Results 191 to 200 of about 4,002 (212)
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Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
IEEE Transactions on Electron Devices, 2013Naveen Karumuri +2 more
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Investigation of the p-GaN Gate Breakdown in Forward-Biased GaN-Based Power HEMTs
IEEE Electron Device Letters, 2017Andrea N Tallarico +2 more
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Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs
IEEE Transactions on Power Electronics, 2020Ruizhe Zhang, Joseph P Kozak, Ming Xiao
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State of the art on gate insulation and surface passivation for GaN-based power HEMTs
Materials Science in Semiconductor Processing, 2018Kenya Nishiguchi +2 more
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Review of technology for normally-off HEMTs with p-GaN gate
Materials Science in Semiconductor Processing, 2018Giuseppe Greco, Fabrizio Roccaforte
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High-Voltage p-GaN HEMTs With OFF-State Blocking Capability After Gate Breakdown
IEEE Electron Device Letters, 2019Jiang, Huaxing +2 more
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Gate Leakage Mechanisms in AlInN/GaN and AlGaN/GaN MIS-HEMTs and Its Modeling
IEEE Transactions on Electron Devices, 2017Gourab Dutta +2 more
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Recessed p-GaN Gate MIS-HEMT with AlN Interlayer and Buried p-GaN Layer
SemiconductorsP. S. Sreelekshmi, Jobymol Jacob
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V-Gate GaN HEMTs for X-Band Power Applications
IEEE Electron Device Letters, 2008Rongming Chu, David Brown, Stacia Keller
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