High electron mobility transistor hemt

Results 71 to 80 of about 987 (178)

A monolithically integrated antenna-coupled AlGaN/GaN high-electron-mobility transistor terahertz detector for coherent receiver array

Applied Physics Express
This paper presents a low-local-oscillator (LO)-power terahertz heterodyne detector chip based on AlGaN/GaN high-electron-mobility transistor (HEMT) technology, monolithically integrating an antenna-coupled HEMT mixer, an on-chip capacitor, a common ...
Boyang Xu +5 more
doaj +1 more source

A new preparation approach for high-resolution TEM analysis of electrically active defects in p-GaN HEMT devices from two orthogonal perspectives

Power Electronic Devices and Components
The characterization of crystal defects inside GaN epi layers, especially dislocations, is of major interest to further improve the performance and reliability of GaN high-electron-mobility transistor (HEMT) devices. This work presents a new approach for
Patrick Diehle +6 more
doaj +1 more source

Characterisation of scandium- and iron-based GaN for high electron mobility transistors (HEMTs)

, 2018
III-nitrides have received increasing attention for high electron mobility transistors (HEMTs), due to their structural and electrical properties. The AlGaN/GaN structure shows large band offset and can generate 2D physically-confined channel at its interface.
openaire +2 more sources

Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]

Micromachines (Basel)
Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source

High-Efficiency Sub-100 nm Gate GaN HEMTs Enabled by Two-Step SiN<sub>x</sub> Layer Etching Technique. [PDF]