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Recent Advances in Diamond-Capped GaN HEMTs for RF Application [PDF]
NanomaterialsSelf-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000
Yuanmeng Xiang +12 more
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High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates [PDF]
NanomaterialsGallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities
Shiming Li +7 more
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Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers
Micromachines, 2022 Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with
Huaixin Guo +4 more
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Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
Micromachines, 2023 Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency ...
Xiazhi Zou +6 more
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Micromachines, 2023 In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported.
Ming-Wen Lee +4 more
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Nano-Micro Letters, 2021 High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (
Xin Chen +8 more
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Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
Micromachines, 2023 As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang +5 more
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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Crystals, 2021 We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the ...
Sung-Jae Chang +10 more
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AIP Advances, 2021 AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature ...
Dae-Young Jeon +3 more
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Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress
IEEE Journal of the Electron Devices Society, 2021 The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper.
Y. Ren +8 more
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