Results 1 to 10 of about 48,911 (290)

Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor [PDF]

Micromachines, 2023
A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang, Yanrong Cao, Xinxiang Zhang, Chuan Chen, Linshan Wu, Maodan Ma, Hanghang Lv, Ling Lv, Xuefeng Zheng, Wenchao Tian, Xiaohua Ma, Yue Hao   +11 more
doaj   +2 more sources

An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency [PDF]

Micromachines, 2021
An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper.
Hujun Jia, Xiaowei Wang, Mengyu Dong, Shunwei Zhu, Yintang Yang   +4 more
doaj   +2 more sources

Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses [PDF]

Scientific Reports, 2022
Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant.
Jingtao Zhao, Quanyou Chen, Chaoyang Chen, Zhidong Chen, Zhong Liu, Gang Zhao   +5 more
doaj   +2 more sources

High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate [PDF]

Micromachines
In this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance.
Yinhe Wu, Xingchi Ma, Longyang Yu, Xin Feng, Shenglei Zhao, Weihang Zhang, Jincheng Zhang, Yue Hao   +7 more
doaj   +2 more sources

Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses [PDF]

Scientific Reports
As the electromagnetic environment becomes increasingly complex and power density continues to increase, the reliability and safe operation of gallium nitride (GaN) high electron mobility transistors (HEMTs), which are widely used in the field of high ...
Jingtao Zhao, Gang Zhao, Quanyou Chen, Zidong Chen, Lei Cao, Xixi Feng, Zhong Liu, Chaoyang Chen   +7 more
doaj   +2 more sources

Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature [PDF]

Micromachines
We have investigated the electrical properties and reliability of AlGaN/GaN high electron mobility transistors (HEMT) under high-temperature RF overdrive stress.
Chang Liu, Yiqiang Chen, Yuhan Xie, Hongxia Liu, Zongqi Cai   +4 more
doaj   +2 more sources

Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution [PDF]

Nano-Micro Letters
Highlights Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P83.4As0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site.
Rui Zhai, Zhuorui Wen, Xuewen Zhao, Junyi She, Mengyue Gu, Fanqi Bu, Chang Huang, Guodong Meng, Yonghong Cheng, Jinying Zhang   +9 more
doaj   +2 more sources

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures [PDF]

Nature Communications, 2018
Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the ...
L. L. Lev, I. O. Maiboroda, M.-A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov   +12 more
doaj   +2 more sources

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis [PDF]

ACS Omega
Bushra Qureshi, Abdullah G. Alharbi, Rashid Ayub, Sajad A. Loan   +3 more
doaj   +2 more sources

Multi-objective optimization of the high electron mobility transistor

International Journal for Simulation and Multidisciplinary Design Optimization, 2023
In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak   +3 more
doaj   +1 more source