Results 111 to 120 of about 29,855,390 (205)

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

Challenges and advancements in p-GaN gate based high electron mobility transistors (HEMTs) on silicon substrates

Gallium nitride (GaN) based high elect mobility transistors (HEMTs) possess a multitude of excellent characteristics, enabling them to overcome the performance limitations of traditional silicon-based power devices.
Zhu, Miaodong, Li, Xiaohang, Yang, Ying, Li, Zexi, Gao, Fangliang, Li, Guoxin, Shang, Jianbo, Feng, Yikang, Guo, Zhonghong, Lu, Yunshu, Li, Shuti, Li, Hangtian, Wei, Wenqiu   +12 more
core   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

IEEE Journal of the Electron Devices Society
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer.
Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang   +11 more
doaj   +1 more source

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

2024 IEEE International Reliability Physics Symposium (IRPS)
In this work, a random telegraph noise (RTN) analysis has been carried out, to the best of our knowledge, for the first time to characterize the defects activated by forward-biased gate stress in GaN-HEMTs with metal/pGaN Schottky gate. The RTN signal has been measured for both gate leakage (IG) and drain current (ID), after each stress phase until the
Millesimo M., Fiegna C., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Tallarico A. N.   +7 more
openaire   +2 more sources

Self-Protection Mechanism of Schottky-Type p-GaN Gate HEMTs Under Forward Gate ESD Stress

The gate-side HBM (human body model) ESD robustness of Schottky-type p-GaN gate HEMTs is investigated. The maximum reverse gate current and gate breakdown voltage in the quasi-static I-V tests are higher than the forward cases, whereas the forward gate ...
Zheng, Zheyang, Shu, Ji, Chen, Kevin J., Sun, Jiahui   +3 more
core   +1 more source

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae, Ho-Young Cha, Hyungtak Kim   +2 more
doaj   +1 more source

Enhanced performance of p-GaN gate AlGaN/GaN high-electron-mobility transistors for power applications

, 2021
Gallium nitride (GaN) possesses excellent physical properties, such as a high critical electric field, a high saturation velocity, a high electron mobility, and a good thermal stability.
Zhou, Guangnan
core   +1 more source