Results 161 to 170 of about 2,847 (219)

Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands. [PDF]

Micromachines (Basel)
Yuan Y, Zhao X, Fan J, Yu Z.
europepmc   +1 more source

Using both faces of polar semiconductor wafers for functional devices. [PDF]

Nature
van Deurzen L, Kim E, Pieczulewski N, Zhang Z, Feduniewicz-Zmuda A, Chlipala M, Siekacz M, Muller D, Xing HG, Jena D, Turski H.   +10 more
europepmc   +1 more source

Two-dimensional buffer breaks substrate limit in III-nitrides epitaxy. [PDF]

Sci Adv
Sang Y, Xu X, Wu Y, Feng G, Zhang X, Zhuo F, Jin Z, Guo H, Tao T, Ding S, Wang X, Chen D, Ohkawa K, Xing K, Wang X, Zhuang Z, Zhang R, Alshareef HN, Liu B.   +18 more
europepmc   +1 more source

A Review of Ku-Band GaN HEMT Power Amplifiers Development. [PDF]

Micromachines (Basel)
Kim J.
europepmc   +1 more source

Semiconductor lasers and high electron mobility transistors (HEMTs) using InP-related materials

, 1996
openaire   +1 more source

Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)

Applied Physics A: Materials Science and Processing, 2020
In this study, a Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (ρ), Hall mobility (μ) and carrier density (n) are measured in 0.01–0.14 T magnetic field range and 25–340 K temperature range.
Ahmet Kursat Bilgili, Mustafa ÖZTÜRK, Suleyman Özçelik   +2 more
exaly   +4 more sources

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Reliability based design optimization applied to the high electron mobility transistor (HEMT)

Microelectronics Reliability, 2021
Abstract Among the most important components in complex and high-power mechatronic systems is the transistor. The High Electron Mobility Transistor (HEMT) is a technology under development. This paper presents the hybrid Reliability Based Design Optimization (RBDO) method applied to the HEMT technology in order to improve its performance and ...
Bouchaib Radi, Abdelkhalak El Hami
exaly   +2 more sources

The early history of the high electron mobility transistor (HEMT)

IEEE Transactions on Microwave Theory and Techniques, 2002
The early history of the high electron mobility transistor illustrates the way in which a new device idea occurs and is developed towards commercialization. The events which took place in our laboratory are described in this paper.
exaly   +2 more sources

Theoretical Study of InAlN/GaN High Electron Mobility Transistor (HEMT) with a Polarization-Graded AlGaN Back-Barrier Layer

Electronics (Switzerland), 2019
An inserted novel polarization-graded AlGaN back barrier structure is designed to enhance performances of In0.17Al0.83N/GaN high electron mobility transistor (HEMT), which is investigated by the two-dimensional drift-diffusion simulations.
Jicong Zhao, Guofeng Yang, Gu Yan
exaly   +2 more sources