Results 11 to 20 of about 15,181 (229)
Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN-on-Si Quantum Wells. [PDF]
Adv Sci (Weinh)This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Chung JY +12 more
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Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs [PDF]
Journal of Electrical and Computer Engineering Innovations, 2019 Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.Methods: Two developed designs of ...
Z. Kordrostami, S. Hamedi, F. Khalifeh
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Micromachines, 2023 In this paper, AlGaN/GaN high-electron-mobility transistors (HEMTs) with ohmic etching patterns (OEPs) “fabricated to improve device radio frequency (RF) performance for Ka-band applications” are reported.
Ming-Wen Lee +4 more
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Electronics Letters, 2021 This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate.
Qiang Ma, Yuji Ando, Akio Wakejima
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Hot electron modelling of HEMTs [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole +2 more
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Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors
Micromachines, 2023 As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang +5 more
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Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Crystals, 2021 We report the electrical characteristics of GaN-based high electron mobility transistors (HEMTs) operated on various substrates/films. For the detailed investigation and comparison of the electrical properties of GaN-based HEMTs according to the ...
Sung-Jae Chang +10 more
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AlN/GaN-based MOS-HEMT technology: processing and device results [PDF]
, 2011 Process development of AlN/GaN MOS-HEMTs is presented, along with issues and problems concerning the fabrication processes. The developed technology uses thermally grown Al<sub>2</sub>O<sub>3</sub> as a gate dielectric and surface
Wasige, E. +5 more
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50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node [PDF]
, 2006 Continued research into the development of III-V high-electron mobility transistors (HEMTs), specifically the minimization of the device gate length, has yielded the fastest performance reported for any three terminal devices to date.
Elgaid, Khaled +11 more
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AIP Advances, 2021 AlGaN/GaN high electron mobility transistors (HEMTs) possess excellent electrical and thermal properties. In this study, we examined the electrical performance of AlGaN/GaN HEMTs to clarify the operational mechanism of the device with temperature ...
Dae-Young Jeon +3 more
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