Results 31 to 40 of about 15,181 (229)

Investigation of Self-Heating Effect on DC and RF Performances in AlGaN/GaN HEMTs on CVD-Diamond

IEEE Journal of the Electron Devices Society, 2019
We have investigated the self-heating effect on DC and RF performances of identically fabricated AlGaN/GaN HEMTs on CVD-Diamond (GaN/Dia) and Si (GaN/Si) substrates.
K. Ranjan, S. Arulkumaran, G. I. Ng, A. Sandupatla   +3 more
doaj   +1 more source

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Micromachines, 2021
Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity.
Yu-Chun Huang, Hsien-Chin Chiu, Hsuan-Ling Kao, Hsiang-Chun Wang, Chia-Hao Liu, Chong-Rong Huang, Si-Wen Chen   +6 more
doaj   +1 more source

Gate Geometry-Dependent Thermal Impedance of Depletion Mode HEMTs

, 2023
Although the steady-state thermal behavior of GaN-based high-electron-mobility transistors (HEMTs) has been studied extensively, significantly fewer studies have considered their thermal capacitance. In this article, frequency domain characterization has
Rodriguez, Raul, Raúl Rodríguez, Antonio Lazaro, Gonzalez, Benito, Benito González, Lazaro, Antonio   +5 more
core   +1 more source

Improved DC and RF Characteristics of GaN-Based Double-Channel HEMTs by Ultra-Thin AlN Back Barrier Layer

Micromachines
In order to improve the off-state and breakdown characteristics of double-channel GaN HEMTs, an ultra-thin barrier layer was chosen as the second barrier layer.
Qian Yu, Chunzhou Shi, Ling Yang, Hao Lu, Meng Zhang, Xu Zou, Mei Wu, Bin Hou, Wenze Gao, Sheng Wu, Xiaohua Ma, Yue Hao   +11 more
doaj   +1 more source

Hydrodynamische Modellierung von AlGaN/GaN HEMTs

, 2022
S.273-276For the needs of high electron mobility transistors (HEMTs) optimization a reliable software simulation tool is required. Due to the high electric field in the device channel a hydrodynamic approach is used to properly model the electron ...
Vitanov, S., Quay, Rüdiger, Palankovski, V., Murad, S., Rödle, T., Selberherr, S.   +5 more
core   +1 more source

A cost-effective technology to improve power performance of nanoribbons GaN HEMTs

, 2022
International audienceA cost-effective fabrication process is developed to improve the power performance of AlGaN/GaN High Electron Mobility Transistors (HEMTs).
Salvestrini, Jean-Paul, Bourzgui, Nour Eddine, A. Soltani, Khediri, Abdelkrim, A. Khediri, H. A. Barkad, Barkad, Hassan Ali, Ougazzaden, Abdallah, Hassan, Maher,, Benbakhti, Brahim, B. Benbakhti, Gerbedoen, J.-C., J.-P. Salvestrini, Soltani, Ali, J.-C. Gerbedoen, N. E. Bourzgui, H. Maher, A. Ougazzaden   +17 more
core   +1 more source

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Nanoscale Research Letters, 2020
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

Investigations on Driver and Layout for Paralleled GaN HEMTs in Low Voltage Application

IEEE Access, 2019
Gallium nitride is becoming more popular in low-voltage applications. Gallium nitride (GaN) high electron mobility transistors (HEMTs) has positive temperature feature. It makes parallel application feasible for GaN HEMTs. Meanwhile, paralleled GaN HEMTs
Yajing Zhang, Jianguo Li, Jiuhe Wang
doaj   +1 more source

Analysis of transconductance characteristic of AlGaN/GaN HEMTs with graded AlGaN layer

, 2014
A theoretical study of transconductance characteristics (gm − Vgs profile) of AlGaN/GaN high electron mobility transistors (HEMTs) with a graded AlGaN layer is given in this paper.
Hongling Xiao, Enchao Peng, Cuimei Wang, Peng, EC, Lijuan Jiang, Xiaoliang Wang, Qu, SQ, Chun Feng, Kang, H, He Kang, Wang, ZG, Shenqi Qu, Wang, CM, Yin, HB, Xun Hou, Hou, X, Jiang, LJ, Xiao, HL, Hong Chen, Wang, XL, Feng, C, Chen, H, Haibo Yin, Zhanguo Wang   +23 more
core   +1 more source

Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices

IEEE Access, 2020
In this paper, the GaN-based MIS-HEMTs with Si3N4 single-layer passivation, Al2O3/SiNx bilayer passivation, and ZrO2/SiNx bilayer passivation are demonstrated.
Yutao Cai, Yang Wang, Ye Liang, Yuanlei Zhang, Wen Liu, Huiqing Wen, Ivona Z. Mitrovic, Cezhou Zhao   +7 more
doaj   +1 more source