Results 41 to 50 of about 7,654 (149)

Study of MoN gate impact on GaN high electron mobility transistor

Electronics Letters
In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions.
Lixing Zhang, BeiBei Lv, Xu Ding, Faxin Yu, Jiongjiong Mo   +4 more
doaj   +1 more source

Violet Arsenic Phosphorus: Switching p-Type into High Performance n-Type Semiconductor by Arsenic Substitution

Nano-Micro Letters
Highlights Violet arsenic phosphorus (VP-As) single crystals were synthesized and characterized by single crystal X-ray diffraction to be P83.4As0.6 (CSD-2408761), the P12 is occupied by arsenic/phosphorus as a mixed occupancy site.
Rui Zhai, Zhuorui Wen, Xuewen Zhao, Junyi She, Mengyue Gu, Fanqi Bu, Chang Huang, Guodong Meng, Yonghong Cheng, Jinying Zhang   +9 more
doaj   +1 more source

Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomaterials,
V. S. Volcheck, V. R. Stempitsky
doaj   +1 more source

Modeling of high electron mobility transistors

Технологія та конструювання в електронній апаратурі, 2003
The paper considers issues of modeling high electron mobility transistors (HEMT). The requirements for HEMT models are outlined. The most common types of models are described: small-signal, noise, nonlinear, and distributed.
P. A. Emtsev
doaj  

Analysis and improvement of self-heating effect based on GaN HEMT devices

Materials Research Express, 2022
Gallium nitride high electron mobility transistor (GaN HEMT) applications in high-power and high-frequency environments can lead to high device temperatures due to the self-heating effect, thus limiting device performance and reliability.
Zhipeng Zuo, Naiyun Tang, Hui Chen
doaj   +1 more source

3 kV monolithic bidirectional GaN HEMT on sapphire

Applied Physics Express
3 kV breakdown voltage was demonstrated in monolithic bidirectional Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) having potential applications in 1200 V or 1700 V class power converters. The on-resistance of the fabricated transistors
Md Tahmidul Alam, Swarnav Mukhopadhyay, Md Mobinul Haque, Shubhra S. Pasayat, Chirag Gupta   +4 more
doaj   +1 more source

Small-signal transistor model in the design of microwave low-noise amplifiers

Технологія та конструювання в електронній апаратурі, 2004
A semi-analytical method for determining the parameters of high electron mobility transistors is presented, which requires only data on the transistor’s S-parameters measured over a wide frequency range.
P. A. Yemtsev
doaj  

A GaN-based multi-threshold two-finger high electron mobility transistor with reduced third-order nonlinearity by nullification [PDF]

APL Electronic Devices
GaN-based high electron mobility transistors (HEMTs) have been proven immensely useful for high-power radio-frequency applications. While the primary focus has been power amplification and power-added efficiency, nonlinearity has not been optimized ...
D. Saha, S. Ganguly, B. Parvez, Anurag P. Chilwirwar, Nashra Khalid, Aaqib H. Sheikh, Mahalaxmi Patil   +6 more
doaj   +1 more source

Enhancing room temperature electron mobility at high carrier concentration in transparent BaSnO3/La:BaSnO3/BaSnO3 heterostructures

Journal of Materiomics
Transparent conducting oxides are increasingly important for optoelectronic and thin film transistor applications. La doped BaSnO3 is a strong candidate for its high transparency, high carrier concentration, high mobility and abundancy.
Yingli Zhang, Haopeng Du, Dirui Wu, Jinxin Ge, Jiahao Song, Mengkang Xu, Qingjiao Huang, Jiangyu Li, Changjian Li   +8 more
doaj   +1 more source

A SiC Power MOSFET Model With an Improved Description of the JFET Region

IET Power Electronics
Based on the technology computer‐aided design (TCAD) simulation, a SPICE model of vertical silicon carbide power metal‐oxide‐semiconductor field effect transistor has been proposed with an improved description of the junction‐type field effect transistor
Xiangzhen Li, Manhong Zhang, Yumeng Cai, Xiaoguang Wei, Zhibin Zhao, QingXin Meng, Zezhou Chang   +6 more
doaj   +1 more source