Results 71 to 80 of about 2,847 (219)

Very High Channel Conductivity in Low-Defect AlN/GaN High Electron Mobility Transistor Structures

, 2008
Low defect AlN/GaN high electron mobility transistor (HEMT) structures, with very high values of electron mobility (\u3e1800 cm2/V s) and sheet charge density (\u3e3×1013 cm−2), were grown by rf plasma-assisted molecular beam epitaxy (MBE) on sapphire ...
D. C. Look, J. Xie, Hertzog, Brian, B. Hertog, Chow, P. P., Look, Dwight C., A. M. Wowchak, Cui, B., B. Cui, P. P. Chow, Xie, J., A. Osinsky, Look, David C., A. M. Dabiran, Dabiran, A. M., Osinsky, A., Hertog, B., Wowchak, A. M.   +17 more
core   +2 more sources

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor [PDF]

, 1999
A charge control model and a mobility model are developed for the Al–GaN/GaN high electron mobility transistor (HEMT) device. The model addresses issues of how piezoelectric effect and interface roughness influence device properties.
Jasprit Singh, Singh, Jasprit, Zhang, Yifei, Yifei Zhang   +3 more
core   +1 more source

Surface morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor structure

, 2008
We present surface properties of buffer films (AIN and GaN) and Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor (HEMT) structures with/without AIN interlayer grown on High Temperature (HT)AIN buffer/Al2O3 substrate and Al2O3 substrate.
Tekeli, Z., Cakmak, MEHMET, Coerekci, S., Oezbay, E., Usanmaz, D., Oezcelik, SÜLEYMAN   +5 more
core   +2 more sources

Growth and characterization of InGaAs/InAlAs/InP high-electron-mobility transistor structures towards high channel conductivity

, 1998
High-quality InGaAs/InAlAs/InP high-electron-mobility transistor (HEMT) structures with lattice-matched or pseudomorphic channels have been grown by molecular-beam epitaxy (MBE). The purpose of this work is to enhance the channel conductivity by changing
Liang JB, Wu J, Li HX,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China., Gong Q, Xu B, Jiang C, Zhou W, Wang ZG, Li HX, Liu FQ   +9 more
core  

GaN high electron mobility transistors with AlInN back barriers

, 2016
GaN based high electron mobility transistor (HEMT) structures with AlInN back barriers are designed and investigated by Self-consistent Schrodinger-Poisson numerical simulation.
He, XG, X.G. He, D.G. Zhao, P. Chen, Z.S. Liu, J. Yang, Liu, JP(刘建平), X.J. Li, Jiang, DS, J.P. Liu, D.S. Jiang, Liu, ZS, Zhang, LQ(张立群), Li, XJ, Le, LC, Yang, H(杨辉), L.C. Le, Zhu, JJ, Chen, P, H. Yang, J.J. Zhu, Zhao, DG, Yang, J, L.Q. Zhang   +23 more
core   +1 more source

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer

Micromachines, 2019
A novel AlGaN/GaN high-electron-mobility transistor (HEMT) with a high gate and a multi-recessed buffer (HGMRB) for high-energy-efficiency applications is proposed, and the mechanism of the device is investigated using technology computer aided design ...
Shunwei Zhu, Hujun Jia, Tao Li, Yibo Tong, Yuan Liang, Xingyu Wang, Tonghui Zeng, Yintang Yang   +7 more
doaj   +1 more source

Material characterization and process development for indium-arsenide / indium-gallium-antimonide channel, high electron mobility transistors for low power, high speed applications

, 2010
Efforts to push the performance of transistors for millimeter-wave and microwave applications have borne fruit through device size scaling and the use of novel material systems.
Bambery, Rohan
core  

A bistable, self-latching inverter by the monolithic integration of resonant tunnelling diode and high electron mobility transistor

, 2006
This paper reports that the structures of AlGaAs/InGaAs high electron mobility transistor (HEMT) and AlAs/GaAs resonant tunnelling diode (RTD) are epitaxially grown by molecular beam epitaxy ( MBE) in turn on a GaAs substrate.
Ma L (Ma Long), Yang FH (Yang Fu-Hua), Ma, L, Chinese Acad Sci, Inst Semicond, Engn Res Ctr Semicond Integrated Technol, Beijing 100083, Peoples R China. E-mail: malong@semi.ac.cn, Wang LC (Wang Liang-Chen), Huang YL (Huang Ying-Long), Zhang Y (Zhang Yang)   +5 more
core  

Theoretical study of terahertz active transmission line oscillator based on RTD-gated HEMT

AIP Advances, 2018
In this paper, a new kind of terahertz oscillator is presented using plasma wave excitation in a resonant tunnel diode (RTD) gated high electron mobility transistor (HEMT).
Xurui Mao, Sheng Xie, Changju Zhu, Zhaoxin Geng, Hongda Chen   +4 more
doaj   +1 more source