Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses. [PDF]
Sci RepZhao J +7 more
europepmc +1 more source
An Improved Nonlinear Capacitance Model for GaN HEMTs Based on the Angelov Model. [PDF]
Micromachines (Basel)Miao Y, Yuan Q, Wang C, Cheng J.
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Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]
Materials (Basel)Weis M.
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AuNis modified AlGaN/GaN HEMT biosensor for reliable detection of small Rho GTPases in Jurkat T cell lysate. [PDF]
Sci RepFauzi N +6 more
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Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors. [PDF]
Micromachines (Basel)Grandpierron F +4 more
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Optimization Conditions for High-Power AlGaN/InGaN/GaN/AlGaN High-Electron-Mobility Transistor Grown on SiC Substrate. [PDF]
Materials (Basel)Kim B, Park SH.
europepmc +1 more source
GaN HEMT Oscillators with Buffers. [PDF]
Micromachines (Basel)Jang SL, Huang CY, Yang TC, Lu CT.
europepmc +1 more source
Design of Dual Continuous-Mode Class-J Power Amplifiers with Harmonic Matching Networks for X and Ku Bands. [PDF]
Micromachines (Basel)Yuan Y, Zhao X, Fan J, Yu Z.
europepmc +1 more source
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate. [PDF]
Micromachines (Basel)Wu Y +7 more
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Gallium Nitride High Electron Mobility Transistor Device with Integrated On-Chip Array Junction Temperature Monitoring Unit. [PDF]
Micromachines (Basel)Chang Y +5 more
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