Electrical Properties and Reliability of AlGaN/GaN High Electron Mobility Transistor under RF Overdrive Stress at High Temperature [PDF]
MicromachinesWe have investigated the electrical properties and reliability of AlGaN/GaN high electron mobility transistors (HEMT) under high-temperature RF overdrive stress.
Chang Liu +4 more
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GaAs Nanomembranes in the High Electron Mobility Transistor Technology [PDF]
Materials, 2021 A 100 nm MOCVD-grown HEMT AlGaAs/InGaAs/GaAs heterostructure nanomembrane was released from the growth GaAs substrate by ELO using a 300 nm AlAs layer and transferred to sapphire. The heterostructure contained a strained 10 nm 2DEG In0.23Ga0.77As channel with a sheet electron concentration of 3.4 × 1012 cm−2 and Hall mobility of 4590 cm2V−1s−1, which ...
Dagmar Gregušová +8 more
openaire +3 more sources
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor [PDF]
Micromachines, 2023 A GaN high-electron-mobility transistor (HEMT) was simulated using the semiconductor simulation software Silvaco TCAD in this paper. By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects ...
Zhiheng Wang +11 more
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Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)
Applied Sciences, 2021 The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT).
Abdelhamid Amar +2 more
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Modelling of GaN high electron mobility transistor on diamond substrate
IET Microwaves, Antennas & Propagation, 2021 A reliable small‐signal modelling approach has been developed and applied on GaN‐on‐diamond high electron mobility transistor. The extrinsic elements' extraction procedure was improved to provide an accurate characterization for the quasistatic behaviour
Anwar Jarndal, Xuekun Du, Yuehang Xu
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An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency [PDF]
Micromachines, 2021 An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper.
Hujun Jia +4 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to
V. S. Volcheck +3 more
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High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate [PDF]
MicromachinesIn this paper, it is demonstrated that the AlGaN high electron mobility transistor (HEMT) based on silicon wafer exhibits excellent high-temperature performance.
Yinhe Wu +7 more
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Interference effects in GaN high electron mobility transistor power amplifier induced by microwave pulses [PDF]
Scientific Reports, 2022 Owing to the rapid development of wireless communication, radar and pulse power technology, the electromagnetic environment faced by electronic systems is increasingly complex and the intensity of electromagnetic field can be significant.
Jingtao Zhao +5 more
doaj +2 more sources
Damage effects in GaN high electron mobility transistor power amplifier induced by high power microwave pulses [PDF]
Scientific ReportsAs the electromagnetic environment becomes increasingly complex and power density continues to increase, the reliability and safe operation of gallium nitride (GaN) high electron mobility transistors (HEMTs), which are widely used in the field of high ...
Jingtao Zhao +7 more
doaj +2 more sources