technology, which is popular in the GaN HEMT ...
Stone Cheng, Po-Chien Chou
openaire   +1 more source

Low Temperature Photoluminescence (PL) from High Electron Mobility Transistors (HEMTs)

2015
Abstract : The purpose of this report is to investigate the low temperature Photoluminescence (PL) from High Electron Mobility Transistor (HEMT) structures that have been modified by proton irradiation. The samples are aluminum gallium nitride (AlGaN)/gallium nitride (GaN) and indium aluminum nitride (InAlN)/GaN HEMT structures.
Henry O. Everitt, Adam T. Roberts
openaire   +1 more source

Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004., 2004
A simple technique based on the measurement of the transient drain current is demonstrated for quickly assessing the properties of the hot-carrier-induced traps. Two different kinds of interface traps with distinctive time constants have been measured in our present devices.
null Chee-Leong Tan, Hong Wang, K. Radhakrishnan, null Wai-Chye Cheong, null Jing Bu   +4 more
openaire   +1 more source

Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP

IEEE Transactions on Electron Devices, 1998
The fabrication and characterization of high-speed enhancement-mode InAlAs/InGaAs/InP high electron mobility transistors (E-HEMTs) have been performed. The E-HEMT devices were made using a buried-Pt gate technology. Following a Pt/Ti/Pt/Au gate metal deposition, the devices were annealed in a nitrogen ambient, causing the bottom Pt layer to sink toward
A. Mahajan, M. Arafa, P. Fay, C. Caneau, I. Adesida   +4 more
openaire   +1 more source

Principle, Structure, and Applications of Gallium Nitride High Electron Mobility Transistors (HEMTs)

2023 19th International Conference on Natural Computation, Fuzzy Systems and Knowledge Discovery (ICNC-FSKD), 2023
Fei Yu, Qi-Ming Zeng, Rong Song, Jian Tang, Ya-Ting Wu   +4 more
openaire   +1 more source

Channel noise in InGaAs/InP composite channel high electron mobility transistors (HEMTs)

2008 20th International Conference on Indium Phosphide and Related Materials, 2008
High frequency channel noise in InP HEMTs with an InGaAs/InP composite channel has been characterized and analyzed to gain a better understanding on the high frequency noise originating from a more complicated channel structure. The channel noise in the composite channel HEMT shows different drain voltage dependence as compared to the conventional HEMT
Hong Wang, Yuwei Liu
openaire   +1 more source