Results 71 to 80 of about 4,002 (212)

Demonstration of p-GaN/AlGaN/GaN High Electron Mobility Transistors With an Indium–Tin–Oxide Gate Electrode

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) with indium–tin–oxide (ITO) gate electrodes are demonstrated. The DC measurements for the devices show a drain current ( $\text{I}_{\mathrm{ D}}$ ) of 438 mA/mm at a
Chih-Yao Chang, Chien-Sheng Wang, Ching-Yao Wang, Yao-Luen Shen, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

GaN-based HEMTs on Low Resistivity Silicon Technology for Microwave Applications [PDF]

, 2016
This paper investigates the effect of insertion AlN spacer between the GaN channel and buffer in a sub-micron gate (0.3 μm) AlGaN/GaN HEMTs on a low-resistivity (LR) (σ < 10 Ω.cm) silicon substrates on RF performance.
Eblabla, Abdalla, Elgaid, Khaled, Guiney, Ivor, Li, Xu, Wallis, David J.   +4 more
core  

Wide-field Magnetic Field and Temperature Imaging using Nanoscale Quantum Sensors

, 2019
The simultaneous imaging of magnetic fields and temperature (MT) is important in a range of applications, including studies of carrier transport, solid-state material dynamics, and semiconductor device characterization.
Bagnall, Kevin R., Englund, Dirk R., Foy, Christopher, Trusheim, Matthew E., Walsh, Michael, Wang, Evelyn N., Zhang, Lenan   +6 more
core   +1 more source

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Analysis and Design of a DC‐to‐24 GHz Compact High‐Speed Inductor‐less SPDT Switch

Electronics Letters, Volume 62, Issue 1, January/December 2026.
ABSTRACT A compact DC‐to‐24 GHz single‐pole, double‐throw switch with enhanced isolation, low insertion loss and high‐speed performance, by adopting a multiple series‐shunt structure, has been presented in this letter. The mechanism of multiple series‐shunt structures of the switch on isolation and insertion loss are analysed. To verify the feasibility,
Jiashu Guo, Ding He, Peng Wu, Zhongjun Yu   +3 more
wiley   +1 more source

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines, 2023
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported.
Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin   +4 more
doaj   +1 more source

Off-state breakdown characteristics of AlGaN/GaN MIS-HEMTs for switching power applications [PDF]

, 2015
A consistent description of breakdown characteristics in ohmic-to-ohmic, ohmic-to-substrate and HEMT structures has been achieved by means of device simulations for a depletion-mode AlGaN/GaN MIS-HEMT technology on Si substrate suited for power switching
Curatola, Gilberto, Daumiller, Ingo, Haeberlen, Oliver, Huber, Martin, VERZELLESI, Giovanni   +4 more
core   +1 more source

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +2 more sources

Design of a Highly Efficient and Wideband Power Amplifier With a New Microstrip Low‐Pass Filter

International Journal of RF and Microwave Computer-Aided Engineering, Volume 2026, Issue 1, 2026.
In this letter, a highly efficient and wideband power amplifier (PA) is proposed based on resistive–resistive series of continuous modes (Res‐Res SCMS) with a new microstrip low‐pass filter (LPF). By employing a conventional real‐to‐real impedance transformer, the output and input matching networks are realized by incorporating the transistor′s ...
Minshi Jia, Yaxing Liu, Zhigang Zhou, Tiansong Deng, Xiaomei Zhao, Xiao Wang, Haoming Yan, Vicente E. Boria   +7 more
wiley   +1 more source

On the Static Performance of Commercial GaN-on-Si Devices at Elevated Temperatures [PDF]

, 2018
This work provides an experimentally driven comparison between commercialized Gallium Nitride on Silicon (GaN-on-Si) and Silicon (Si) Super Junction (S-J) power devices at elevated temperatures.
Arvanitopoulos, Anastasios, Gyftakis, Konstantinos N., Lophitis, Neo, Perkins, Samuel   +3 more
core   +1 more source