Results 51 to 60 of about 12,413 (305)

Research progress of THz solid state amplifier

Dianzi Jishu Yingyong, 2019
With the development of semiconductor technology, characteristic frequency of transistors have been improving so far and into THz frequency range, which makes it possible for solid state devices to work in THz frequency range.
Guo Fangjin, Wang Weibo, Chen Zhongfei, Sun Hongzheng, Zhou Xibang, Tao Hongqi   +5 more
doaj   +1 more source

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Advances in Sustainable and Wearable Textile Based Soft Robotics

Advanced Functional Materials, EarlyView.
This Review examines advances in wearable textile‐based soft robotics, focusing on sustainable materials, integrated sensing, and scalable actuation. It discusses manufacturing and system integration across healthcare, assistive robotics, prosthetics, and human–machine interfaces, and highlights key challenges in circular design, including life‐cycle ...
Zahir Abbas, Marzia Dulal, Sophia K. Novoselov, Victoria K. Novoselov, Kostya S. Novoselov, Shaila Afroj, Nazmul Karim   +6 more
wiley   +1 more source

Operation Up to 500 °C of Al_0.85Ga_0.15N/Al_0.7Ga_0.3N High Electron Mobility Transistors

IEEE Journal of the Electron Devices Society, 2019
AlGaN channel high electron mobility transistors (HEMTs) are the potential next step after GaN channel HEMTs, as the high aluminum content channel leads to an ultra-wide bandgap, higher breakdown field, and improved high temperature operation.
Patrick H. Carey, Fan Ren, Albert G. Baca, Brianna A. Klein, Andrew A. Allerman, Andrew M. Armstrong, Erica A. Douglas, Robert J. Kaplar, Paul G. Kotula, Stephen J. Pearton   +9 more
doaj   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure

Applied Sciences, 2018
In this study, a high-performance AlGaN/GaN high electron mobility transistor (HEMT) is presented to improve its electrical operation by employing an inner field-plate (IFP) structure.
Hyeon-Tak Kwak, Seung-Bo Chang, Hyun-Jung Kim, Kyu-Won Jang, Hyung Sup Yoon, Sang-Heung Lee, Jong-Won Lim, Hyun-Seok Kim   +7 more
doaj   +1 more source

Transient Charging of Mixed Ionic‐Electronic Conductors by Anomalous Diffusion

Advanced Materials, EarlyView.
This article explores charge transport in mixed ionic‐electronic conductors (MIECs) through electrochemical impedance spectroscopy and transient current analysis. Focusing on PEDOT:PSS, WO3, and n‐doped PBDF, it uncovers the impact of anomalous diffusion via fractional modeling. The study reveals key correlations that deepen understanding and guide the
Heyi Zhang, Gonzalo Rivera‐Sierra, Shirin Siahjani‐Gultekin, Jenifer Rubio‐Magnieto, Anis Allagui, Ignacio Sanjuán, David Franco, Antonio Guerrero, Enrique H. Balaguera, Juan Bisquert   +9 more
wiley   +1 more source

Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

Advanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi, Mario Palacios‐Corella, Arjan Mol, Salvador Pané, Josep Puigmartí‐Luis   +4 more
wiley   +1 more source

Study of MoN gate impact on GaN high electron mobility transistor

Electronics Letters
In this letter, molybdenum nitride (MoN) gate AlGaN/GaN HEMT has been investigated with MoN developed in various physical vapour deposition (PVD) conditions.
Lixing Zhang, BeiBei Lv, Xu Ding, Faxin Yu, Jiongjiong Mo   +4 more
doaj   +1 more source

Numerical simulation of the sensor for toxic nanoparticles based on the heterostructure field effect transistor

Доклады Белорусского государственного университета информатики и радиоэлектроники, 2020
A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomaterials,
V. S. Volcheck, V. R. Stempitsky
doaj   +1 more source