Results 121 to 130 of about 4,002 (212)

On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs [PDF]

, 2007
Angelini, A., Bonani, Fabrizio, Cappelluti, Federica, Furno, M., Ghione, Giovanni, Pirola, Marco   +5 more
core   +1 more source

Pulsed operation and performance of commercial GaN HEMTs [PDF]

, 2009
Beach, MA, Fornetti, F, Morris, KA
core  

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
openaire   +1 more source

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors [PDF]

, 2015
Benoit Bakeroot, Brice De Jaeger, Denis Marcon, Guido Groeseneken, H. C. Lin, Jacopo Franco, Marleen Van Hove, Nicollian E. H., Robin Roelofs, Stefaan Decoutere, Steve Stoffels, Tian-Li Wu   +11 more
core   +1 more source

Source Field Plate Incorporated Monolithic Inverters Composed of GaN-Based CMOS-HEMTs with Double-2DEG Channels and Fin-Gated Multiple Nanochannels. [PDF]

Materials (Basel)
Chen HY, Lee HY, Lee H, Wu YR, Lee CT.
europepmc   +1 more source

Recent Advances in Diamond-Capped GaN HEMTs for RF Application. [PDF]

Nanomaterials (Basel)
Xiang Y, Wu M, Sun H, Li S, Chen H, Wei J, Yan B, Yang L, Zhang M, Lu H, Hou B, Ma X, Hao Y.   +12 more
europepmc   +1 more source

Optimization of enhancement-mode MIS-GaN HEMT with dual channel for simple process using TCAD simulation. [PDF]

Sci Rep
Lee KH, Yang Y, Heo J, Kim JH.
europepmc   +1 more source

Gate-Localized Fluorination Enables Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors. [PDF]

ACS Appl Electron Mater
Kim DW, Kim B, Cho Y, Kim S, Gong Y, Baek Y, Bae B, Noh YK, Bae S, Park DH, Lee K.   +10 more
europepmc   +1 more source

Demonstration of TFTs 3D monolithically integrated on GaN HEMTs using cascode configuration with high breakdown voltage (> 1900 V). [PDF]

Sci Rep
Wu TL, Ho HJ, Liu CW, Singh SK, Chen YC, Chen HW.   +5 more
europepmc   +1 more source

The Impact of Load-Dump Stress on p-GaN HEMTs Under Floating Gate Condition. [PDF]

Micromachines (Basel)
Shen Z, Shi Y, Wu L, He L, Chen X, Chen Y, Zhao D, He J, Zhu G, Zeng H, Lu G.   +10 more
europepmc   +1 more source