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The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters. [PDF]
Nanomaterials (Basel)Yu J +10 more
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Frequency- and Temperature-Dependent Gate Reliability of Schottky-Type ${p}$ -GaN Gate HEMTs
IEEE Transactions on Electron Devices, 2019In this paper, we carried out a systematic investigation on gate degradation and the physical mechanism of the Schottky-type ${p}$ -GaN gate HEMTs under positive gate voltage stress. The frequency- and temperature-dependent measurements have been conducted.
Jiabei He +5 more
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Reverse blocking p-GaN gate AlGaN/GaN HEMTs with hybrid p-GaN ohmic drain
Superlattices and Microstructures, 2021Abstract A normally-off reverse blocking high electron mobility transistor (HEMT) with p-GaN gate and hybrid p-GaN ohmic drain (p-GaN RB-HEMT) has been fabricated and investigated to achieve reverse blocking capability. Compared with conventional p-GaN gate HEMT with ohmic drain (p-GaN HEMT), the proposed device features that a p-GaN layer is ...
Haiyong Wang +9 more
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A Novel Normally-off Laterally Coupled p-GaN Gate HEMT
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021In this paper, a novel laterally coupled p-GaN gate (LCPG) structure have been implemented by the selectively hydrogen plasma treatment to fabricate GaN-on-Si HEMTs with a high breakdown voltage (BV) and a low ON-resistance $(R_{\text{ON}})$ . Due to the coupled effect inside the LCPG, the 2DEG under the gate structure is depleted.
Xing Wei +10 more
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Gate Reliability of p-GaN HEMT With Gate Metal Retraction
IEEE Transactions on Electron Devices, 2019In this article, we present an analysis of the gate degradation induced by long-term forward gate stress in GaN-based power HEMTs with p-type gate, controlled by a Schottky metal-retracted/p-GaN junction. In particular, time-dependent gate breakdown and threshold voltage instability are investigated as function of different geometries, gate biases, and
A. N. Tallarico +6 more
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Dynamic Threshold Voltage in $p$-GaN Gate HEMT
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2019The $p$ -GaN gate HEMT with a Schottky gate contact is studied in this work. The threshold voltage ( $\boldsymbol{V}_{\mathbf{th}}$ ) of the device is found to have a dynamic nature. When the device experiences a high drain voltage $V_{\text{DSQ}}$ , the gate-to-drain capacitance $C_{\text{GD}}$ is charged to $\boldsymbol{Q}_{\mathbf{GD ...
Jin Wei +9 more
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Gate Breakdown Analysis of Schottky p-GaN gate HEMTs under High Positive Gate Bias
ECS Journal of Solid State Science and Technology, 2022This study investigates the gate degradation mechanisms of Schottky p-GaN gate HEMTs systemically. The constant gate bias stress is applied to investigate the gate breakdown. Schottky p-GaN Gate HEMTs show a shorter gate lifetime as gate bias increases. The gate leakage current after gate breakdown shows a resistance-like characteristic. The equivalent
Zhen-Wei Qin +3 more
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Low-Temperature Accelerated Gate Reliability of Schottky-type p-GaN Gate HEMTs
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020The time-dependent gate failure behavior of Schottky-type p-GaN gate transistors subjected to positive gate voltage stress in the low-temperature range of power electronic applications (i.e. −100 °C ~ 25 °C) is investigated. By means of temperature-accelerated and voltage-accelerated gate stress experiments, the dependence of time-to-failure on ...
Jiabei He +6 more
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GaN HEMTs with p-GaN gate: field- and time-dependent degradation
SPIE Proceedings, 2017GaN-HEMTs with p-GaN gate have recently demonstrated to be excellent normally-off devices for application in power conversion systems, thanks to the high and robust threshold voltage (VTH>1 V), the high breakdown voltage, and the low dynamic Ron increase.
MENEGHESSO, GAUDENZIO +7 more
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