Results 181 to 190 of about 7,826 (220)

Comparative analysis on nitride-based high electron mobility transistor (HEMT)

Physica Scripta
Abstract This paper explores a comparative analysis on different types of High Electron Mobility Transistors (HEMTs), in particular the significant role of oxide layers in enhancing the performance of metal-oxide-semiconductor (MOS)-HEMTs compared to both passivated and unpassivated HEMTs, particularly in high-frequency and low-noise ...
Jayanth Kumar Porala, Way Foong Lim
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Microwave noise in InP/InGaAs composite channel high electron mobility transistors (HEMTs)

2005 Asia-Pacific Microwave Conference Proceedings, 2005
In this work, the study of the microwave noise performance for InGaAs/InP composite channel HEMT compared to InGaAs channel is performed. Detailed microwave noise characteristics of InP-based HEMT are presented. An interesting observation is that the minimum noise figure (NF/sub min/) in composite channel devices is insensitive to drain bias, which is ...
null Yuwei Liu, Hong Wang, null Rong Zeng   +2 more
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Performance analysis of ScAlN/GaN High Electron Mobility Transistor (HEMT) for biosensing application

2020 5th International Conference on Devices, Circuits and Systems (ICDCS), 2020
In this work ScA1N film has been used to serve as a barrier in III-Nitride heterojunctions. The reduced lattice mismatch on GaN and better polarization properties of Sc x A1 1-x N makes this material a promising candidate for RF biosensing applications.
Praveen Pal, Yogesh Pratap, Mridula Gupta, Sneha Kabra, Himani Dua Sehgal   +4 more
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Enhancement-mode high electron mobility transistors (E-HEMTs) lattice-matched to InP

IEEE Transactions on Electron Devices, 1998
The fabrication and characterization of high-speed enhancement-mode InAlAs/InGaAs/InP high electron mobility transistors (E-HEMTs) have been performed. The E-HEMT devices were made using a buried-Pt gate technology. Following a Pt/Ti/Pt/Au gate metal deposition, the devices were annealed in a nitrogen ambient, causing the bottom Pt layer to sink toward
A. Mahajan, M. Arafa, P. Fay, C. Caneau, I. Adesida   +4 more
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Novel packaging design for high-power GaN-on-Si high electron mobility transistors (HEMTs)

International Journal of Thermal Sciences, 2013
Abstract This study describes the development of packaging for high-power AlGaN/GaN high electron mobility transistors (HEMTs) on a silicon substrate. A transistor is attached to a V-grooved copper base, and mounted on a TO-3P lead-frame. Unlike flipchip or copper-molybdenum-copper (CMC)-based packaging technology, which is popular in the GaN HEMT ...
Stone Cheng, Po-Chien Chou
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Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)

16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004., 2004
A simple technique based on the measurement of the transient drain current is demonstrated for quickly assessing the properties of the hot-carrier-induced traps. Two different kinds of interface traps with distinctive time constants have been measured in our present devices.
null Chee-Leong Tan, Hong Wang, K. Radhakrishnan, null Wai-Chye Cheong, null Jing Bu   +4 more
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An accurate analytical model of the AlGaAs/GaAs high electron mobility transistor (HEMT)

Proceedings of the Eighteenth National Radio Science Conference. NRSC'2001 (IEEE Cat. No.01EX462), 2002
A new and accurate analytical model for the AlGaAs/GaAs high electron mobility transistor (HEMT) or MODFET is presented. This model uses a polynomial expression to model the dependence of sheet carrier concentration (n/sub 2/) in the two-dimensional electron gas on gate voltage (V/sub G/).
M.A. Yakout, R.A. AbdelRassoul, A.I. AbdelFattah, S.G. Essa   +3 more
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Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Room-Temperature Gas Detection

ECS Meeting Abstracts, 2020
Introduction Nowadays there is an increasing demand for low power and low-cost gas sensors for a wide range of applications. With the advantages of miniaturization, low power consumption and good compatibility with the standard CMOS circuit, gas sensing field effect transistors (FETs) are the most ...
Zhixiang Hu, Jingyao Liu, Licheng Zhou, Long Li, Yunong Zhao, Hua-Yao Li, Yang Zhang, Huan Liu   +7 more
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High temperature alloyed Ag based ohmic contacts to pseudomorphic high electron mobility transistor (p-HEMT)

2008 International Conference on Recent Advances in Microwave Theory and Applications, 2008
The quality of ohmic contacts in pseudomorphic high electron mobility transistors (p-HEMTs) formed by sequential e-beam evaporation of Ni/Ge/Au/Ag/Au was investigated as a function of alloying cycles in the range from 390degC to 460degC for duration of 30 sec.
Somna S. Mahajan, Anushree Tomer, Anshu Goyal, Seema Vinayak, H. S. Sharma, B. K. Sehgal   +5 more
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e-HEMT : an engineering model for GAN-based high electron mobility transistors

2014
Gallium Nitride (GaN)-based high electron mobility transistors (HEMTs) are emerging as promising contenders to replace existing Silicon and Gallium Arsenide (GaAs) devices in the radio-frequency/microwave power amplifiers .and high-power switching applications.
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