Results 1 to 10 of about 1,564 (164)

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers

Micromachines, 2022
Nanocrystalline diamond capping layers have been demonstrated to improve thermal management for AlGaN/GaN HEMTs. To improve the RF devices, the application of the technology, the technological approaches and device characteristics of AlGaN/GaN HEMTs with
Yuechan Kong, Huaixin Guo
exaly   +3 more sources

Recent Advances in Diamond-Capped GaN HEMTs for RF Application [PDF]

Nanomaterials
Self-heating effects severely limit the performance of gallium nitride high-electron-mobility transistors (GaN HEMTs) in high-power radio frequency (RF) applications. Diamond capping technology leveraging diamond’s exceptional thermal conductivity (>2000
Yuanmeng Xiang, Mei Wu, Haolun Sun, Shiming Li, Hongda Chen, Jiamin Wei, Binyan Yan, Ling Yang, Meng Zhang, Hao Lu, Bin Hou, Xiaohua Ma, Yue Hao   +12 more
doaj   +2 more sources

High Reliability and Breakdown Voltage of GaN HEMTs on Free-Standing GaN Substrates [PDF]

Nanomaterials
Gallium nitride (GaN)-based high electron mobility transistors (HEMTs) are pivotal for next-generation power-switching applications, but their reliability under high electric fields remains constrained by lattice mismatches and high dislocation densities
Shiming Li, Mei Wu, Ling Yang, Hao Lu, Bin Hou, Meng Zhang, Xiaohua Ma, Yue Hao   +7 more
doaj   +2 more sources

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Holos, 2019
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
doaj   +2 more sources

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review

Micromachines, 2023
Gallium nitride (GaN) high-electron-mobility transistors (HEMTs) have been considered promising candidates for power devices due to their superior advantages of high current density, high breakdown voltage, high power density, and high-frequency ...
Xiazhi Zou, Jiayi Yang, Qifeng Qiao, Xinbo Zou, Jiaxiang Chen, Yang Shi, Kailin Ren   +6 more
doaj   +1 more source

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Alessandro Di Costanzo, Michele Riccio, Luca Maresca, Giovanni Breglio, Andrea Irace   +5 more
doaj   +1 more source

Simulation and optimization of HEMTs [PDF]

2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA), 2016
8 pages, 19 ...
Hesameddin Ilatikhameneh, Reza Ashrafi, Sina Khorasani   +2 more
openaire   +3 more sources

Epitaxial Lift-Off of Flexible GaN-Based HEMT Arrays with Performances Optimization by the Piezotronic Effect

Nano-Micro Letters, 2021
High-electron-mobility transistors (HEMTs) are a promising device in the field of radio frequency and wireless communication. However, to unlock the full potential of HEMTs, the fabrication of large-size flexible HEMTs is required. Herein, a large-sized (
Xin Chen, Jianqi Dong, Chenguang He, Longfei He, Zhitao Chen, Shuti Li, Kang Zhang, Xingfu Wang, Zhong Lin Wang   +8 more
doaj   +1 more source

Gate Failure Behavior and Mechanism of AlGaN/GaN HEMTs Under Transmission Line Pulsed Stress

IEEE Journal of the Electron Devices Society, 2021
The failure behavior and the corresponding physical mechanism of the AlGaN/GaN high electron mobility transistors (HEMTs) under transmission line pulse (TLP) stress were investigated in this paper.
Y. Ren, Y. Q. Chen, C. Liu, X. B. Xu, R. Gao, D. Y. Lei, P. Lai, Y. Huang, J. He   +8 more
doaj   +1 more source

Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs

AIP Advances, 2022
In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). The source–gate–drain access regions with both AlBN and AlN amorphous dielectric films deposited by pulsed laser
Jiantao Cheng, Fengfeng Liu, Chunping Jiang, Wenqing Zhu   +3 more
doaj   +1 more source