Continuous-wave and Transient Characteristics of Phosphorene Microwave Transistors
, 2016 Few-layer phosphorene MOSFETs with 0.3-um-long gate and 15-nm-thick Al2O3 gate insulator was found to exhibit a forward-current cutoff frequency of 2 GHz and a maximum oscillation frequency of 8 GHz after de-embedding for the parasitic capacitance ...
Du, Yuchen +4 more
core +1 more source
Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates [PDF]
, 2017 Field plate (FP) control of current collapse and channel electric field distribution in AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure chemical vapor deposition silicon-nitride stoichiometry.
Calton, David +9 more
core +2 more sources
On‐State Current Increasing Structure of Source‐Connected Polarization Superjunction Transistor
physica status solidi (a), Volume 222, Issue 23, December 2025.For the polarization superjunction (PSJ) field effect transistor, a structure with the PSJ structure on the source electrode side is fabricated by partially etching the PSJ structure to increase the drain current. As a result, the saturation drain current increases as the PSJ region decreases, and the VBD·ID,sat is improved by a factor of 2.17.
Eito Kokubo +6 more
wiley +1 more source
Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs
IEEE Journal of the Electron Devices SocietyGallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu +9 more
doaj +1 more source
Plasmonic FET Terahertz Spectrometer
IEEE Access, 2020 We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 110 GHz to 9.2 THz with different ...
Xueqing Liu +2 more
doaj +1 more source
Al‐Rich AlGaN Channel/AlN Buffer High‐Electron‐Mobility Transistor with Superlattice Structure
physica status solidi (a), Volume 222, Issue 23, December 2025.This study examines the impact of inserting a superlattice structure into the Al0.6Ga0.4N channel of a high‐electron‐mobility transistor. Reciprocal space mapping and atomic force microscopy confirm improved stress relaxation and surface roughness, resulting in a 155% increase in drain current (Ids,max) and a positive threshold voltage shift.
Jooyong Park +5 more
wiley +1 more source
Ringing Noise Reduction Method for High‐Speed GaN Switching Converter
physica status solidi (a), Volume 222, Issue 23, December 2025.The noise reduction circuit for decreasing the ringing voltage peaks in the switching converter with GaN‐based high electron mobility transistors is proposed. First, the location of the stray inductance generating the ringing noise is investigated using radiated emission measurements, and the additional capacitor is inserted into the circuit in ...
Toshihide Ide +4 more
wiley +1 more source
Nucleation and Propagation of Traveling Charge Domains in a Planar AlGaN/GaN Triode Structure
physica status solidi (a), Volume 222, Issue 23, December 2025.This work presents a novel model for the nucleation of charge domain instabilities in semiconductors exhibiting negative differential drift velocity, identifying diffusion as the key factor inhibiting domain formation. A planar Gunn triode structure is proposed which overcomes obstacles to the realization of GaN‐based Gunn effect devices with ...
Jonathan Sculley, P. Douglas Yoder
wiley +1 more source
Dipole scattering in polarization induced two-dimensional electron gases
, 2000 Unusually large spontaneous and piezoelectric fields in the III-V nitrides have led to the making of an entirely new class of two-dimensional electron gas.
Gossard, Arthur. C. +2 more
core +1 more source
Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress [PDF]
, 2014 We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation.
C.-Y. Chen +7 more
core +1 more source