Results 51 to 60 of about 29,855,390 (205)
Gallium Nitride Semiconductor Resonant Tunneling Transistor. [PDF]
Adv Sci (Weinh)Three‐terminal GaN semiconductor resonant tunneling transistors (RTTs), which comprise an double‐barrier AlN/GaN/AlN resonant tunneling diode integrated with a GaN high‐electron‐mobility transistor (HEMT) through epitaxial growth in series and parallel configuraions, respectively.
Liu F +15 more
europepmc +2 more sources
A review on the GaN-on-Si power electronic devices
Fundamental Research, 2022 The past decades have witnessed a tremendous development of GaN-based power electronic devices grown on Si substrate. This article provides a concise introduction, review, and outlook of the research developments of GaN-on-Si power device technology. The
Yaozong Zhong +7 more
doaj +1 more source
Schottky Gate Induced Threshold Voltage Instabilities in p-GaN Gate AlGaN/GaN HEMTs
, 2021 We present detailed ON-state gate current characterization of Schottky gate p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs) on two distinct gate processes.
Stockman, Arno +17 more
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A Novel Bidirectional AlGaN/GaN ESD Protection Diode
Micromachines, 2022 Despite the superior working properties, GaN-based HEMTs and systems are still confronted with the threat of a transient ESD event, especially for the vulnerable gate structure of the p-GaN or MOS HEMTs.
Bin Yao +11 more
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IEEE AccessGaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan +4 more
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Advances and emerging trends in GaN-based logic technologies [PDF]
APL Electronic DevicesGallium nitride (GaN) technology has expanded beyond its established roles in high-power and high-frequency switching to become a credible platform for monolithic logic and smart power integrated circuits.
Zhen-Hong Huang, Tian-Li Wu
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Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]
, 2016 This paper reports on an extensive investigation of the gate stability of GaN-based High Electron Mobility Transistors with p-type gate submitted to forward gate stress.
Niels Posthuma +21 more
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Advanced Materials, Volume 38, Issue 62, 6 November 2026.Intrinsic material dynamics are harnessed as computational resources for neuromorphic in‐materio physical reservoir computing. Defects, ionic motion, interfaces, percolation, geometry, and biasing shape transient states that provide fading memory, nonlinearity, and high‐dimensional projection for simple readout. A descriptor‐to‐dynamics framework links
Kshitij RB Singh +5 more
wiley +1 more source
Pulsed operation and performance of commercial GaN HEMTs [PDF]
, 2009 The present study investigates the behaviour and performance of commercially available GaN HEMTs provided by Cree Inc. The gain and power variations at pulse repetition frequencies (PRFs) in the range 100–400 kHz are presented.
Morris, KA, Beach, MA, Fornetti, F
core
Review on the degradation of GaN-based lateral power transistors
e-Prime: Advances in Electrical Engineering, Electronics and Energy, 2021 Several mechanisms may contribute to the degradation of GaN transistors; in this paper we discuss the main processes that limit the lifetime of GaN power devices, with focus on the following relevant aspects: (i) the degradation/breakdown induced by off ...
C. De Santi +19 more
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