Results 21 to 30 of about 7,654 (149)

High‐voltage AlInN/GaN superjunction fin‐gate high electron mobility transistor for power‐switching application

Micro & Nano Letters, 2021
An AlInN/GaN superjunction fin‐gate high electron mobility transistor (SJFin‐HEMT) is proposed in this work. A superjunction region with GaN/AlInN/GaN/AlInN/GaN structure is defined between the gate and drain, and two‐dimensional‐hole‐gas/two‐dimensional‐
Weijun Zhou, Qing Ye, Junyu Dai, Tianyu Guo, Jinqiu Zhang, Zheng Li, You Wu, Ziyu Zhao, Ziqi Zhao, Zhiheng Wei   +9 more
doaj   +1 more source

Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis [PDF]

ITM Web of Conferences, 2019
At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon.
Volcheck Vladislav, Stempitsky Viktor
doaj   +1 more source

Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor

AIP Advances, 2020
Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed
Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato, Tamotsu Hashizume   +5 more
doaj   +1 more source

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

Chemosensors, 2021
The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron ...
Seong-Kun Cho, Won-Ju Cho
doaj   +1 more source

Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

Crystals, 2023
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection.
Yujian Zhang, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, Yang Wang, Wanjun Chen, Haiqiang Jia, Hong Chen   +13 more
doaj   +1 more source

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE Journal of the Electron Devices Society
This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices.
Pingyu Cao, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue   +5 more
doaj   +1 more source

Planarized Trench Isolation of In_0.52Al_0.48As/In_0.8Ga_0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

IEEE Journal of the Electron Devices Society, 2021
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang   +4 more
doaj   +1 more source

Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2017
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device structure
Jun Wu, Lin-Qing Zhang, Yao Yao, Min-Zhi Lin, Zhi-Yuan Ye, Peng-Fei Wang   +5 more
doaj   +1 more source

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Advanced Electronic Materials, 2023
A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study.
Tao Zhang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye   +4 more
doaj   +1 more source

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Micromachines, 2022
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate ...
Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub   +4 more
doaj   +1 more source