Results 111 to 120 of about 2,847 (219)

Novel Monolithic CAVET-HEMT Integration for Inverting-Switch Operation. [PDF]

ACS Omega
Tan WH, Zhao H, Farizuan M, Firdaus A, Kawarada H, Tao T, Falina S, Syamsul M.   +7 more
europepmc   +1 more source

Sensitive and wafer-scale olfactory sensory neurons. [PDF]

Microsyst Nanoeng
Zhang W, Li H, Hu Z, Guo L, Chen J, Zhang H, Mao R, Li HY, Zhang Y, Liu H.   +9 more
europepmc   +1 more source

Terahertz Antenna-Coupled Wire-Channel Field-Effect Transistors Based on AlGaN/GaN Heterostructures. [PDF]

Sensors (Basel)
Moscotin M, Jorudas J, Prystawko P, Saniuk M, Kovalevskij V, Kašalynas I.   +5 more
europepmc   +1 more source

Two-dimensional numerical simulation of Fermi-level pinning phenomena due to DX centers in AlGaAs/GaAs HEMT's [PDF]

, 1989
Mizuta, Hiroshi, K. Yamaguchi, Yamaguchi, K., Yamane, M., T. Tanoue, Tanoue, T., H. Mizuta, M. Yamane, S. Takahashi, Takahashi, S.   +9 more
core   +1 more source

DC and small-signal physical models for the AlGaAs/GaAs high electron mobility transistor

, 1991
Analytical and numerical models are developed for the microwave small-signal performance, such as transconductance, gate-to-source capacitance, current gain cut-off frequency and the optimum cut-off frequency of the AlGaAs/GaAs High Electron Mobility ...
Sarker, J. C., Purviance, J. E.
core   +1 more source

Highly Sensitive Room-Temperature Graphene-Modulated AlGaN/GaN HEMT THz Detector Architecture. [PDF]

Sensors (Basel)
Sengupta R, Sarusi G.
europepmc   +1 more source

Review of the Gate Structure for Normally Off p-GaN High-Electron-Mobility Transistors Towards High Performances. [PDF]

Materials (Basel)
Pu T, Li X, Li L, Ao JP.
europepmc   +1 more source

Growth and characterization of novel GaN high electron mobility transistor structures with enhanced two-dimensional electron gas

, 2016
Novel gallium nitride based high electron mobility transistor structures were grown using metalorganic chemical vapor deposition. Traditional GaN based HEMT structures incorporate a version of an aluminum gallium nitride / gallium nitride single ...
Simpson, Jeffrey R.
core  

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

Cryogenic, low-noise high electron mobility transistor amplifiers for the Deep Space Network

, 1993
The rapid advances recently achieved by cryogenically cooled high electron mobility transistor (HEMT) low-noise amplifiers (LNA's) in the 1- to 10-GHz range are making them extremely competitive with maser amplifiers.
Bautista, J. J.
core   +1 more source