Time evolution of off-state degradation of AlGaN/GaN high electron-mobility transistors [PDF]
, 2014 The evolution of AlGaN/GaN high electron-mobility transistors under off-state stress conditions is studied by gate leakage current (Ig) monitoring, electroluminescence (EL), and atomic force microscope (AFM) imaging at room temperature.
Kuball, Martin H H +3 more
core +2 more sources
Micromachines, 2022 In this paper, SiNx film deposited by plasma-enhanced chemical vapor deposition was employed as a gate dielectric of AlGaN/GaN high electron mobility transistors (HEMTs).
Xiaohui Gao +8 more
doaj +1 more source
Investigation into intermodulation distortion in HEMTs using a quasi-2-D physical model [PDF]
, 2001 The need for both linear and efficient pseudomorphic high electron-mobility transistors (pHEMTs) for modern wireless handsets necessitates a thorough understanding of the origins of intermodulation distortion at the device level.
Miles, R.E. +3 more
core +1 more source
Hot electron modelling of HEMTs [PDF]
7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427), 2001 The hot‐electron two‐dimensional HEMT with recessed gate is modelled by solving the Poisson, current continuity and energy transport equations consistently with the Schrödinger equation using a finite difference scheme. New expressions are used for the energy densities inside and outside the quantum wells.
Eric A. B. Cole +2 more
openaire +1 more source
Iron-induced deep-level acceptor center in GaN/AlGaN high electron mobility transistors:Energy level and cross section [PDF]
, 2013 Dynamic transconductance dispersion measurements coupled with device physics simulations were used to study the deep level acceptor center in iron-doped AlGaN/GaN high electron mobility transistors (HEMT).
Kuball, M., Silvestri, M., Uren, M. J.
core +2 more sources
Reliability Testing of AlGaN/GaN HEMTs Under Multiple Stressors [PDF]
, 2011 We performed an experiment on AlGaN/GaN HEMTs with high voltage and high power as stressors. We found that devices tested under high power generally degraded more than those tested under high voltage.
Christiansen, Bradley D. +6 more
core +2 more sources
Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]
, 2014 Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Caesar, Markus +6 more
core +3 more sources
Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond
IEEE Journal of the Electron Devices Society, 2019 We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates.
K. Ranjan +3 more
doaj +1 more source
Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures [PDF]
, 1996 The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by ...
Davidow, J. +5 more
core +1 more source
Micromachines, 2023 The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li +10 more
doaj +1 more source