Results 141 to 150 of about 29,855,390 (205)

Quasi-Vertical GaN-Based Trench Gate MOSFETs Treated with Fluorine-Plasma. [PDF]

Micromachines (Basel)
Zhang P, Li DY, Xu JR, Chang QY, Hou B, Xi H, Ma XH.   +6 more
europepmc   +1 more source

Machine learning- assisted remaining useful lifetime prediction of power electronic converters. [PDF]

Sci Rep
Sayed H, Krishnamoorthy HS.
europepmc   +1 more source

Degradation and Damage Effects in GaN HEMTs Induced by Low-Duty-Cycle High-Power Microwave Pulses. [PDF]

Micromachines (Basel)
Xing D, Liu H, Su M, Liu X, Liu C.
europepmc   +1 more source

Localized Electric Field Tailoring to Balance Voltage Reliability, Current Density, and High-Frequency Performance of AlGaN/GaN HEMTs. [PDF]

Micromachines (Basel)
Wang Y, Wang J, Dong Z, Tian P, Liu Y, Zhai J, Hu W.   +6 more
europepmc   +1 more source

Suppression of Interface Traps and Improved Breakdown in Recessed-Gate AlGaN/GaN MISHEMTs Using Low-Temperature Nitrogen Passivation. [PDF]

ACS Omega
Chen HC, Liu AC, Lin CH, Chou SY, Chang TC, Kao TS, Kuo HC.   +6 more
europepmc   +1 more source

Influence of LPCVD-Si₃N₄ Thickness on Polarization Coulomb Field Scattering in AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. [PDF]

Micromachines (Basel)
Jiang G, Li W, Luo X, Liu Y, Fu C, Zhang Q, Zhang G, Lin Z, Cui P.   +8 more
europepmc   +1 more source

Photoelectrochemical Oxidation and Etching Methods Used in Fabrication of GaN-Based Metal-Oxide-Semiconductor High-Electron Mobility Transistors and Integrated Circuits: A Review. [PDF]

Micromachines (Basel)
Lee CT, Lee HY.
europepmc   +1 more source

High power density gallium nitride radio frequency transistors via enhanced nucleation in heteroepitaxy. [PDF]

Nat Commun
Zhou H, Zhang C, Zhang K, Huang Z, Liu F, Zhou M, Gong H, Tang S, Liu W, Wang B, Dong Y, Liu J, Zhou S, Xu Z, Wang S, Liu Z, Xu S, Zhang C, Wang X, Wang H, Zhang Y, Cheng Z, Chen T, Zhang Y, Hao Y, Zhang J.   +25 more
europepmc   +1 more source

Single-Crystalline Si Stacked AlGaN/GaN High-Electron-Mobility Transistors with Enhanced Two-Dimensional Electron Gas Density. [PDF]

Micromachines (Basel)
Ham G, Shin E, Yoon S, Yang J, Choi Y, Lim G, Kim K.   +6 more
europepmc   +1 more source

Ohmic Contact Resistance in Wide-Bandgap and Ultrawide-Bandgap Power Semiconductors: From Fundamental Physics to Interface Engineering. [PDF]

Materials (Basel)
Weis M.
europepmc   +1 more source