Results 181 to 190 of about 4,002 (212)
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Simulation Study of p-GaN Gate HEMTs With Dielectric Interlayer
2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS), 2023Shiyin Zhang +3 more
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Reliability Evaluation of p-GaN Gate HEMTs in Bootstrap Circuit
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2022Yan Cheng +6 more
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Gate Reliability of enhanced-mode p-GaN HEMTs
This thesis reports a summary of the experimental results for electronic devices based on Gallium Nitride (GaN). The analysis conducted was mainly based on test structures developed by STMicroelectronics and carried out in the ACME laboratories of the Department of Information Engineering of the University of Padua.openaire +1 more source
Heteroepitaxy of Hf0.5Zr0.5O2 ferroelectric gate layer on AlGaN/GaN towards normally-off HEMTs
Applied Surface Science, 2022Anran Gao
exaly
Simulation model for a GaN-HEMT with Schottky p-GaN-Gate
2021Neuartige Leistungstransistoren mit weitem Bandabstand aus den Materialien Siliziumkarbid (SiC) und Galliumnitrid (GaN) bieten im Vergleich zu Silizium-Schaltern die Möglichkeit, Systeme mit gesteigerten Schaltfrequenzen zu realisieren. Aufgrund der auftretenden schnellen Schalt- und Stromanstiegsgeschwindigkeiten steigt der Einfluss der parasitären ...
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HYDROGEN PLASMA TREATED P-GAN GATE HEMTS: DEVICE TO INTEGRATION
This thesis investigates the fabrication and reliability of a high electron mobility transistor (HEMT) integrated circuit (IC) platform for power conversion, emphasizing the advantages of Gallium Nitride (GaN) materials in power electronics. Highlighting GaN's superior physical and electrical properties over traditional materials, this work addresses ...openaire +1 more source
1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current
IEEE Transactions on Electron Devices, 2021Jiang, Huaxing +2 more
exaly
Dynamic Gate Capacitance Model for Switching Transient Analysis in P-GaN Gate HEMTs
2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2023Caien Sun, Zixu Niu, Shu Yang
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p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current
IEEE Electron Device Letters, 2013Injun Hwang, Jongseob Kim, Jaikwang Shin
exaly