Results 21 to 30 of about 48,911 (290)
IEEE Journal of the Electron Devices Society, 2023 A 2-mercaptobutanedioic acid modified enhancement-mode AlGaN/GaN high-electron-mobility transistor (HEMT) device with a 5-fold gate was proposed for Fe3+ specific detection. The crystal quality and surface morphology of the epitaxial material were
Yan Gu +10 more
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020 The self-heating effect is a major problem for gallium nitride electronic, optoelectronic and photonic devices. Average temperature increase and non-uniform distribution of dissipated power in the gallium nitride high electron mobility transistor lead to
V. S. Volcheck +3 more
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Micro & Nano Letters, 2021 An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou +9 more
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Electron density effects in the modulation spectroscopy of strained and lattice-matched InGaAs/InAlAs/InP high-electron-mobility transistor structures [PDF]
, 1996 The effects of the channel electron density on the interband optical transitions of strained (x=0.6 and 0.65) and lattice-matched (x=0.53) InxGa1–xAs/In0.52Al0.48As/InP high-electron-mobility transistor structures have been investigated by ...
Davidow, J. +5 more
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Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis [PDF]
ITM Web of Conferences, 2019 At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon.
Volcheck Vladislav, Stempitsky Viktor
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Tunable plasma wave resonant detection of optical beating in high electron mobility transistor [PDF]
, 2006 We report on tunable terahertz resonant detection of two 1.55 µm cw-lasers beating by plasma waves in AlGaAs/InGaAs/InP high-electron-mobility transistor.
Akwoue-Ondo, A. +6 more
core +3 more sources
Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
AIP Advances, 2020 Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed
Ryota Ochi +5 more
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Experimental and simulation study of 1D silicon nanowire transistors using heavily doped channels [PDF]
, 2017 The experimental results from 8 nm diameter silicon nanowire junctionless field effect transistors with gate lengths of 150 nm are presented that demonstrate on-currents up to 1.15 mA/m for 1.0 V and 2.52 mA/m for 1.8 V gate overdrive with an off-current
Amoroso, Salvatore M. +9 more
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Strain engineered InxGa1-xAs channel pHEMTs on virtual substrates: a simulation study [PDF]
, 1998 The impact of In<sub>x</sub>Al<sub>1-x</sub>As strain control buffers on the performance of low In content InGaAs channel pseudomorphic high electron mobility transistor p(HEMT) is investigated.
Asenov, A. +4 more
core +1 more source
Chemosensors, 2021 The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron ...
Seong-Kun Cho, Won-Ju Cho
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