Results 21 to 30 of about 12,413 (305)

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures [PDF]

Nature Communications, 2018
Semiconductor heterostructures hosting two-dimensional electron gases are widely used today in high-electron-mobility transistors. Here, the authors probe the electronic structure in GaN/AlGaN, heterostructures, discovering planar anisotropy of the ...
L. L. Lev, I. O. Maiboroda, M.-A. Husanu, E. S. Grichuk, N. K. Chumakov, I. S. Ezubchenko, I. A. Chernykh, X. Wang, B. Tobler, T. Schmitt, M. L. Zanaveskin, V. G. Valeyev, V. N. Strocov   +12 more
doaj   +2 more sources

Electron Tri-Layer Enhancement Mode High-Electron-Mobility Transistor: Design and Analysis [PDF]

ACS Omega
Bushra Qureshi, Abdullah G. Alharbi, Rashid Ayub, Sajad A. Loan   +3 more
doaj   +2 more sources

Multi-objective optimization of the high electron mobility transistor

International Journal for Simulation and Multidisciplinary Design Optimization, 2023
In this paper, we present a new approach to improve the thermo-mechanical performance of the HEMT (high electron mobility transistor) technology. This study aims to solve two optimization problems.
Amar Abdelhamid, El Maani Rabii, Radi Bouchaïb, El Hami Abdelkhalak   +3 more
doaj   +1 more source

Gate dielectric layer mitigated device degradation of AlGaN/GaN-based devices under proton irradiation

AIP Advances, 2023
In this study, the simulations of AlGaN/GaN-based devices, including AlGaN/GaN high electron mobility transistor (HEMT), Al2O3 metal–oxide–semiconductor high electron mobility transistor (MOSHEMT), and SiNx metal–insulator–semiconductor high electron ...
Lilai Jiang, Chengzhen Song, Yu-Ning Wu, Shiyou Chen   +3 more
doaj   +1 more source

AlGaN/GaN high electron mobility transistor oscillator for high temperature and high frequency

Electronics Letters, 2021
A high‐temperature 2.1 GHz oscillator based on a AlGaN/GaN high electron mobility transistor (HEMT) is successfully designed, implemented, and characterised for the first time.
Paula Palacios, Muh‐Dey Wei, Thorsten Zweipfennig, Ahmed Hamed, Carsten Beckmann, Holger Kalisch, Andrei Vescan, Renato Negra   +7 more
doaj   +1 more source

Quantum Dots-Sensitized High Electron Mobility Transistor (HEMT) for Sensitive NO₂ Detection

Chemosensors, 2023
Colloidal quantum dots (CQDs) are gaining increasing attention for gas sensing applications due to their large surface area and abundant active sites. However, traditional resistor-type gas sensors using CQDs to realize molecule recognition and signal ...
Zhixiang Hu, Licheng Zhou, Long Li, Binzhou Ying, Yunong Zhao, Peng Wang, Huayao Li, Yang Zhang, Huan Liu   +8 more
doaj   +1 more source

AlGaN High Electron Mobility Transistor for High-Temperature Logic

Journal of Microelectronics and Electronic Packaging, 2022
We report on AlGaN HEMT-based logic development, using combined enhancement- and depletion-mode transistors to fabricate inverters with operation from room temperature up to 500°C. Our development approach included: (a) characterizing temperature dependent carrier transport for different AlGaN HEMT heterostructures, (b) developing a suitable gate metal
Brianna Klein, Andrew Allerman, Albert Baca, Christopher Nordquist, Andrew Armstrong, Michael Van Heukelom, Anthony Rice, Victor Patel, Mary Rosprim, Lisa Caravello, Rebecca DeBerry, Jennifer Pipkin, Christopher Abate, Robert Kaplar   +13 more
openaire   +1 more source

Optimization based on electro-thermo-mechanical modeling of the high electron mobility transistor (HEMT)

International Journal for Simulation and Multidisciplinary Design Optimization, 2022
The electro-thermomechanical modeling study of the High Electron Mobility Transistor (HEMT) has been presented, all the necessary equations are detailed and coupled.
Amar Abdelhamid, Radi Bouchaïb, El Hami Abdelkhalak   +2 more
doaj   +1 more source

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe³⁺ Detection

IEEE Journal of the Electron Devices Society, 2023
A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal quality and surface morphology of the epitaxial material were
Yan Gu, Xuecheng Jiang, Naiyan Lu, Jiarui Guo, Yushen Liu, Xifeng Yang, Weiying Qian, Xiangyang Zhang, Guoqing Chen, Tao Tao, Guofeng Yang   +10 more
doaj   +1 more source

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +1 more source