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Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Micromachines, 2022
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with
Huaixin Guo, Jianjun Zhou, Yuechan Kong   +2 more
exaly   +4 more sources

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Micromachines, 2023
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency ...
Xiazhi Zou, Jiayi Yang, Qifeng Qiao, Xinbo Zou, Jiaxiang Chen, Yang Shi, Kailin Ren   +6 more
doaj   +2 more sources

Recent Advances in Diamond-Capped GaN HEMTs for RF Application [PDF]

Nanomaterials
Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000
Yuanmeng Xiang, Mei Wu, Haolun Sun, Shiming Li, Hongda Chen, Jiamin Wei, Binyan Yan, Ling Yang, Meng Zhang, Hao Lu, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +2 more sources

High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates [PDF]

Nanomaterials
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities
Shiming Li, Mei Wu, Ling Yang, Hao Lu, Bin Hou, Meng Zhang, Xiaohua Ma, Yue Hao   +7 more
doaj   +2 more sources

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Holos, 2019
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
doaj   +2 more sources

Simulation and optimization of HEMTs [PDF]

2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA), 2016
8 pages, 19 ...
Hesameddin Ilatikhameneh, Reza Ashrafi, Sina Khorasani   +2 more
openaire   +2 more sources

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications

Micromachines, 2023
In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported.
Ming-Wen Lee, Cheng-Wei Chuang, Francisco Gamiz, Edward-Yi Chang, Yueh-Chin Lin   +4 more
doaj   +1 more source

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Nano-Micro Letters, 2021
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (
Xin Chen, Jianqi Dong, Chenguang He, Longfei He, Zhitao Chen, Shuti Li, Kang Zhang, Xingfu Wang, Zhong Lin Wang   +8 more
doaj   +1 more source

Hot electron modelling of HEMTs [PDF]

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001
The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole, Christopher M. Snowden, Shahzad Hussain   +2 more
openaire   +1 more source

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Micromachines, 2023
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang, Jiao Nan, Zhiwen Tian, Pei Liu, Yinhe Wu, Jincheng Zhang   +5 more
doaj   +1 more source