Results 21 to 30 of about 1,513 (185)

Interplay of carrier density and mobility in Al-rich (Al,Ga)N-channel HEMTs: Impact on high-power device performance potential [PDF]

APL Electronic Devices
Despite considerable advancements, high electron mobility transistors (HEMTs) based on gallium nitride (GaN) channels remain largely limited to power applications below 650 V.
Stefan Schulz, David Moran, Jayjit Mukherjee, Peter James Parbrook, Pietro Pampili, Badal Mondal   +5 more
doaj   +1 more source

Effect of Hot Electron Stress on AlGaN/GaN HEMTs of Hydrogen Poisoning

IEEE Journal of the Electron Devices Society, 2019
We have investigated the effect of hot electron stress on the electrical properties of AlGaN/GaN high electron mobility transistors (HEMTs) of hydrogen poisoning.
J. He, Y. Q. Chen, Z. Y. He, Y. F. En, C. Liu, Y. Huang, Z. Li, M. H. Tang   +7 more
doaj   +1 more source

Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate

Electronics Letters, 2021
This paper investigates the electron trapping behaviour after bias stress in GaN high‐electron‐mobility transistors (HEMTs) fabricated on GaN substrate.
Qiang Ma, Yuji Ando, Akio Wakejima
doaj   +1 more source

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao   +7 more
doaj   +1 more source

Low Leakage Current and High Breakdown Field AlGaN/GaN MIS-HEMTs Using PECVD-SiNx as a Gate Dielectric

Micromachines, 2022
In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs).
Xiaohui Gao, Hui Guo, Rui Wang, Danfeng Pan, Peng Chen, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng   +8 more
doaj   +1 more source

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

Micromachines
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer.
Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

IEEE Journal of the Electron Devices Society, 2019
We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates.
K. Ranjan, S. Arulkumaran, G. I. Ng, A. Sandupatla   +3 more
doaj   +1 more source

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Nanoscale Research Letters, 2020
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

IEEE Journal of the Electron Devices Society, 2019
The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien   +6 more
doaj   +1 more source

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source