Results 111 to 120 of about 4,002 (212)

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

Monolithic Comparators on a Novel Platform of GaN-Based D/E-Mode HEMTs by LPCVD SiN_x Passivation Compatible to Gate Dielectrics

IEEE Journal of the Electron Devices Society
This paper demonstrates an integrated comparator based on a novel platform of GaN-based high electron mobility transistors (HEMTs) with low pressure chemical vapor deposition (LPCVD) SiNx as both gate dielectric and passivation layer.
Xinyu Sun, Hongwei Gao, Fangqing Li, Haoran Qie, Xin Chen, Haodong Wang, Yaozong Zhong, Xiaolu Guo, Xinchen Ge, Zhihong Feng, Qian Sun, Hui Yang   +11 more
doaj   +1 more source

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

, 2017
The sensitivity of direct terahertz detectors based on self-mixing of terahertz electromagnetic wave in field-effect transistors is being improved with noise-equivalent power close to that of Schottky-barrier-diode detectors.
Li, Xiang(李想), Li, Xingxin, Luo, Muchang, Qin, Hua(秦华), Sun, Jiandong(孙建东), Sun, Yunfei(孙云飞), Yu, Yao, Zhang, Zhipeng(张志鹏), 孙建东, 秦华   +9 more
core   +1 more source

Stability of GaN HEMT Device Under Static and Dynamic Gate Stress

IEEE Journal of the Electron Devices Society
In this work, we investigated the stability of a ${p}$ -GaN gate with high electron mobility transistors (HEMTs) including an internal integrated gate circuit.
Linfei Gao, Ze Zhong, Qiyan Zhang, Xiaohua Li, Xinbo Xiong, Shaojun Chen, Longkou Chen, Huaibao Yan, Anle Zhang, Jiajun Han, Wenrong Zhuang, Feng Qiu, Hsien-Chin Chiu, Shuangwu Huang, Xinke Liu   +14 more
doaj   +1 more source

Abnormal Temperature and Bias Dependence of Threshold Voltage Instability in p-GaN/AlGaN/GaN HEMTs

IEEE Journal of the Electron Devices Society
In this work, we investigated the instability of threshold voltage (Vth) in p-GaN/AlGaN/GaN high electron mobility transistors (HEMTs) under positive gate biases and high temperatures.
Myeongsu Chae, Ho-Young Cha, Hyungtak Kim   +2 more
doaj   +1 more source

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Applied Physics Express
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R _c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μ m device
Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen, Edward Yi Chang   +5 more
doaj   +1 more source

Normally-off GaN HEMTs [PDF]

, 2016
As silicon transistors have become a staple in everyday usages, other semiconductor materials (specifically III-V materials) are being researched to determine how their differing physical properties can be harnessed toward even better devices or ...
Tsai, Philip
core  

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Thermal effects in Ni/Au and Mo/Au gate metallization AlGaN/GaN HEMT's reliability [PDF]

, 2011
AlGaN/GaN high electron mobility transistors (HEMT) are key devices for the next generation of high-power, high-frequency and high-temperature electronics applications.
Calle Gómez, Fernando, Cuerdo Bragado, Roberto, Dua, C., Jiménez, A., Muñoz Merino, Elias, Romero Rojo, Fátima, Tadjer, Marko Jak, Uren, M.   +7 more
core  

Optimization of off-state breakdown voltage in GaN high-electron-mobility transistors [PDF]

, 2016
Gallium nitride (GaN) technology is the next revolution in electronics as it offers a large bandgap (high critical electric field) and high electron mobility (2D electron gas) in one transistor design, surpassing silicon (Si), gallium arsenide (GaAs ...
Kasap, Begum
core