Results 71 to 80 of about 29,855,390 (205)

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, Volume 3, Issue 3, Page 233-267, September 2026.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

, 2020
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully ...
Zhang, Yuhao, Yuhao Zhang, Zhang, Ruizhe, Liu, Jingcun, Ruizhe Zhang, Jingcun Liu, Kozak, Joseph P., Joseph P. Kozak, Ming Xiao, Xiao, Ming   +9 more
core   +1 more source

Wide‐Bandgap Semiconductor‐Based Neuromorphic Computing

Information &Functional Materials, Volume 3, Issue 2, Page 66-100, June 2026.
Wide‐bandgap semiconductors enable robust, low‐power neuromorphic devices for extreme environments. This review outlines material advantages, device physics, integration, and future directions for next‐generation brain‐inspired computing. ABSTRACT Neuromorphic computing has emerged as a promising paradigm to overcome the energy inefficiency and data ...
Hongyu Tang, Pengsheng Min, Yang Zhang, Qingchun Zhang, Wanlu Zhang, Ruiqian Guo, Guoqi Zhang   +6 more
wiley   +1 more source

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

, 2019
In this study, we propose a technique to evaluate the transient threshold voltage behavior of p-GaN capped AlGaN/GaN high-electron-mobility transistors (HEMTs).
Stockman, Arno, Benoit Bakeroot, Peter Moens, Meneghini, Matteo, Matteo Meneghini, Bakeroot B., Meneghini M., Eleonora Canato, Canato, Eleonora, Moens, Peter, Meneghesso G., Canato E., Meneghesso, Gaudenzio, Stockman A., Moens P., Arno Stockman, Bakeroot, Benoit, Gaudenzio Meneghesso   +17 more
core   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Low Insertion‐Loss High Power X‐Band SPDT Transmit/Receive Switches in 250 nm GaN HEMT

Microwave and Optical Technology Letters, Volume 68, Issue 6, June 2026.
ABSTRACT We present three X‐band transmit/receive (T/R) switches utilizing single‐pole double‐throw (SPDT) structures in 250 nm GaN HEMT technology. The first T/R switch was designed to achieve low insertion loss by constructing the SPDT structure with a series λ/4 transmission line (T‐line) and meticulously selected two HEMT switches in parallel for ...
Tae‐Hoon Kim, Mun‐Kyo Lee, Soonyoung Hong, Jung‐Dong Park   +3 more
wiley   +1 more source

Design of GaN tri-gate HEMTs

, 2022
S.105-108The operation of GaN tri-gate HEMTs is investigated by numerical device simulations. It is shown that the threshold voltage of such structures strongly depends on the width of the AlGaN/GaN body and to a lesser extent on the body height.
Granzner, R., Alsharef, M., Quay, Rüdiger, Schwierz, F., Racko, J., Ture, Erdin, Breza, J.   +6 more
core   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

p-GaN/AlGaN/GaN Enhancement-Mode HEMTs

, 2006
GaN-based enhancement-mode (E-mode) HEMTs are attracting significant interest for integration of control circuitry and for the added safety of a normally-off device in power switching applications.
C. S. SHU, Y. FU, C. POBLENZ, J. Speck, CHINI, Alessandro, J. S. SPECK, U. K. MISHRA, A. Chini, C. Suh, U. Mishra   +9 more
core   +1 more source

Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs

, 2019
We investigated the threshold voltage (V TH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the V TH first positively shifted and then decreased.
Li, Baikui, Nguyen, Nam Trung, Dimitrijev, Sima, Han, Jisheng, Wang, Jiannong, Li, Hui, Moghadam, Hamid Amini, Zhang, Zhaofu, Nam-Trung, Nguyen, Amini Moghadam, Hamid, https://orcid.org/, Tang, Xi   +11 more
core   +2 more sources