Results 31 to 40 of about 12,413 (305)

Mobility of a two-dimensional electron gas in the AlGaAs/GaAs heterostructure: simulation and analysis [PDF]

ITM Web of Conferences, 2019
At temperatures above 100 K, a two-dimensional electron gas generated at the AlGaAs/GaAs heterointerface can be characterized by the three dominant scattering mechanisms: acoustic deformation potential, polar acoustic phonon and polar optical phonon.
Volcheck Vladislav, Stempitsky Viktor
doaj   +1 more source

Intentionally Carbon-Doped AlGaN/GaN HEMTs:Necessity for Vertical Leakage Paths [PDF]

, 2014
Dynamic ON-resistance (RON) in heavily carbon doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region.
Šonský, Jan, Caesar, Markus, Croon, Jeroen, Kuball, Martin, Hurkx, Godefridus, Uren, Michael J, Silvestri, Marco   +6 more
core   +1 more source

Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor

AIP Advances, 2020
Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed
Ryota Ochi, Erika Maeda, Toshihide Nabatame, Koji Shiozaki, Taketomo Sato, Tamotsu Hashizume   +5 more
doaj   +1 more source

High-Sensitivity pH Sensor Based on Coplanar Gate AlGaN/GaN Metal-Oxide-Semiconductor High Electron Mobility Transistor

Chemosensors, 2021
The sensitivity of conventional ion-sensitive field-effect transistors is limited to the Nernst limit (59.14 mV/pH). In this study, we developed a pH sensor platform based on a coplanar gate AlGaN/GaN metal-oxide-semiconductor (MOS) high electron ...
Seong-Kun Cho, Won-Ju Cho
doaj   +1 more source

Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

Crystals, 2023
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection.
Yujian Zhang, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, Yang Wang, Wanjun Chen, Haiqiang Jia, Hong Chen   +13 more
doaj   +1 more source

Highly scalable distributed high electron mobility transistor model

, 2022
S.1490-1492This paper reports a scalable small-signal modeling approach for III-V high electron mobility transistors. The model utilizes a distributed six port description of the three transistor electrodes which improves the model validity up to very ...
Leuther, Arnulf, Schwantuschke, Dirk, Ambacher, Oliver, Heinz, Felix   +3 more
core   +1 more source

Analysis of Electron Mobility in Inversion-Mode Al2O3/InxGa1-xAs MOSFETs

, 2011
The electron mobility in Al2O3/InxGa1-xAs (x = 0.53, 0.65, or 0.75) metal-oxide-semiconductor field-effect transistors was analyzed for scattering by oxide charge, as well as interface charge and roughness, and compared with measured transfer ...
Xuan, Yi, Wang, Weike, Peide D. Ye, Hwang, James C. M., Weike Wang, Yi Xuan, Ye, Peide D., James C. M. Hwang   +7 more
core   +1 more source

Planarized Trench Isolation of In_0.52Al_0.48As/In_0.8Ga_0.2As Metamorphic High-Electron-Mobility Transistor by Liquid Phase Chemical Enhanced Oxidation

IEEE Journal of the Electron Devices Society, 2021
The liquid phase chemical enhanced oxidation (LPCEO) technique was applied to achieve planarized isolation of a high-indium-content In0.52Al0.48As/In0.8Ga0.2As metamorphic high-electron-mobility transistor (MHEMT).
Houng-Wei Chen, Tsung-Ying Lee, Jung-Sheng Huang, Kuan-Wei Lee, Yeong-Her Wang   +4 more
doaj   +1 more source

High mobility III-V MOSFETs for RF and digital applications [PDF]

, 2007
Developments over the last 15 years in the areas of materials and devices have finally delivered competitive III-V MOSFETs with high mobility channels. This paper briefly reviews the above developments, discusses properties of the GdGaO/Ga2O3 MOS systems,
Kalna, K., A. Zlotnicka, Moran, D.A.J., D. Macintyre, H. Zhou, O. Hartin, Asenov, A., Zlotnicka, A., Passlack, M., M. Tutt, X. Li, Y.-B. Park, K. Kalna, Droopad, R., Hartin, O., Fejes, P., J. Abrokwah, E. Johnson, Tutt, M., Abrokwah, J., S. Thoms, A. Asenov, Zurcher, P., Rajagopalan, K., Thoms, S., Park, Y-B, Macintyre, D., D.A.J. Moran, M. Passlack, K. Rajagopalan, Li, X., Thayne, I.G., Zhou, H., P. Fejes, P. Zurcher, I.G. Thayne, R. Droopad, Hill, R.J.W., R.J.W. Hill, Johnson, E.   +39 more
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

Advanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova, Anna Chiara Bressi, Marina Galliani, Attilio Marino, Gianni Ciofani, Eduardo Machado‐Charry, Hilda Gomez Bernal, Alessandra Francini, Luca Sebastiani, Francesco Greco   +9 more
wiley   +1 more source