Results 1 to 10 of about 12,413 (305)

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE Journal of the Electron Devices Society
This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices.
Pingyu Cao, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue   +5 more
doaj   +1 more source

Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2017
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device structure
Jun Wu, Lin-Qing Zhang, Yao Yao, Min-Zhi Lin, Zhi-Yuan Ye, Peng-Fei Wang   +5 more
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Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Micromachines, 2022
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate ...
Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub   +4 more
doaj   +1 more source

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Advanced Electronic Materials, 2023
A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study.
Tao Zhang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye   +4 more
doaj   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
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Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Nanophotonics, 2023
We experimentally investigated the asymmetric dual-grating-gate plasmonic terahertz (THz) detector based on an InGaAs-channel high-electron-mobility transistor (HEMT) in the gate-readout configuration.
Satou Akira, Negoro Takumi, Narita Kenichi, Hosotani Tomotaka, Tamura Koichi, Tang Chao, Lin Tsung-Tse, Retaux Paul-Etienne, Takida Yuma, Minamide Hiroaki, Suemitsu Tetsuya, Otsuji Taiichi   +11 more
doaj   +1 more source

Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier

Metrology
GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr, Moshe Azoulay, Gady Golan, Arnold Burger   +3 more
doaj   +1 more source

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_x Layer

IEEE Journal of the Electron Devices Society, 2023
This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band.
Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura   +7 more
doaj   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source