Results 121 to 130 of about 29,855,390 (205)

High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications

Applied Physics Express
In this study, AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts were fabricated. The device presents a contact resistance ( R _c ) of 0.64 Ω·mm and high linearity characteristics. The two-tone measurement at 28 GHz shows that the 2 × 50 μ m device
Che-Wei Hsu, Yueh-Chin Lin, Shao-Lun Lee, Kai-Wen Chen, Ying-Ciao Chen, Edward Yi Chang   +5 more
doaj   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Reliability Assessment of 650-V Schottky p-GaN HEMTs Under Reverse Conduction Stress [PDF]

The GaN-based high-electron mobility transistors (HEMTs) can operate efficiently in reverse conduction mode without requiring an intrinsic antiparallel diode, reducing power losses and enabling higher switching frequencies.
Tallarico A. N., Smerzi S. A., Iucolano F., Bevilacqua S., Fiegna C., Cioni M., Millesimo M., Russo A.   +7 more
core   +1 more source

OFF-State Leakage Degradation Induced by Heavy-Ion Irradiation in Schottky p-GaN Gate HEMTs

IEEE Access
This work investigates non-catastrophic degradation induced by heavy-ion irradiation in commercial 200-V Schottky p-GaN gate HEMTs biased in the OFF-state at their maximum rated drain voltage.
A. N. Tallarico, K. Niskanen, V. Volosov, M. Millesimo, C. Fiegna   +4 more
doaj   +1 more source

Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs

, 2017
In this letter, we report a detailed experimental investigation of the time-dependent breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate, controlled by a Schottky metal/p-GaN junction.
Posthuma, Niels, Sangiorgi, Enrico, MAGNONE, PAOLO, Tallarico, Andrea Natale, Fiegna, Claudio, Stoffels, Steve, Decoutere, Stefaan   +6 more
core   +1 more source

Dynamic Characterizations of AlGaN/GaN HEMTs With Field Plates Using a Double-Gate Structure

, 2013
 Anovel double-gate AlGaN/GaN HEMT, in which an additional top-gate covers the adjacent regions of a normal gate, was proposed and fabricated for the first time to compare the dynamic characteristics of AlGaN/GaN HEMTs with a source field plate (SFP)
Cai, Y(蔡勇), Yu, Guohao, Wang, Yue, Wang, Y, Cai, Yong, Zhang, BS(张宝顺), Yu, GH(于国浩), Dong, Zhihua, Zeng, Chunhong, Zeng, CH(曾春红), Zhang, Baoshun, Dong, ZH(董志华)   +11 more
core  

Influence of p-GaN gate airgap in p-GaN AlGaN/GaN HEMTs for improved DC performance

Abstract This study proposes a novel p-GaN AlGaN/GaN high-electron-mobility transistor (HEMT) structure incorporating a gate airgap to address gate leakage and high electric field issues. Comprehensive device simulations conducted using COMSOL Multiphysics show that the airgap-integrated design enhances the breakdown voltage by 47.7% and ...
Muhaimin Haziq, Hiroshi Kawarada, Shaili Falina, Mohd Syamsul   +3 more
openaire   +1 more source

Improved Comprehensive Performance of GaN-Based E-Mode HEMTs with a Thin Al₂O₃ Interlayer. [PDF]

Nanomaterials (Basel)
Qiao G, Liu H, Feng C, Liao Y, Gong R, Guo H, Shao P, Chen D.   +7 more
europepmc   +1 more source

Device Design Implications on <i>R</i>_ON×<i>Q</i>_OSS FOM in p-GaN Power HEMTs: A Simulation Study. [PDF]

Micromachines (Basel)
Zagni N, Verzellesi G, Chini A.
europepmc   +1 more source

AlGaN/GaN HEMT H₂ sensor with integrated Wheatstone bridge and on-chip microheater for 0.1-ppm detection. [PDF]

Microsyst Nanoeng
Yu Y, Liu Y, Ren W, Liu Y, Zhang Y, Wang Z, Zhuo Q, Liu Z, Wang T, Sun J.   +9 more
europepmc   +1 more source