Results 41 to 50 of about 48,911 (290)

Multi‐Operating Mode Field‐Effect Transistors Based on SnO/SnS Heterostructures and CMOS‐Like Inverter Applications

Advanced Electronic Materials, 2023
A novel SnO/SnS heterojunction grown by pulsed laser deposition for the fabrication of high‐performance transistors with changeable polarity is described in this study.
Tao Zhang, Yunze Liu, Fengzhi Wang, Xinhua Pan, Zhizhen Ye   +4 more
doaj   +1 more source

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

, 2017
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3 ...
Arehart, Aaron R., Brenner, Mark, Hwang, Jinwoo, Johnson, Jared, Joishi, Chandan, Krishnamoorthy, Sriram, Lodha, Saurabh, McGlone, Joe, Rajan, Siddharth, Xia, Zhanbo, Zhang, Yuewei   +10 more
core   +1 more source

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
doaj   +1 more source

Impact of randomly distributed dopants on Ω-gate junctionless silicon nanowire transistors [PDF]

, 2018
This paper presents experimental and simulation analysis of an Ω-shaped silicon junctionless nanowire field-effect transistor (JL-NWT) with gate lengths of 150 nm and diameter of the Si channel of 8 nm.
Asenov, Asen, Carrillo-Nuñez, Hamilton, Georgiev, Vihar P., MacLaren, Donald A., Mirza, Muhamad M., Paul, Douglas J.   +5 more
core   +1 more source

Measuring Charge Carrier Mobility of Graphene [PDF]

, 2015
This research reports measurements of electron mobility in liquid-gated graphene. Graphene field-effect transistor (GFET) biosensors are more sensitive to changes in external fields when the mobility is high; therefore increasing mobility will improve ...
Harmon, Christina A.
core   +1 more source

The nature of localization in graphene under quantum Hall conditions

, 2009
Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle localization [3]
A Deshpande, A Struck, A Yacoby, A. Yacoby, AH Castro Neto, AK Geim, AL Efros, ALC Pereira, B Huckestein, BY-K Hu, F Schedin, G Li, G. Ulbricht, J Alicea, J Martin, J-H Chen, J. H. Smet, J. Martin, JG Checkelsky, JK Jain, K Nomura, K. von Klitzing, KI Bolotin, KS Novoselov, KS Novoselov, KS Novoselov, L Sheng, MJ Yoo, MM Fogler, N. Akerman, NB Brandt, PM Ostrovsky, S Adam, S Ilani, T. Lohmann, W Zhu, X Du, Y Barlas, Y Zhang, Y-W Tan   +39 more
core   +1 more source

50-nm T-gate metamorphic GaAs HEMTs with f_T of 440 GHz and noise figure of 0.7 dB at 26 GHz [PDF]

, 2005
GaAs-based transistors with the highest f/sub T/ and lowest noise figure reported to date are presented in this letter. A 50-nm T-gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As metamorphic high-electron mobility transistors (mHEMTs) on a GaAs
Elgaid, K., Holland, M., McLelland, H., Moran, D.A.J., Stanley, C.R., Thayne, I.G.   +5 more
core   +1 more source

Rational Fine‐Tuning of MOF Pore Metrics: Enhanced SO2 Capture and Sensing with Optimal Multi‐Site Interactions

Advanced Functional Materials, EarlyView.
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing, Abdulrahman Mohabbat, István Boldog, Jens Möllmer, Marcus Lange, Yulyan Haiduk, Tobias Heinen, Vladimir Pankov, Oliver Weingart, Christoph Janiak   +9 more
wiley   +1 more source

Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Nanophotonics, 2023
We experimentally investigated the asymmetric dual-grating-gate plasmonic terahertz (THz) detector based on an InGaAs-channel high-electron-mobility transistor (HEMT) in the gate-readout configuration.
Satou Akira, Negoro Takumi, Narita Kenichi, Hosotani Tomotaka, Tamura Koichi, Tang Chao, Lin Tsung-Tse, Retaux Paul-Etienne, Takida Yuma, Minamide Hiroaki, Suemitsu Tetsuya, Otsuji Taiichi   +11 more
doaj   +1 more source