Results 31 to 40 of about 7,826 (220)

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +1 more source

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2022
The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo   +9 more
doaj   +1 more source

Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures [PDF]

, 1996
The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by ...
Davidow, J., Dimoulas, A., Georgakilas, A., Giapis, K. P., Halkias, G., Kornelios, N.   +5 more
core   +1 more source

AlGaN/GaN high electron mobility transistor (HEMT) reliability

, 2005
The reliability characteristics of AlGaN/GaN HEMTs are reviewed. Basic effects such as the discrepancy between DC predicted and RF measured power are addressed together with effects such as drain current and power degradation observed following RF stress. Technologies based on sapphire, SiC and Si substrates are considered.
Pavlidis, Dimitris, Valizadeh, Pouya, Hsu, S. H.   +2 more
openaire   +2 more sources

Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

International Journal for Simulation and Multidisciplinary Design Optimization, 2022
The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid, Radi Bouchaïb, El Hami Abdelkhalak   +2 more
doaj   +1 more source

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors [PDF]

, 2015
We report on the observation of a radiation helicity sensitive photocurrent excited by terahertz (THz) radiation in dual-grating-gate (DGG) InAlAs/InGaAs/InAlAs/InP high electron mobility transistors (HEMT).
Coquillat D., Ganichev S. D., Knap W., L. Schell, P. Faltermeier, P. Olbrich, S. A. Boubanga-Tombet, S. D. Ganichev, Saleh B. E. A., T. Otsuji, T. Watanabe, W. Probst   +11 more
core   +2 more sources

A cryogenic amplifier for fast real-time detection of single-electron tunneling

, 2007
We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz.
Nooitgedagt, T., Schouten, R. N., Vandersypen, L. M. K., Vink, I. T., Wegscheider, W.   +4 more
core   +2 more sources

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling

International Journal of Electrical and Electronic Engineering & Telecommunications, 2023
This paper aims to enhance the performance of the High Electron Mobility Transistor (HEMT) according to downscaling dimensions based on the electrical properties and semiconductor materials (GaN, Si3N4, ALGaN and Si). This is to solve difficulties with reducing dimensions and ensuring HEMT has the highest performance possible.
Abdul-kadir, Firas Natheer, Jamil, Nawfal Y., Al Taan, Laith M., Abdullah, Waheb   +3 more
openaire   +1 more source

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
doaj   +1 more source