Results 81 to 90 of about 29,855,390 (205)

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT

Micromachines, 2021
The influence of the repair process on the electrical properties of the normally off p-GaN high-electron-mobility transistor (HEMT) is studied in detail in this paper.
Di Niu, Quan Wang, Wei Li, Changxi Chen, Jiankai Xu, Lijuan Jiang, Chun Feng, Hongling Xiao, Qian Wang, Xiangang Xu, Xiaoliang Wang   +10 more
doaj   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

650-V GaN-based MIS-HEMTs using LPCVD-SiNx as passivation and gate dielectric

, 2015
In this work, silicon nitride (SiNx) film deposited at 780 °C by low pressure chemical vapor deposition (LPCVD) was employed as the passivation layer and gate dielectric for GaN-based MIS-HEMTs.
Zhihua Dong, Yang, Shu, Mengyuan Hua, Cai, Yong, Liu, Shenghou, Fu, Kai, Baoshun Zhang, Hua, Mengyuan, Zhang, Baoshun, Yunyou Lu, Shenghou Liu, Kevin J. Chen, Yong Cai, Chen, Kevin J., Cheng Liu, Lu, Yunyou, Liu, Cheng, Dong, Zhihua, Shu Yang, Kai Fu   +19 more
core   +1 more source

Performance of tri-gate AlGaN/GaN HEMTs

, 2022
S.176-179The performance of the GaN-based tri-gate HEMT is investigated by 3D numerical simulations. The tri-gate concept is shown to provide normally-off operation and to effectively suppress short-channel effects (SCEs).
Granzner, R., Alsharef, M., Quay, Rüdiger, Ambacher, Oliver, Schwierz, F., Ture, Erdin   +5 more
core   +1 more source

Kilo‐Volt Class Al0.65Ga0.35N Channel Metal Insulator Semiconductor HEMTs With >300MW/cm2 Baliga Figure of Merit on Sapphire Substrate

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 5, May 2026.
Passivated Al‐rich AlGaN channel metal insulator semiconductor HEMTs on sapphire demonstrate breakdown voltages exceeding 2 kV with average electric fields above 1.3 MV/cm. A peak Baliga figure of merit of 325 MW/cm2 is achieved, representing a significant improvement over prior reports.
Khush Gohel, Swarnav Mukhopadhyay, Md Tahmidul Alam, Jiahao Chen, Surjava Sanyal, Ruixin Bai, Guangying Wang, Shubhra Pasayat, Chirag Gupta   +8 more
wiley   +1 more source

Characterizing threshold voltage shifts and recovery in Schottky gate and Ohmic gate GaN HEMTs [PDF]

, 2020
Threshold voltage shift in normally-OFF GaN High Electron Mobility Transistors (HEMTs) is an important reliability concern in GaN devices. Differences in device architecture between Schottky gate and Ohmic gate normally-OFF GaN HEMTs means that there are
Gonzalez, Jose Ortiz, Etoz, Burhan, Alatise, Olayiwola M.   +2 more
core   +1 more source

Novel Bidirectional ESD Circuit for GaN HEMT

Micromachines
In this paper, the ESD protection circuit for p-GaN gate HEMTs with bidirectional clamp is proposed and investigated. ESD clamp circuits consist of several forward diodes in serials and a reverse diode.
Pengfei Zhang, Cheng Yang, Jingyu Shen, Xiaorong Luo, Gaoqiang Deng, Shuxiang Sun, Yuxi Wei, Jie Wei   +7 more
doaj   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

Micromachines
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer.
Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

XHEMTs on Ultrawide Bandgap Single‐Crystal AlN Substrates

Advanced Electronic Materials, Volume 12, Issue 3, 4 February 2026.
AlN/GaN/AlN XHEMTs [single‐crystal (“X‐tal”) high‐electron‐mobility transistors] are built on bulk AlN substrates with a 20 nm pseudomorphic GaN channel. This coherent epitaxial double heterostructure promises low‐defect, thermally efficient nitride electronics for next‐generation RF technology.
Eungkyun Kim, Yu‐Hsin Chen, Naomi Pieczulewski, Jimy Encomendero, David Anthony Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source