Results 21 to 30 of about 9,883 (230)

Breaking Through the Multi-Mesa-Channel Width Limited of Normally Off GaN HEMTs Through Modulation of the Via-Hole-Length

Nanoscale Research Letters, 2017
We present new normally off GaN high-electron-mobility transistors (HEMTs) that overcome the typical limitations in multi-mesa-channel (MMC) width through modulation of the via-hole-length to regulate the charge neutrality screen effect. We have prepared
Cheng-Yen Chien, Wen-Hsin Wu, Yao-Hong You, Jun-Huei Lin, Chia-Yu Lee, Wen-Ching Hsu, Chieh-Hsiung Kuan, Ray-Ming Lin   +7 more
doaj   +1 more source

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines, 2021
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen   +6 more
doaj   +1 more source

Dynamic Transconductance Dispersion Characterization of Channel Hot-Carrier Stressed 0.25μm AlGaN/GaN HEMTs [PDF]

, 2012
Using the dynamic transconductance frequency dispersion technique, we characterize unstressed and hot-electron stressed short-channel AlGaN/GaN high-electron-mobility transistors.
Kuball, M., Silvestri, M., Uren, M. J.
core   +1 more source

Modeling Power GaN-HEMTs Using Standard MOSFET Equations and Parameters in SPICE

, 2021
The device library in the standard circuit simulator (SPICE) lacks a gallium nitride based high-electron-mobility-transistor (GaN-HEMT) model, required for the design and verification of power-electronic circuits.
Faisal Mohd-Yasin, Dimitrijev, Sima, Pande, Peyush, Jadli, Utkarsh, Hamid Amini Moghadam, Sima Dimitrijev, Utkarsh Jadli, Chaturvedi, Mayank, Mohd-Yasin, Faisal, Moghadam, Hamid Amini, Mayank Chaturvedi, Peyush Pande, https://orcid.org/   +12 more
core   +1 more source

Investigation of trap states in high Al content AlGaN/GaN high electron mobility transistors by frequency dependent capacitance and conductance analysis

AIP Advances, 2014
Trap states in Al0.55Ga0.45N/GaN Schottky-gate high-electron-mobility transistors (S-HEMTs) and Al2O3/Al0.55Ga0.45N/GaN metal-oxide-semiconductor HEMTs (MOS-HEMTs) were investigated with conductance method in this paper. Surface states with time constant
Jie-Jie Zhu, Xiao-Hua Ma, Bin Hou, Wei-Wei Chen, Yue Hao   +4 more
doaj   +1 more source

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

IEEE Journal of the Electron Devices Society, 2019
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang   +7 more
doaj   +1 more source

Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential [PDF]

APL Electronic Devices
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V.
Stefan Schulz, David Moran, Jayjit Mukherjee, Peter James Parbrook, Pietro Pampili, Badal Mondal   +5 more
doaj   +1 more source

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate

Electronics Letters, 2021
This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate.
Qiang Ma, Yuji Ando, Akio Wakejima
doaj   +1 more source

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric

Micromachines, 2022
In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs).
Xiaohui Gao, Hui Guo, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +8 more
doaj   +1 more source

DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications [PDF]

, 2009
A broadband low-loss, ultra-low-power consumption transmit/ receive switch using high-performance 50 nm gate-length metamorphic high electron mobility transistors (MHEMTs) is presented.
Hwang, C.J., Elgaid, Khaled, Elgaid, K., Elgaid, K, Thayne, I. G., Hwang, C. J., Holland, M., Hwang, C.-J., Thayne, I.G., Chong, Harold, Chong, H.M.H.   +10 more
core   +1 more source