Results 51 to 60 of about 7,654 (149)

Improvement of AlGaN/GaN High-Electron-Mobility Transistor Radio Frequency Performance Using Ohmic Etching Patterns for Ka-Band Applications. [PDF]

Micromachines (Basel), 2023
Lee MW, Chuang CW, Gamiz F, Chang EY, Lin YC.   +4 more
europepmc   +1 more source

Electron Transport Properties in High Electron Mobility Transistor Structures Improved by V-Pit Formation on the AlGaN/GaN Interface. [PDF]

ACS Appl Mater Interfaces, 2023
Hospodková A, Hájek F, Hubáček T, Gedeonová Z, Hubík P, Hývl M, Pangrác J, Dominec F, Košutová T.   +8 more
europepmc   +1 more source

Buffer Traps Effect on GaN-on-Si High-Electron-Mobility Transistor at Different Substrate Voltages. [PDF]

Micromachines (Basel), 2022
Lin Y, Kao ML, Weng YC, Dee CF, Chen SC, Kuo HC, Lin CH, Chang EY.   +7 more
europepmc   +1 more source

Two-Dimensional Perovskite-Gated AlGaN/GaN High-Electron-Mobility-Transistor for Neuromorphic Vision Sensor. [PDF]

Adv Sci (Weinh), 2022
Hong X, Huang Y, Tian Q, Zhang S, Liu C, Wang L, Zhang K, Sun J, Liao L, Zou X.   +9 more
europepmc   +1 more source

Atomically confined insertion for 2D strain and polarization engineered GaN electronics

Nature Communications
Gallium nitride semiconductors are essential for advanced electronics, but realizing their potential requires robust normally-off devices. The P-GaN gate high-electron-mobility transistor is the dominant architecture, yet its threshold voltage is ...
Yuanhong Shi, Zilong Dong, Jiangwen Wang, Di Guo, Wanpeng Li, Wei Sha, Zekun Li, Zhen Yang, Jizhou Zhang, Jitao Liu, Te Xu, Weiguo Hu, Zhong Lin Wang, Junyi Zhai   +13 more
doaj   +1 more source

GaAs Nanomembranes in the High Electron Mobility Transistor Technology. [PDF]

Materials (Basel), 2021
Gregušová D, Dobročka E, Eliáš P, Stoklas R, Blaho M, Pohorelec O, Haščík Š, Kučera M, Kúdela R.   +8 more
europepmc   +1 more source

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor. [PDF]

Micromachines (Basel), 2022
Liu CH, Huang CR, Wang HC, Kang YJ, Chiu HC, Kao HL, Chu KH, Kuo HC, Chen CT, Chang KJ.   +9 more
europepmc   +1 more source

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review. [PDF]

Micromachines (Basel), 2022
Haziq M, Falina S, Manaf AA, Kawarada H, Syamsul M.   +4 more
europepmc   +1 more source

Pd-Gated N-Polar GaN/AlGaN High-Electron-Mobility Transistor for High-Sensitivity Hydrogen Gas Detection

Crystals
Hydrogen gas sensing is critical for energy storage, industrial safety, and environmental monitoring. However, traditional sensors still face challenges in selectivity, sensitivity, and stability. This work introduces an innovative N-polar GaN/AlGaN high-
Long Ge, Haineng Bai, Yidi Teng, Xifeng Yang   +3 more
doaj   +1 more source

Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor. [PDF]

Materials (Basel), 2022
Esendag V, Feng P, Zhu C, Ni R, Bai J, Wang T.   +5 more
europepmc   +1 more source