Evaluation of a Silicon Carbide Static Induction Transistor for High Frequency/High Temperature Sensor Interface Circuits: Measurements and Modeling. [PDF]
Sensors (Basel)Grgat JR, Scardelletti MC, Zorman CA.
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Internally Harmonic Matched Compact GaN Power Amplifier with 78.5% PAE for 2.45 GHz Wireless Power Transfer Systems. [PDF]
Micromachines (Basel)Li C +5 more
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A Novel Isolation Approach for GaN-Based Power Integrated Devices. [PDF]
Micromachines (Basel)Zaidan Z +12 more
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The early history of the high electron mobility transistor (HEMT)
IEEE Transactions on Microwave Theory and Techniques, 2002The early history of the high electron mobility transistor illustrates the way in which a new device idea occurs and is developed towards commercialization. The events which took place in our laboratory are described in this paper.
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Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)
Applied Physics A, 2020In this study, a Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (ρ), Hall mobility (μ) and carrier density (n) are measured in 0.01–0.14 T magnetic field range and 25–340 K temperature range.
Bilgili, Ahmet Kuersat +3 more
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High-frequency admittance of high-electron-mobility transistors (HEMTs)
Solid-State Electronics, 1983Abstract By solving the wave equation of the high-electron-mobility-transistor by an approximation method, the input admittance Ygs = ggs + jωCgs of the device is evaluated. The input conductance ggs plays a role in the calculation of the minimum noise figure of the device at high frequencies.
A. van der Ziel, E.N. Wu
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Reliability studies of AlGaN/GaN high electron mobility transistors (HEMT)
2012 International Conference on Devices, Circuits and Systems (ICDCS), 2012AlGaN/GaN HEMT is the forefront of semiconductor research because of its exciting physical properties and it is the choice of suitable candidate for high power electronic innovations. In general, the AlGaN/GaN can operate at higher voltages and these high bias conditions induce high electric field within the device structure that leads to degradation ...
S. Nandha Kumar, B. Bindu
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Analysis of quantum wire high electron mobility transistor (HEMT) structure
Solid-State Electronics, 1996Abstract An analytical model predicting the electrical characteristics of a high electron mobility transistor (HEMT) structure with a quantum well wire (QWW) channel is proposed. Electron energy levels in the quantum wire and electron wave functions inside and outside the quantum wire are computed. Analytical results on self-consistent calculation of
S.K. Islam, F.C. Jain
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Reliability based design optimization applied to the high electron mobility transistor (HEMT)
Microelectronics Reliability, 2021Abstract Among the most important components in complex and high-power mechatronic systems is the transistor. The High Electron Mobility Transistor (HEMT) is a technology under development. This paper presents the hybrid Reliability Based Design Optimization (RBDO) method applied to the HEMT technology in order to improve its performance and ...
Abdelhamid Amar +2 more
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