Results 41 to 50 of about 29,855,390 (205)

Gate-Bias Induced R_ON Instability in p-GaN Power HEMTs

IEEE Electron Device Letters, 2023
In this letter, we investigate the on-resistance ( RON ) instability in p-GaN power HEMTs induced by a positive or negative gate bias ( VGB ), following the application of a quasi-static initialization voltage ( VGP ) of opposite sign. The transient behavior of this instability was characterized at different temperatures in the 90–135 °C range.
Chini, Alessandro, Zagni, Nicolo', Verzellesi, Giovanni, Cioni, Marcello, Giorgino, Giovanni, Nicotra, Maria Concetta, Castagna, Maria Eloisa, Iucolano, Ferdinando   +7 more
openaire   +2 more sources

AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]

, 2011
Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al₂O₃ as a gate dielectric and surface
Wasige, E., S. Taking, E. Wasige, D. MacFarlane, MacFarlane, D., Taking, S.   +5 more
core   +1 more source

Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs

, 2022
Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin, Frederic Morancho, Chaymaa Haloui, Morancho, Frédéric, Daniel Rouly, Austin, Patrick, Karine Isoird, Josiane Tasselli, Rouly, Daniel, Tasselli, Josiane, Haloui, Chaymaa, Isoird, Karine   +11 more
core   +1 more source

Resonant driving scheme for p-doped gallium nitride high electron mobility transistor to reduce driving power loss

Energy Reports, 2023
In high-frequency power electronics applications, gallium nitride high electron mobility transistors (GaN HEMTs) can switch at frequencies of several megahertz.
Zhixuan Wang, Xiangdong Sun, Biying Ren, Zechi Chen   +3 more
doaj   +1 more source

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

IEEE Journal of the Electron Devices Society, 2019
The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien   +6 more
doaj   +1 more source

Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs [PDF]

, 2022
In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state.
Alessandrino, Mario Santi, Iucolano, Ferdinando, Roccaforte, Fabrizio, Bottari, Cettina, Giannazzo, Filippo, Fiorenza, Patrick, Greco, Giuseppe, Moschetti, Maurizio, Bongiorno, Corrado, Fiorenza P., Bongiorno C., Alessandrino M. S., Moschetti M., Bottari C., Iucolano F., Greco G., Roccaforte F., Giannazzo F.   +17 more
core   +1 more source

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Energies, 2021
In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress.
Surya Elangovan, Edward Yi Chang, Stone Cheng   +2 more
doaj   +1 more source

Developing of normally-off p-GaN gate HEMT

Journal of Physics: Conference Series, 2019
Abstract In this paper, the high electron mobility transistor (HEMT) with p-GaN gate is developed. The article demonstrates development of normally-off p-GaN gate HEMT on heterostructure with AlN stop layer for p-GaN selective etching and formation of normally-on GaN HEMT on the same wafer.
O B Kukhtyaeva, V I Egorkin, V E Zemlyakov, V V Kapaev, A A Zaitsev, A F Tsatsulnikov, A E Nikolaev, A V Sakharov   +7 more
openaire   +1 more source

Role of the AlGaN barrier on the long-term gate reliability of power HEMTs with p-GaN gate [PDF]

, 2020
Forward gate constant voltage stress (CVS) has been performed on GaN-on-Si (200 mm) HEMTs with p-GaN gate, controlled by a Schottky metal-retracted/p-GaN junction, processed by imec with different gate process splits.
Sangiorgi, E., Sangiorgi, E, Posthuma, Niels, Fiegna, C, Tallarico, A. N., Posthuma, N. E., Decoutere, S., Fiegna, C., Tallarico, Andrea, Bakeroot, Benoit, Decoutere, Stefaan, Decoutere S., Posthuma N. E., Sangiorgi E., Bakeroot B., Tallarico A. N., Fiegna C., A.N. Tallarico, N.E. Posthuma, E. Sangiorgi, B. Bakeroot, S. Decoutere, C. Fiegna   +22 more
core   +2 more sources

Investigation on Single and Split Output Gate Configurations Influence on the GaN-HEMTs Switching Behaviours [PDF]

, 2023
This work investigates the power GaN-HEMTs switching behaviour differences resulted from usage of two gate driving configurations: single and split outputs. The analysis based on simulation and experimental results show that GaN-HEMTs could switch slower
Marsic, Vlad, Videt, Arnaud, Idir, Nadir, Faramehr, Soroush, Lu, Xuyang, Marsic, Vlad; id_orcid, Igic, Petar   +6 more
core   +1 more source