Results 41 to 50 of about 12,413 (305)
Moving towards high carrier mobility power devices in silicon and silicon carbide [PDF]
, 2016 This thesis reports on recent progress regarding the characterization, design and fabrication of modern power semiconductor devices in Silicon (Si) as well as in the promising wide band gap material Silicon Carbide (SiC).
Rossmann, Harald R.
core +1 more source
Advanced Functional Materials, EarlyView.Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu +17 more
wiley +1 more source
High-Mobility Pentacene-Based Thin-Film Transistors With a Solution-Processed Barium Titanate Insulator [PDF]
, 2011 —Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm2 · V−1 ...
Wei, Chia-Yu +5 more
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Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
High-Performance Silicon Nanowire Electronics [PDF]
, 2012 This thesis explores 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications via the fabrication and testing of SiNW-based ring oscillators.
Huang, Ruo-Gu
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Advanced Functional Materials, EarlyView.Two nitrogen‐doped 2D conjugated metal‐organic frameworks (2D c‐MOFs, namely Cu‐Nx‐OHBA, x = 2 or 4) are synthesized, featuring precise nitrogen incorporation via rational ligand design. The Cu‐Nx‐OHBA 2D c‐MOFs are largely tailorable by varying skeletal nitrogen density, with respect to electrical conductivity, Li‐storage capacitance, and Li‐transport
Xiangyu Li +7 more
wiley +1 more source
Linearity and mobility degradation in strained Si MOSFETs with thin gate dielectrics [PDF]
, 2010 As gate dielectrics are scaled to a few atomic layers and the channel doping is increased to mitigate short channel effects, high vertical electric fields cause considerable mobility degradation through surface-roughness scattering in silicon MOSFETs ...
O'Neill, Anthony G. +5 more
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Micromachines, 2018 AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility ...
Wojciech Wojtasiak +10 more
doaj +1 more source
Electro‐Steric Ion Confinement in Polyelectrolyte Networks for Robust Nonvolatile Artificial Synapse
Advanced Functional Materials, EarlyView.Polyelectrolyte stoichiometry governs ion transport and retention in electrolyte‐gated synaptic transistors. A PSS‐rich network creates electro‐steric ion confinement that suppresses ion back‐diffusion and stabilizes channel doping, enabling robust nonvolatile synaptic memory, linear weight updates, and low‐energy operation.
Donghwa Lee +9 more
wiley +1 more source