Results 21 to 30 of about 2,847 (219)

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Electronics Letters, 2021
A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, Holger Kalisch, Andrei Vescan, Renato Negra   +7 more
doaj   +1 more source

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in Physics, 2023
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu   +4 more
doaj   +1 more source

Enhancement Performance of High Electron Mobility Transistor (HEMT) Based on Dimensions Downscaling

International Journal of Electrical and Electronic Engineering & Telecommunications, 2023
This paper aims to enhance the performance of the High Electron Mobility Transistor (HEMT) according to downscaling dimensions based on the electrical properties and semiconductor materials (GaN, Si3N4, ALGaN and Si). This is to solve difficulties with reducing dimensions and ensuring HEMT has the highest performance possible.
Abdul-kadir, Firas Natheer, Jamil, Nawfal Y., Al Taan, Laith M., Abdullah, Waheb   +3 more
openaire   +1 more source

Fabrication and characteristics of flexible normally-off AlGaN/GaN HEMTs

AIP Advances, 2020
In this paper, we present a method for removing a high electron mobility transistor (HEMT) silicon substrate using mechanical grinding and deep silicon etching technology and successfully transferred the epitaxial wafer to a PET substrate to achieve the ...
Runze Lin, Desheng Zhao, Guohao Yu, Xiaoyan Liu, Dongdong Wu, Erdan Gu, Xugao Cui, Ran Liu, Baoshun Zhang, Pengfei Tian   +9 more
doaj   +1 more source

Accuracy Improvement of the Large-Signal Model of a High-Power GaN HEMT using Power-Dependent Constant and Tapered Thermal Resistance Methods [PDF]

Journal of Electromagnetic Engineering and Science
This study improved the accuracy of the large-signal model of a high-power gallium nitride (GaN) high electron mobility transistor (HEMT) by using power-dependent constant and tapered thermal resistance methods.
Ho-Sang Kwon, Dong-Wook Kim
doaj   +1 more source

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +1 more source

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2022
The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is ...
Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo   +9 more
doaj   +1 more source

Contact Modeling and Analysis of InAs HEMT Transistors

, 2011
Novel device concepts and better channel materials than Si are required to improve the performance of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs).
Povolotskyi, Michael, Park, Seung Hyun, M. Povolotsky, Park, Hong Hyun, Hong-Hyun Park, Park, Hong-Hyun, G. Klimeck, T. Kubis, Kubis, Tillmann, Seung Hyun Park, Steiger, Sebastian, S. Steiger, Klimeck, Gerhard, Salmani-Jelodar, Mehdi, M. Salmani-Jelodar   +14 more
core   +2 more sources

Design and Optimization on a Novel High-Performance Ultra-Thin Barrier AlGaN/GaN Power HEMT With Local Charge Compensation Trench

Applied Sciences, 2019
In this paper, a novel, GaN-based high electron mobility transistor (HEMT) using an ultra-thin barrier (UTB) with a local charge compensation trench (LCCT) is designed and optimized.
Zeheng Wang, Zhenwei Zhang, Shengji Wang, Chao Chen, Zirui Wang, Yuanzhe Yao   +5 more
doaj   +1 more source

Temperature-dependent characteristics for the p-type CuO gate HEMT and high-k HfO2 MIS-HEMT on the Si substrates

AIP Advances, 2021
This work presents the temperature-dependent characteristics of the thin-barrier Al0.45Ga0.55N/GaN high electron mobility transistor (HEMT), p-type CuO gate HEMT, and high-k HfO2 metal–insulator–semiconductor HEMT (MIS-HEMT).
Yaopeng Zhao, Chong Wang, Xuefeng Zheng, Yunlong He, Xiaohua Ma, Kai Liu, Ang Li, Yue Hao   +7 more
doaj   +1 more source