Results 161 to 170 of about 29,855,390 (205)

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

IEEE Transactions on Electron Devices, 2019
In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico, S. Stoffels, N. Posthuma, B. Bakeroot, S. Decoutere, E. Sangiorgi, C. Fiegna   +6 more
openaire   +2 more sources

Dynamic Threshold Voltage in $p$-GaN Gate HEMT

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019
The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei, Han Xu, Ruiliang Xie, Meng Zhang, Hanxing Wang, Yuru Wang, Kailun Zhong, Mengyuan Hua, Jiabei He, Kevin J. Chen   +9 more
openaire   +1 more source

GaN HEMTs with p-GaN gate: field- and time-dependent degradation

SPIE Proceedings, 2017
GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO, MENEGHINI, MATTEO, ROSSETTO, ISABELLA, CANATO, ELEONORA, Bartholomeus, J., DE SANTI, CARLO, TRIVELLIN, NICOLA, ZANONI, ENRICO   +7 more
openaire   +1 more source

Charge Trapping Related Channel Modulation Instability in P-GaN Gate HEMTs

Microelectronics Reliability, 2016
Abstract In this paper, a study of the channel modulation instability of commercial p-GaN gate HEMTs is presented. During the gate-voltage stress test, substantial RDS(ON) variations up to 78 mΩ (93.8%) were observed. It is found that the p-GaN/AlGaN/GaN gate structure enables the injection of holes and electrons, which can be captured by the donor ...
Kuang Sheng
exaly   +2 more sources

Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain

Superlattices and Microstructures, 2021
Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang, Wei Mao, Shenglei Zhao, Jiabo Chen, Ming Du, Xuefeng Zheng, Chong Wang, Chunfu Zhang, Jincheng Zhang, Yue Hao   +9 more
openaire   +1 more source

Review of technology for normally-off HEMTs with p-GaN gate

Materials Science in Semiconductor Processing, 2018
Owing to the high carrier density and high electron mobility of the two dimensional electron gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are suitable devices for high power and high frequency applications. Clearly, the presence of the 2DEG at the interface of AlGaN/GaN heterostructures makes HEMTs intrinsically
G Greco, F Iucolano, F Roccaforte
openaire   +3 more sources

A Novel Digital Etch Technique for p-GaN Gate HEMT

2018 IEEE International Conference on Semiconductor Electronics (ICSE), 2018
We demonstrate the digital etching (DE) process to fabricated E-mode p-GaN/AIGaN/GaN HEMT. DE process comprising low power oxygen (02) plasma oxidizing and low power boron trichloride (BCl 3 ) plasma etching to selectively remove p-GaN layer. The atomic layer etching (ALE) has an etching rate of 1.62 nm/cycle to achieved depth of 70nm.
Yuan Lin, Yueh Chin Lin, Franky Lumbantoruan, Chang Fu Dec, Burhanuddin Yeop Majilis, Edward Yi Chang   +5 more
openaire   +1 more source

Impact of Gate Offset on PBTI of p-GaN Gate HEMTs

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
Ethan S. Lee, Jungwoo Joh, Dong-Seup Lee, Jesús A. del Alamo   +3 more
openaire   +1 more source

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

IEEE Transactions on Electron Devices, 2023
Xin Chao, Chengkang Tang, Jingjing Tan, Chen Wang, QingQing Sun, David Wei Zhang   +5 more
openaire   +1 more source

VTH Instability of p-GaN Gate HEMTs under Static and Dynamic Gate Stress

IEEE Electron Device Letters, 2018
The impacts of static and dynamic gate stress on the threshold voltage ( ${V}_{\text {TH}}$ ) instability in Schottky-type ${p}$ -GaN gate AlGaN/GaN heterojunction field-effect transistors are experimentally investigated. ${V}_{\text {TH}}$ shifts negatively under large positive bias static stress ( ${V}_{\text {G}}\_ {\text {stress}} >
He, Jiabei ECE, Tang, Gaofei, Chen, Jing
openaire   +2 more sources