Results 31 to 40 of about 48,911 (290)

A sub-critical barrier thickness normally-off AlGaN/GaN MOS-HEMT [PDF]

, 2014
A new high-performance normally-off gallium nitride (GaN)-based metal-oxide-semiconductor high electron mobility transistor that employs an ultrathin subcritical 3 nm thick aluminium gallium nitride (Al0.25Ga0.75N) barrier layer and relies on an induced ...
Al-Khalidi, Abdullah, Brown, Raphael, Li, Xu, Macfarlane, Douglas, Ternent, Gary, Thayne, Iain, Wasige, Edward, Zhou, Haiping   +7 more
core   +1 more source

Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

Crystals, 2023
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection.
Yujian Zhang, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, Yang Wang, Wanjun Chen, Haiqiang Jia, Hong Chen   +13 more
doaj   +1 more source

High mobility n-channel organic field-effect transistors based on soluble C60 and C70 fullerene derivatives [PDF]

, 2008
We report on n-channel organic field-effect transistors (OFETs) based on the solution processable methanofullerenes [6,6]-phenyl-C61-butyric acid ester ([60]PCBM) and [6,6]-phenyl-C71-butyric acid methyl ester ([70]PCBM).
Anthopoulos, Thomas D., Bradley, Donal D. C., Coelle, Michael, Colle, Michael, de Leeuw, Dago M., H. Wobkenberg, Paul, Hummelen, Jan C., Kronholm, David, Woebkenberg, Paul H.   +8 more
core   +2 more sources

Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications [PDF]

, 2017
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5nm CMOS technology.
Adamu-Lema, F., Al-Ameri, Talib, Asenov, Asen, Georgiev, V.P.   +3 more
core   +1 more source

Planarized Trench Isolation of In_0.52Al_0.48As/In_0.8Ga_0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

IEEE Journal of the Electron Devices Society, 2021
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang   +4 more
doaj   +1 more source

AlGaN/GaN High Electron Mobility Transistor Amplifier for High-Temperature Operation

IEEE Journal of the Electron Devices Society
This paper presents a high gain voltage amplifier based on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with monolithically integrated enhancement-mode (E-mode) and depletion-mode (D-mode) devices.
Pingyu Cao, Kepeng Zhao, Harm Van Zalinge, Ping Zhang, Miao Cui, Fei Xue   +5 more
doaj   +1 more source

Investigation of Dynamic Threshold Voltage Behavior in Semi-Floating Gate Transistor for Normally-Off AlGaN/GaN HEMT

IEEE Journal of the Electron Devices Society, 2017
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage (Vth) during switching was observed. This dynamic Vth behavior of SFG device is because of the special device structure
Jun Wu, Lin-Qing Zhang, Yao Yao, Min-Zhi Lin, Zhi-Yuan Ye, Peng-Fei Wang   +5 more
doaj   +1 more source

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

Micromachines, 2022
We report on the fabrication and electrical characterization of AlGaN/GaN normally off transistors on silicon designed for high-voltage operation. The normally off configuration was achieved with a p-gallium nitride (p-GaN) cap layer below the gate ...
Idriss Abid, Youssef Hamdaoui, Jash Mehta, Joff Derluyn, Farid Medjdoub   +4 more
doaj   +1 more source

A cryogenic amplifier for fast real-time detection of single-electron tunneling

, 2007
We employ a cryogenic High Electron Mobility Transistor (HEMT) amplifier to increase the bandwidth of a charge detection setup with a quantum point contact (QPC) charge sensor. The HEMT is operating at 1K and the circuit has a bandwidth of 1 MHz.
Nooitgedagt, T., Schouten, R. N., Vandersypen, L. M. K., Vink, I. T., Wegscheider, W.   +4 more
core   +2 more sources

On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]

, 2019
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo, Grahn, Jan, Moschetti, Giuseppe, Niepce, David, Pourkabirian, Arsalan, Rodrigues, Isabel Harrysson, Schleeh, Joel   +6 more
core   +2 more sources