Results 11 to 20 of about 48,911 (290)
AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform
AIP Advances, 2018 In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo +7 more
doaj +2 more sources
An AlN/Al0.85Ga0.15N high electron mobility transistor
Applied Physics Letters, 2016 An AlN barrier high electron mobility transistor (HEMT) based on the AlN/Al0.85Ga0.15N heterostructure was grown, fabricated, and electrically characterized, thereby extending the range of Al composition and bandgap for AlGaN channel HEMTs. An etch and regrowth procedure was implemented for source and drain contact formation. A breakdown voltage of 810
Albert G. Baca +8 more
openaire +4 more sources
Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface. [PDF]
ACS Appl Mater Interfaces, 2023 Hospodková A +8 more
europepmc +2 more sources
Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
Applied Sciences, 2021 The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT).
Abdelhamid Amar +2 more
doaj +1 more source
AIP Advances, 2023 In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang +3 more
doaj +1 more source
AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency
Electronics Letters, 2021 A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios +7 more
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Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO2 Detection
Chemosensors, 2023 Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal ...
Zhixiang Hu +8 more
doaj +1 more source
Modelling of GaN high electron mobility transistor on diamond substrate
IET Microwaves, Antennas & Propagation, 2021 A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour
Anwar Jarndal, Xuekun Du, Yuehang Xu
doaj +1 more source
International Journal for Simulation and Multidisciplinary Design Optimization, 2022 The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid +2 more
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AlGaN High Electron Mobility Transistor for High-Temperature Logic
Journal of Microelectronics and Electronic Packaging, 2022 We report on AlGaN HEMT-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal
Brianna Klein +13 more
openaire +1 more source