Results 91 to 100 of about 29,855,390 (205)

Electronic Transport in AlGaN/GaN Nanowires Under Ultraviolet Excitation and Edge Depletion Effect, Studied in a Wide Temperature Range

Nano Select, Volume 7, Issue 2, February 2026.
Electronic transport in AlGaN/GaN nanowires (NW) was studied under ultraviolet excitation in a wide temperature range. Significant changes in the conductivity of the structures were revealed and explained by the modulation of the space charge limited current (SCLC) effect. Temperature‐dependent measurements of transport and noise properties using noise
Svetlana Vitusevich, Vladislav V. Kaliuzhnyi, Mykola D. Tymochko, Alexander E. Belyaev   +3 more
wiley   +1 more source

Impact of Growth Temperature and Al/N Ratio on AlN Films Grown by Radio‐Frequency Molecular Beam Epitaxy on GaN Templates

physica status solidi (b), Volume 263, Issue 2, February 2026.
The growth mechanism of AlN films for high electron mobility transistors passivation is systematically investigated via radio‐frequency molecular beam epitaxy. While high‐temperature growth (700 °C) utilizes excess aluminum as a surfactant forming surface droplets, low‐temperature growth (300 °C) traps excess aluminum as defective metallic interlayers.
Trang Nakamoto, Yuma Kawakami, Takashi Fujii, Momoko Deura, Tsutomu Araki   +4 more
wiley   +1 more source

Low-Leakage and High-Breakdown Enhancement-Mode InAlGaN/GaN HEMTs Using a Non-Recessed Mist-CVD Li-Doped NiO/Al₂O₃ p-Gate Stack

IEEE Journal of the Electron Devices Society
Enhancement-mode (E-mode) InAlGaN/GaN high-electron-mobility transistors (HEMTs) are highly desirable for fail-safe power and RF applications; however, achieving stable normally-off operation without inducing plasma damage remains challenging due to the ...
Yan-Kuei Wu, Yu-Hsuan Chen, Hao-Chun Hung, Rong-Ming Ko, Wei-Chou Hsu   +4 more
doaj   +1 more source

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +2 more sources

Field Emission Control via Work Function Modulation in Semimetallic Graphene Edge Cathodes

Small, Volume 22, Issue 10, 17 February 2026.
Graphene edge cathodes, with atomically sharp edges, high carrier mobility, and electrostatically tunable electronic structure, enable a nanoscale vacuum transistor whose off‐channel gate directly modulates the emitter work function. The device achieves gate‐tunable current saturation from 10 to 300 K, low leakage, and amplification behavior enabled by
Cheul Hyun Yoon, Jun Yeong Choe, Yeong Jin Ahn, Gil Su Jeon, Byoung Don Kong   +4 more
wiley   +1 more source

Expanded Gate-Voltage Operating Range of p-GaN Gate HEMTs Operated in Synchronized Photonic-Electronic Driving (SPED) Scheme

Previously, we demonstrated a synchronized photonic-electronic driving (SPED) scheme for the normally-off GaN HEMTs. In this work, the gate reliability of p-GaN gate HEMTs under such driving schemes is further investigated.
Cheng, Yan, Wu, Zheng, Deng, Longge, Chen, Kevin J., Chen, Tao, Zhang, Haochen   +5 more
core   +1 more source

State of the art on gate insulation and surface passivation for GaN-based power HEMTs [PDF]

, 2018
In this article, we review recent progress on AlGaN/GaN and InAlN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) using Al-based oxides, nitride dielectrics, SiO2 and high-k dielectrics.
Nishiguchi, Kenya, Zenji Yatabe, Hashizume, Tamotsu, Kuzmik, Jan, Yatabe, Zenji, Tamotsu Hashizume, Kenya Nishiguchi, Kaneki, Shota, Shota Kaneki, Jan Kuzmik   +9 more
core   +1 more source

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

IEEE Journal of the Electron Devices Society
Gallium Nitride (GaN) high-electron-mobility transistors (HEMTs) feature low ON resistance and low gate-input capacitance, so that they can serves as power switches with switching frequency from several MHz to tens of MHz level.
Ziheng Liu, Jiayin He, Hongjie Peng, Ju Gao, Wenbo Xia, Chengkang Ao, Jinyan Wang, Maojun Wang, Jin Wei, Yong Xie   +9 more
doaj   +1 more source

Ferroelectric HZO Thin Films for FEFETs: Crystal Structure‐Device Performance Relationship

Advanced Electronic Materials, Volume 12, Issue 1, 7 January 2026.
Crystal Structure of HZO Thin Films Methods of Thin Film Deposition 1T‐FeFET Design Influence on Ferroelectric Properties FeFET Applications Recent Advances and Challenges ORTHORHOMBIC HEARTBEAT. Abstract The rapid development of hafnium zirconium oxide (HZO) thin films has established ferroelectric field‐effect transistors (FeFETs) as strong ...
Harsha Ragini Aturi, Ramana Murthy Gajula, Deepshikha Rathore   +2 more
wiley   +1 more source

Plasmonic FET Terahertz Spectrometer

IEEE Access, 2020
We show that Si MOSFETs, AlGaN/GaN HEMTs, AlGaAs/InGaAs HEMTs, and p-diamond FETs with feature sizes ranging from 20 nm to 130 nm could operate at room temperature as THz spectrometers in the frequency range from 110 GHz to 9.2 THz with different ...
Xueqing Liu, Trond Ytterdal, Michael Shur   +2 more
doaj   +1 more source