Results 91 to 100 of about 987 (178)

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

Advanced physical modeling approaches for high-precision TCAD simulation of GaN HEMT power devices: a review. [PDF]

Discov Nano
Zhao H, Firdaus A, Farizuan M, Tan WH, Kawarada H, Falina S, Syamsul M.   +6 more
europepmc   +1 more source

InP-based high electron mobility transistors (HEMTs)

Oyo Buturi, 2000
openaire   +1 more source

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Deep Learning to Automate Parameter Extraction and Model Fitting of Two-Dimensional Transistors. [PDF]

Research (Wash D C)
Bennett RKA, Uslu JL, Gault HF, Khan AI, Hoang L, Peña T, Neilson K, Song YS, Zhang Z, Mannix AJ, Pop E.   +10 more
europepmc   +1 more source

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis. [PDF]

ACS Omega
Qureshi B, Alharbi AG, Ayub R, Loan SA.
europepmc   +1 more source

A 6-18 GHz High-Efficiency GaN Power Amplifier Using Transistor Stacking and Reactive Matching. [PDF]

Micromachines (Basel)
Wang C, Liao X, Gong M, Xiao F, Guan H, Zhang F, Zhou D.   +6 more
europepmc   +1 more source

Advances in High-Voltage Power Electronics Using Ga₂O₃-Based HEMT: Modeling. [PDF]

Materials (Basel)
Alhasani R, Hussain H, Alkhamisah MA, Hiazaa A, Alharbi A.   +4 more
europepmc   +1 more source

Subarray programmable terahertz metasurface for optical logic and high-order amplitude modulation. [PDF]

Light Sci Appl
Wang L, Gong S, Xia C, Liu D, Cong X, Zhu A, Zeng H, Lan F, Yang Z, Otsuji T, Zhang Y.   +10 more
europepmc   +1 more source

Materials challenges in solid-state sensors for continuous monitoring of ions in water. [PDF]

Beilstein J Nanotechnol
Darestani-Farahani M, Kruse P.
europepmc   +1 more source