Results 31 to 40 of about 7,654 (149)

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Gate-readout and a 3D rectification effect for giant responsivity enhancement of asymmetric dual-grating-gate plasmonic terahertz detectors

Nanophotonics, 2023
We experimentally investigated the asymmetric dual-grating-gate plasmonic terahertz (THz) detector based on an InGaAs-channel high-electron-mobility transistor (HEMT) in the gate-readout configuration.
Satou Akira, Negoro Takumi, Narita Kenichi, Hosotani Tomotaka, Tamura Koichi, Tang Chao, Lin Tsung-Tse, Retaux Paul-Etienne, Takida Yuma, Minamide Hiroaki, Suemitsu Tetsuya, Otsuji Taiichi   +11 more
doaj   +1 more source

Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review

Crystals, 2022
A new generation of high-efficiency power devices is being developed using wide bandgap (WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to silicon. The recent interest in GaN has been piqued by its excellent material
Naeemul Islam, Mohamed Fauzi Packeer Mohamed, Muhammad Firdaus Akbar Jalaludin Khan, Shaili Falina, Hiroshi Kawarada, Mohd Syamsul   +5 more
doaj   +1 more source

Gallium Nitride High-Electron-Mobility Transistor-Based High-Energy Particle-Detection Preamplifier

Metrology
GaN High-Electron-Mobility Transistors have gained some foothold in the power-electronics industry. This is due to wide frequency bandwidth and power handling. Gallium Nitride offers a wide bandgap and higher critical field strength compared to most wide-
Gilad Orr, Moshe Azoulay, Gady Golan, Arnold Burger   +3 more
doaj   +1 more source

AlGaN/GaN high-electron-mobility transistor pH sensor with extended gate platform

AIP Advances, 2018
In this paper, we fabricated an AlGaN/GaN high electron mobility transistor (HEMT) pH sensor with an extended-gate (EG). As the carrier mobility of the transducer that is used as the biosensor is increased, the electrical signal conversion efficiency of ...
Ju-Young Pyo, Jin-Hyeok Jeon, Yumin Koh, Chu-young Cho, Hyeong-Ho Park, Kyung-Ho Park, Sang Woon Lee, Won-Ju Cho   +7 more
doaj   +1 more source

AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts

Micromachines, 2018
AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility ...
Wojciech Wojtasiak, Marcin Góralczyk, Daniel Gryglewski, Marcin Zając, Robert Kucharski, Paweł Prystawko, Anna Piotrowska, Marek Ekielski, Eliana Kamińska, Andrzej Taube, Marek Wzorek   +10 more
doaj   +1 more source

24.4 W/mm X-Band GaN HEMTs on AlN Substrates With the LPCVD-Grown High-Breakdown-Field SiN_x Layer

IEEE Journal of the Electron Devices Society, 2023
This paper reports on an AlGaN/GaN high-electron-mobility transistor (HEMT) on free-standing AlN substrates with a record-high output power density of 24.4 W/mm at the X-band.
Junji Kotani, Junya Yaita, Kenji Homma, Shirou Ozaki, Atsushi Yamada, Masaru Sato, Toshihiro Ohki, Norikazu Nakamura   +7 more
doaj   +1 more source

Research progress of THz solid state amplifier

Dianzi Jishu Yingyong, 2019
With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin, Wang Weibo, Chen Zhongfei, Sun Hongzheng, Zhou Xibang, Tao Hongqi   +5 more
doaj   +1 more source

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Applied Sciences, 2018
In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure.
Hyeon-Tak Kwak, Seung-Bo Chang, Hyun-Jung Kim, Kyu-Won Jang, Hyung Sup Yoon, Sang-Heung Lee, Jong-Won Lim, Hyun-Seok Kim   +7 more
doaj   +1 more source

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

IEEE Journal of the Electron Devices Society, 2019
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation.
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton   +9 more
doaj   +1 more source