Results 11 to 20 of about 7,654 (149)

Inverted-Type InAlAs/InAs High-Electron-Mobility Transistor with Liquid Phase Oxidized InAlAs as Gate Insulator [PDF]

Materials, 2021
Kuan-Wei Lee, Yu-Chi Chang, Wang Yeong-Her   +2 more
exaly   +2 more sources

Multi-objective optimization of the high electron mobility transistor

International Journal for Simulation and Multidisciplinary Design Optimization, 2023
In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak   +3 more
doaj   +1 more source

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

Applied Sciences, 2021
The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT).
Abdelhamid Amar, Bouchaïb Radi, Hami El Abdelkhalak   +2 more
doaj   +1 more source

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Electronics Letters, 2021
A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, Holger Kalisch, Andrei Vescan, Renato Negra   +7 more
doaj   +1 more source

Modelling of GaN high electron mobility transistor on diamond substrate

IET Microwaves, Antennas & Propagation, 2021
A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour
Anwar Jarndal, Xuekun Du, Yuehang Xu
doaj   +1 more source

Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO₂ Detection

Chemosensors, 2023
Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal ...
Zhixiang Hu, Licheng Zhou, Long Li, Binzhou Ying, Yunong Zhao, Peng Wang, Huayao Li, Yang Zhang, Huan Liu   +8 more
doaj   +1 more source

Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

International Journal for Simulation and Multidisciplinary Design Optimization, 2022
The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid, Radi Bouchaïb, El Hami Abdelkhalak   +2 more
doaj   +1 more source

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

IEEE Journal of the Electron Devices Society, 2023
A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal quality and surface morphology of the epitaxial material were
Yan Gu, Xuecheng Jiang, Naiyan Lu, Jiarui Guo, Yushen Liu, Xifeng Yang, Weiying Qian, Xiangyang Zhang, Guoqing Chen, Tao Tao, Guofeng Yang   +10 more
doaj   +1 more source

Gallium nitride high electron mobility transistor with an effective graphene-based heat removal system

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to
V. S. Volcheck, I. Yu. Lovshenko, V. T. Shandarovich, Dao Dinh Ha   +3 more
doaj   +1 more source