Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor
Micromachines, 2022 This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco.
Chia-Hao Liu +9 more
doaj +1 more source
Localization of off-stress-induced damage in AlGaN/GaN high electron mobility transistors by means of low frequency 1/f noise measurements [PDF]
, 2013 The location of the time dependent degradation in OFF-state stressed AlGaN/GaN high electron mobility transistors is studied using low frequency 1/f noise measurements, with additional electroluminescence analysis.
Denis Marcon +5 more
core +3 more sources
Gate Leakage Suppression and Breakdown Voltage Enhancement in p-GaN HEMTs Using Metal/Graphene Gates [PDF]
IEEE Transactions on Electron Devices, 2020 In this work, single-layer intrinsic and fluorinated graphene were investigated as gate insertion layers in normally-OFF p-GaN gate HEMTs, which wraps around the bottom of the gate forming Ti/graphene/p-GaN at the bottom and Ti/graphene/ SiNx on the two sides.
Zhou, Guangnan +7 more
openaire +2 more sources
Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting
ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao +12 more
wiley +1 more source
Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks [PDF]
, 2017 In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm.
Cho, Sung-Jin +9 more
core +1 more source
IEEE AccessIndustries including energy production, automotive and aerospace has seen a tremendous increase in interest in high temperature electronics. There has been a lot of investigations done on wide bandgap materials because of the difficulties traditional ...
J. Ajayan +4 more
doaj +1 more source
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
Micromachines, 2023 In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv +11 more
doaj +1 more source
Electrical and thermal failure modes of 600 V p-gate GaN HEMTs [PDF]
, 2017 A study of electrical and thermal failure modes of 600 V p-doped GaN HEMTs is presented, which focuses on the investigation of short-circuit limitations.
Abbate +14 more
core +2 more sources
Normally-off p-GaN gate InAlN/GaN HEMTs grown on silicon substrates [PDF]
Gallium Nitride Materials and Devices XIV, 2019 A normally-off InAlN/GaN high electron mobility transistor (HEMT) on Si substrate with a p-GaN gate is reported. Devices are fabricated on two different epitaxial structures, one containing a high resistive GaN buffer layer and one containing an AlGaN back-barrier, and the threshold voltage, drain current density, and buffer leakage current are ...
Gulseren, Melisa Ekin +7 more
openaire +3 more sources
XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates
Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim +6 more
wiley +1 more source