Results 91 to 100 of about 7,826 (220)

Structural and morphological studies on wet-etched InAlGaN barrier HEMT structures [PDF]

, 2012
The quaternary nitride-based high electron mobility transistor (HEMT) has been recently a focus of interest because of the possibility to grow lattice-matched barrier to GaN and tune the barrier bandgap at the same ...
Behmenburg, H., Brazzini, Tommaso, Calle Gómez, Fernando, Cavallini, Anna, Gacevic, Zarko, Giesen, C., Heuken, M., Pandey, Saurabh, Tadjer, Marko Jak   +8 more
core  

AlScN/GaN Multichannel Heterostructures Grown by Metal–Organic Chemical Vapor Deposition

Advanced Materials Interfaces, Volume 12, Issue 23, December 8, 2025.
Growth of AlScN/GaN multichannel heterostructures by metal–organic chemical vapor deposition is demonstrated for the first time. The growth of such structures is detailed through changes in growth parameters, such as the number of periods and the thickness of the channel layers, as well as structural studies.
Teresa Duarte, Isabel Streicher, Patrik Straňák, Lutz Kirste, Mario Prescher, Niklas Wolff, Susanne Beuer, Lorenz Kienle, Rüdiger Quay, Stefano Leone   +9 more
wiley   +1 more source

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines, 2019
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

AIP Advances, 2018
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT).
Xurui Mao, Sheng Xie, Changju Zhu, Zhaoxin Geng, Hongda Chen   +4 more
doaj   +1 more source

High Breakdown Voltage and Low Dynamic ON-Resistance AlGaN/GaN HEMT with Fluorine Ion Implantation in SiNx Passivation Layer

Nanoscale Research Letters, 2019
In this study, we proposed and experimentally demonstrated a high breakdown voltage (BV) and low dynamic ON-resistance (R ON, D) AlGaN/GaN high electron mobility transistor (HEMT) by implanting fluorine ions in the thick SiNx passivation layer between ...
Chao Yang, Xiaorong Luo, Tao Sun, Anbang Zhang, Dongfa Ouyang, Siyu Deng, Jie Wei, Bo Zhang   +7 more
doaj   +1 more source

Electrical spin injection and detection in an InAs quantum well

, 2006
We demonstrate fully electrical detection of spin injection in InAs quantum wells. A spin polarized current is injected from a NiFe thin film to a two-dimensional electron gas (2DEG) made of InAs based epitaxial multi-layers.
Donghwa Jung, D’yakonov M. I., D’yakonov M. I., D’yakonov M. I., D’yakonov M. I., Hyun Cheol Koo, Hyunjung Yi, Jae-Beom Ko, Jonghwa Eom, Joonyeon Chang, Seon-Gu Huh, Suk-Hee Han   +11 more
core   +1 more source

Density-Dependent Electron Transport and Precise Modeling of GaN HEMTs

, 2015
We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors.
Akyol, Fatih, Bajaj, Sanyam, Chumbes, Eduardo M., Hung, Ting-Hsiang, Khurgin, Jacob, Krishnamoorthy, Sriram, Park, Pil Sung, Rajan, Siddharth, Reza, Shahed, Shoron, Omor F.   +9 more
core   +1 more source

X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling

Electronics Letters
This paper proposes an X‐band quasi Class‐F high power amplifier (HPA) monolithic microwave integrated circuit (MMIC) using DynaFET gallium nitride (GaN) high electron mobility transistor (HEMT) modelling.
Junhyung Jeong, Kyujun Cho, Honggu Ji, Woojin Chang, Jongmin Lee, Byoung‐gue Min, Dongmin Kang   +6 more
doaj   +1 more source

Virtual prototype and GaN HEMT based high frequency LLC converter design

The Journal of Engineering, 2019
Gallium nitride (GaN) high-electron-mobility transistor (HEMT) with the merits of the fast switch speed, low on resistance and low switch loss is applicable to high-frequency LLC converters.
Long Xiao, Liang Wu, Liang Wu, Jun Zhao, Guozhu Chen   +4 more
doaj   +1 more source

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

, 2009
Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths.
A El Fatimy, A El Fatimy, A Lisauskas, A Lisauskas, A Shchepetov, Abdelouahad Fatimy, AW Min Lee, AWM Lee, BN Behnken, D Seliuta, D Veksler, Dalius Seliuta, DB Veksler, Dominique Coquillat, EA Shaner, F Teppe, F Teppe, F Teppe, Frederic Teppe, Gintaras Valusis, GR Aizin, I Kasalynas, I Kašalynas, I Khmyrova, Irmantas Kasalynas, J-Q Lu, J-Q Lu, Jerzy Łusakowski, Krzysztof Karpierz, M Dyakonov, M Sakowicz, M Sakowicz, Maciej Sakowicz, MI Dyakonov, MI Dyakonov, MI Dyakonov, Mikhail Dyakonov, N Dyakonova, Nina Dyakonova, R Tauk, S Boubanga-Tombet, T Otsuji, T Otsuji, Taiichi Otsuji, V Ryzhii, VV Popov, VV Popov, W Knap, W Knap, W Knap, W Knap, W Knap, W Stillman, Wojciech Knap, XG Peralta, Y. M. Meziani, YM Meziani   +56 more
core   +3 more sources