Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]
, 2011 We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D. +6 more
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A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]
, 2014 A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah +7 more
core +1 more source
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]
, 2013 Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
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Effective electrothermal analysis of electronic devices and systems with parameterized macromodeling [PDF]
, 2015 We propose a parameterized macromodeling methodology to effectively and accurately carry out dynamic electrothermal (ET) simulations of electronic components and systems, while taking into account the influence of key design parameters on the system ...
d'Alessandro, Vincenzo +6 more
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Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
, 2014 Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Caesar, Markus +6 more
core +3 more sources
A Novel Bidirectional AlGaN/GaN ESD Protection Diode
Micromachines, 2022 Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs.
Bin Yao +11 more
doaj +1 more source
Efficiency analysis of wide band-gap semiconductors for two-level and three-level power converters [PDF]
, 2019 © 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes,creating new ...
Collado Escolano, Alfonso +4 more
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Novel TCAD oriented definition of the off-state breakdown voltage in Schottky-gate FETs: a 4H SiC MESFET case study [PDF]
, 2008 Physics-based breakdown voltage optimization in Schottky-barrier power RF and microwave field-effect transistors as well as in high-speed power-switching diodes is today an important topic in technology computer-aided design (TCAD).
Bonani, Fabrizio +2 more
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IEEE AccessGaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan +4 more
doaj +1 more source
Review on the degradation of GaN-based lateral power transistors
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2021 Several mechanisms may contribute to the degradation of GaN transistors; in this paper we discuss the main processes that limit the lifetime of GaN power devices, with focus on the following relevant aspects: (i) the degradation/breakdown induced by off ...
C. De Santi +19 more
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