Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
Results in Physics, 2023 In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen +4 more
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A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
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Multi-objective optimization of the high electron mobility transistor
International Journal for Simulation and Multidisciplinary Design Optimization, 2023 In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid +3 more
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Impact of Gamma Radiation on Dynamic RDSON Characteristics in AlGaN/GaN Power HEMTs [PDF]
, 2019 GaN high-electron-mobility transistors (HEMTs) are promising next-generation devices in the power electronics field which can coexist with silicon semiconductors, mainly in some radiation-intensive environments, such as power space converters, where high
Martín Holgado, Pedro +3 more
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AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
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AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
MacFarlane, D., Taking, S., Wasige, E.
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Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs
AIP Advances, 2020 In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin +9 more
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A SiGe HEMT Mixer IC with Low Conversion Loss [PDF]
, 2003 The authors present the first SiGe HEMT mixer integrated circuit. The active mixer stage, operating up to 10GHz RF, has been designed and realized using a 0.1µ µµ µm gate length transistor technology.
Abele, P. +7 more
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Accuracy Improvement of the Large-Signal Model of a High-Power GaN HEMT using Power-Dependent Constant and Tapered Thermal Resistance Methods [PDF]
Journal of Electromagnetic Engineering and ScienceThis study improved the accuracy of the large-signal model of a high-power gallium nitride (GaN) high electron mobility transistor (HEMT) by using power-dependent constant and tapered thermal resistance methods.
Ho-Sang Kwon, Dong-Wook Kim
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Tunable plasma wave resonant detection of optical beating in high electron mobility transistor [PDF]
, 2006 We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor.
Akwoue-Ondo, A. +6 more
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