Results 91 to 100 of about 2,847 (219)
Device Simulation of P-InAlN-Gate AlGaN/GaN High Electron Mobility Transistor
, 2020 We simulate a p-InAlN gate AlGaN/GaN high electron mobility transistor (HEM). The studied HEMT is operated at an enhancement mode (e-mode) with positive threshold voltage and low gate leakage current at high gate voltage.
Han-Tung Chang +4 more
core
300 GHz Detection Using High Electron Mobility Transistor (HEMT) as Sub-THz Detector
, 2015 In this paper, we report the detection of sub-THz (300 GHz) radiation by using High Electron Mobility Transistor (HEMT). The observation of photoresponse are measured against gate voltage.
Othman, M.A, Harrison, I.
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AIP Advances, 2019 The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals. We have investigated the angular dependence of the InP HEMT when
Isabel Harrysson Rodrigues +6 more
doaj +1 more source
Characterisation of scandium- and iron-based GaN for high electron mobility transistors (HEMTs)
, 2018 III-nitrides have received increasing attention for high electron mobility transistors (HEMTs), due to their structural and electrical properties. The AlGaN/GaN structure shows large band offset and can generate 2D physically-confined channel at its interface.
openaire +2 more sources
300 GHz detection using high electron mobility transistor (HEMT) as sub-THz detector
, 2011 In this paper, we report the detection of sub-THz (300 GHz) radiation by using High Electron Mobility Transistor (HEMT). The observation of photoresponse are measured against gate voltage.
Husna Zayadi
core
, 1995 We report novel current-voltage characteristics in an InP-based resonant-tunneling high electron mobility transistor (RTHEMT). This device incorporates a pseudomorphic InGaAs/AlAs/InAs resonant-tunneling diode into the source of a nonalloyed ohmic ...
Chen, K. J., Yamamoto, M., Maezawa, K.
core +1 more source
Mathematical Model-Based Analysis and Mitigation of GaN Switching Oscillations
IEEE AccessGaN high-electron-mobility transistor (HEMT) has superior features of wide band gap, high electron mobility and very high electric field strength due to its material advantages.
Muhammad Faizan +3 more
doaj +1 more source
Modelling and Simulation of Self Heating in GaN Based High Electron Mobility Transistors (HEMTs)
International Journal of Advanced Applied Physics Research, 2017 In this paper we present the numerical simulation and characterization of GaN based high electron mobility transistors (HEMTs) using commercial device simulation software ATLAS from Silvaco international. Device has been characterized in terms of its electrical and thermal behavior by simulating its transfer and output characteristics without self ...
openaire +1 more source
, 2012 {"references": ["S. Khandelwal, et al., \"A Physics-Based Analytical Model for 2DEG\nCharge Density in AlGaN/GaN HEMT Devices,\" IEEE Trans. Electron\nDevices, vol. 58, pp. 3622-3625, Oct. 2011.", "N. Ikeda, et al,. \"GaN Power Transistors on Si Substrates for Switching\nApplications,\" Proceedings of the IEEE, vol. 98, pp. 1151-1161, Jul.\n2010.", "J.
Li Yuan +6 more
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, 1990 Construction, function, and physical fundamentals of the high electron mobility transistor (HEMT) are shortly reviewed. It is the main feature of a semiconductor heterostructure of this type that a 2D electron gas occurs which demands a careful ...
Schnittler, Ch., Holz, G.
core