Results 141 to 150 of about 4,002 (212)

Polarization Engineered Design for Normally-Off, Higher Drain Current and Higher Breakdown Voltage Gan-Based MOS-HEMT. [PDF]

ACS Omega
Omar A, Loan SA.
europepmc   +1 more source

Self-Calibrating TSEP for Junction Temperature and RUL Prediction in GaN HEMTs. [PDF]

Nanomaterials (Basel)
Cui Y, Gan Y, Wen K, Jiang Y, Chen C, Wang Q, Yu H.   +6 more
europepmc   +1 more source

Recent Progress of Ion Implantation Technique in GaN-Based Electronic Devices. [PDF]

Micromachines (Basel)
Lu H, Hao X, Zhang Y, Yang L, Hou B, Zhang M, Wu M, Ma X, Hao Y.   +8 more
europepmc   +1 more source

Influence of Electrical Transients and A/D Converter Dynamics on Thermal Resistance Measurements of Power MOSFETs. [PDF]

Sensors (Basel)
Górecki K, Posobkiewicz K.
europepmc   +1 more source

Effect of Dual Al₂O₃ MIS Gate Structure on DC and RF Characteristics of Enhancement-Mode GaN HEMT. [PDF]

Micromachines (Basel)
Li Y, Huang Y, Li J, Sun H, Guo Z.
europepmc   +1 more source

Investigation on the Isolation Approaches for High-Voltage GaN-on-Sapphire Monolithic Power Integrated Circuits. [PDF]

Micromachines (Basel)
Li S, Zhang H, Ma Y, Wang Q, Wang K, Xia Y, Wu L, Li Y, Zhu T, Ye R, Wei J, Zhang L, Liu S, Sun W.   +13 more
europepmc   +1 more source

Effects of Switching on the 2-DEG Channel in Commercial E-Mode GaN-on-Si HEMT. [PDF]

Micromachines (Basel)
Baca-Arroyo R.
europepmc   +1 more source

The Effect of Dual-Layer Carbon/Iron-Doped Buffers in an AlGaN/GaN High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel)
Chang PH, Huang CR, Liu CH, Lee KW, Chiu HC.   +4 more
europepmc   +1 more source

Numerical Investigation on Electrothermal Performance of AlGaN/GaN HEMTs with Nanocrystalline Diamond/SiNx Trench Dual-Passivation Layers. [PDF]

Nanomaterials (Basel)
Wang P, Deng C, Tang C, Tang X, Tao W, Wang Z, Tao N, Wang Q, Wang Q, Yu H.   +9 more
europepmc   +1 more source