Results 31 to 40 of about 1,513 (185)

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, EarlyView.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Demonstration of GaN‐Based HEMTs Using Extremely Thin h‐BN Passivation Layer and Air Spacer for the RF Performance Improvement

Advanced Electronic Materials
GaN‐based high electron mobility transistors (HEMTs) is demonstrated using an extremely thin (≈ 5 nm) h‐BN passivation layer and air spacer, for the first time.
Sung‐Jae Chang, Seokho Moon, Junhyung Jeong, Hyun‐Wook Jung, Jawon Kim, Semi Im, Jaesub Song, Changuk Ji, Seonghyeon Pak, Il‐Gyu Choi, Youn‐Sub Noh, Seong‐Il Kim, Sang‐Heung Lee, Ho‐Kyun Ahn, Dong‐Min Kang, Jong Kyu Kim, Jong‐Won Lim   +16 more
doaj   +1 more source

Low‐Dimensional Materials and Van Der Waals Heterostructures for Energy Application: A Comprehensive Review

ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.
Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam, Sajjad Ali, Pir Muhammad Ismail, ABM Sharif Hossain   +3 more
wiley   +1 more source

Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies, 2023
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior.
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley   +5 more
doaj   +1 more source

Ferroelectricity and Ferroionic Dynamics in Two‐Dimensional CuInP2S6

Information &Functional Materials, EarlyView.
The coupled dynamics of ferroelectric polarization and Cu‐ion migration endow CuInP2S6 with unique ferroionic functionalities. This review connects structure, switching mechanisms, and device applications to provide a unified perspective on two‐dimensional ferroionic materials.
Shangsheng Li, Shiyu Wang, Xiongfeng Wang, Qinglin Du, Ruochen Shangguan, Guoqiang Xi, Lin Wang, Wugang Liao   +7 more
wiley   +1 more source

Care‐Based Disruption, Creative Practice and Collaborative Empathetic Histories

History, EarlyView.
Abstract This Forum essay examines the value of collaboration when creatively engaging with history as a means of developing empathy, care, and understanding. Creative and collaborative histories provide space to address the harmful misconceptions and preconceptions entangled in capitalist and colonial narratives.
SIERRA MCKINNEY, KATHERINE COOK
wiley   +1 more source

Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

Micromachines, 2023
GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance.
Kun-Ming Chen, Chuang-Ju Lin, Chia-Wei Chuang, Hsuan-Cheng Pai, Edward-Yi Chang, Guo-Wei Huang   +5 more
doaj   +1 more source

Effect of Phosphate Fertilization and Cutting Date Improves Nutritional Status and Productive Parameters of a Tropical Forage Legume

Legume Science, Volume 8, Issue 3, September 2026.
ABSTRACT The use of chemical fertilizers is economically and environmentally costly to produce and apply. Therefore, optimized fertilizer use is critical to increase or maintain crop yields. We evaluated the productive and nutritional characteristics of the Stylosanthes cv “Campo Grande” submitted to different cutting date and phosphate fertilization ...
Daniele de Jesus Ferreira, Higo Gustavo da Silva Rocha, Aline Lima dos Anjos, Henrique Nunes Parente, Michelle de Oliveira Maia Parente, Rosane Cláudia Rodrigues, Ricardo Martins Araújo Pinho, Edson Mauro Santos, Anny Graycy Vasconcelos de Oliveira Lima, Thiago Vinícus Costa Nascimento, Francisca Claudia da Silva de Sousa, Fleming Sena Campos, Francisco Naysson de Sousa Santos, Hactus Souto Cavalcanti, Dilier Olivera‐Viciedo, Anderson de Moura Zanine   +15 more
wiley   +1 more source