Results 81 to 90 of about 4,002 (212)
Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3
Advanced Functional Materials, Volume 35, Issue 51, December 16, 2025.Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko +5 more
wiley +1 more source
MicromachinesA comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Jun Pan +8 more
doaj +1 more source
Room Temperature Rejuvenation Technology for Irradiated Gallium Nitride Transistors
Advanced Materials Technologies, Volume 10, Issue 24, December 17, 2025.High temperature annealing has been the main defect mitigation technology since the Bronze age. We propose a room temperatureannealing technique that could be effective for electrically conducting materials. The new technique is demonstrated on a Gallium Nitride high electron mobility transistor undergoing radiation damage.
Md Hafijur Rahman +6 more
wiley +1 more source
125 - 211 GHz low noise MMIC amplifier design for radio astronomy [PDF]
, 2019 To achieve the low noise and wide bandwidth required for millimeter wavelength astronomy applications, superconductor-insulator-superconductor (SIS) mixer based receiver systems have typically been used.
Cleary, Kieran +7 more
core +2 more sources
Advanced Electronic Materials, Volume 11, Issue 20, December 3, 2025.An extremely thin h‐BN passivation layer and an air spacer are employed in the fabrication of GaN‐based HEMTs. While the DC characteristics of the h‐BN‐passivated GaN‐based HEMTs are identical to those of conventional SiN‐passivated devices, the RF performance is improved due to the formation of the air spacer and the reduction of parasitic ...
Sung‐Jae Chang +16 more
wiley +1 more source
MicromachinesIn order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer.
Qian Yu +11 more
doaj +1 more source
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric [PDF]
, 2015 Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd_(2)O_(3) are investigated by means of different thermal cycles and storage tests up to 500ºC for one week.
Calle, F. +4 more
core +2 more sources
MXene‐Integrated III‐Nitride Semiconductors: Recent Progress and Perspectives
Laser &Photonics Reviews, Volume 19, Issue 23, December 3, 2025.This review paper provides a comprehensive overview of the integration of MXenes with III‐nitrides across a wide range of applications, including photodetectors, light‐emitting diodes, gas sensors, transistors, and energy‐related systems such as photoelectrochemical cells.
B. Yamunasree +9 more
wiley +1 more source
Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs [PDF]
, 2018 Operating temperature distributions in AlGaN/GaN gateless and gated devices are characterized and analyzed using the InfraScope temperature mapping system.
Benbakhti, B +6 more
core +5 more sources
All‐GaN‐Based Monolithic MIS‐HEMT Integrated Micro‐LED Pixels for Active‐Matrix Displays
physica status solidi (a), Volume 222, Issue 23, December 2025.An all‐GaN‐based monolithic active‐matrix micro‐LED system that integrates metal‐insulator‐semiconductor high‐electron‐mobility transistors with LEDs is demonstrated. The proposed structure employs direct electron injection from the 2DEG into the quantum well. A 2 × 2 pixel matrix is constructed with row and column lines demonstrating the capability of
Yuta Furusawa +4 more
wiley +1 more source