High electron mobility transistor hemt

Results 111 to 120 of about 7,826 (220)

Planar dielectric resonator stabilized HEMT oscillator integrated with CPW/aperture coupled patch antenna [PDF]

A new design of an active antenna with a dielectric resonator stabilized high electron mobility transistor (HEMT) oscillator (DRO) and an aperture-coupled patch antenna is reported.
Lee, Richard Q., Simons, Rainee N.
core +1 more source

Proceedings of the Cold Electronics Workshop [PDF]

The benefits and problems of the use of cold semiconductor electronics and the research and development effort required to bring cold electronics into more widespread use were ...
Kirschman, R., Tward, E.
core +1 more source

Yüksek elektron hareketli transistör (high electron mobility transistor, HEMT) distorsiyon analizi

, 2009
HEMT is extensively used in analog, digital and wireless communication systems due to low noise and high frequency operating conditions. In this study, temperature dependent stability analysis of GaN based HEMT was performed basing on Nyquist, Root-locus, Rolletti, Linville and Stern criterions.
openaire +3 more sources

Characterisation of scandium- and iron-based GaN for high electron mobility transistors (HEMTs)

, 2018
III-nitrides have received increasing attention for high electron mobility transistors (HEMTs), due to their structural and electrical properties. The AlGaN/GaN structure shows large band offset and can generate 2D physically-confined channel at its interface.
openaire +3 more sources

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc +1 more source

A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. [PDF]