Results 11 to 20 of about 1,513 (185)

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Holos, 2019
AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and
Masoud Sabaghi
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Simulation and optimization of HEMTs [PDF]

2016 3rd International Conference on Advances in Computational Tools for Engineering Applications (ACTEA), 2016
8 pages, 19 ...
Hesameddin Ilatikhameneh, Reza Ashrafi, Sina Khorasani   +2 more
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Effect of amorphous ternary AlBN passivations on the performance of AlGaN/GaN HEMTs

AIP Advances, 2022
In this article, an amorphous ternary AlBN dielectric passivation layer is proposed for GaN/AlGaN high-electron mobility transistors (HEMTs). The source–gate–drain access regions with both AlBN and AlN amorphous dielectric films deposited by pulsed laser
Jiantao Cheng, Fengfeng Liu, Chunping Jiang, Wenqing Zhu   +3 more
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Hot electron modelling of HEMTs [PDF]

7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001
The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole, Christopher M. Snowden, Shahzad Hussain   +2 more
openaire   +1 more source

Research Progress in Capping Diamond Growth on GaN HEMT: A Review

Crystals, 2023
With the increased power density of gallium nitride (GaN) high electron mobility transistors (HEMTs), effective cooling is required to eliminate the self-heating effect.
Yingnan Wang, Xiufei Hu, Lei Ge, Zonghao Liu, Mingsheng Xu, Yan Peng, Bin Li, Yiqiu Yang, Shuqiang Li, Xuejian Xie, Xiwei Wang, Xiangang Xu, Xiaobo Hu   +12 more
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Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs [PDF]

Journal of Electrical and Computer Engineering Innovations, 2019
Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of ...
Z. Kordrostami, S. Hamedi, F. Khalifeh
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An Accurate Approach to Develop Small Signal Circuit Models for AlGaN/GaN HEMTs Using Rational Functions and Dependent Current Sources

IEEE Journal of the Electron Devices Society, 2022
In this paper, a technique to develop small signal circuit (SSC) models of AlGaN/GaN high electron mobility transistors (HEMTs) using dependent current sources is presented.
Aakash Jadhav, Takashi Ozawa, Ali Baratov, Joel T. Asubar, Masaaki Kuzuhara, Akio Wakejima, Shunpei Yamashita, Manato Deki, Shugo Nitta, Yoshio Honda, Hiroshi Amano, Sourajeet Roy, Biplab Sarkar   +12 more
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Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

Nanoscale Research Letters, 2017
We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, Ray-Ming Lin   +7 more
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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines, 2021
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen   +6 more
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Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

AIP Advances, 2014
Trap states in Al0.55Ga0.45N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant
Jie-Jie Zhu, Xiao-Hua Ma, Bin Hou, Wei-Wei Chen, Yue Hao   +4 more
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